公开(公告)号：US10017870B2

公开(公告)日：2018-07-10

申请号：US14667767

申请日：2015-03-25

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: C25D5/54 ,  C25D5/02 ,  B82Y30/00 ,  C25D5/10 ,  H01L23/373 ,  C25D7/12 ,  C25D5/14 ,  C25D5/50 ,  F28F21/02 ,  F28F21/08 ,  H01L21/48 ,  H01L23/00 ,  D06M10/06 ,  D06M11/83 ,  D06M101/40 ,  C25D5/18 ,  F28F3/02 ,  F28F21/00

CPC classification number: C25D5/022 ,  B82Y30/00 ,  C25D5/10 ,  C25D5/14 ,  C25D5/18 ,  C25D5/50 ,  C25D5/54 ,  C25D7/12 ,  D06M10/06 ,  D06M11/83 ,  D06M2101/40 ,  F28F3/02 ,  F28F21/00 ,  F28F21/02 ,  F28F21/085 ,  H01L21/4871 ,  H01L23/373 ,  H01L23/3733 ,  H01L24/83 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/13055

Abstract: A method for fabricating a heat sink including providing a carbon metal composite having a plurality of metal-coated carbon fibers and a plurality of openings, the openings leading from a first side of the carbon metal composite to a second side of the carbon metal composite, disposing the carbon metal composite over a semiconductor element such that the first side of the carbon metal composite faces the semiconductor element, and bonding the carbon metal composite to the semiconductor element by means of an electroplating process, wherein a metal electrolyte is supplied to an interface between the carbon metal composite and the semiconductor element via the plurality of openings.

公开(公告)号：US09926230B2

公开(公告)日：2018-03-27

申请号：US14879197

申请日：2015-10-09

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: C04B18/04 ,  C02F1/66 ,  C04B28/02

CPC classification number: C04B18/0481 ,  C02F1/5236 ,  C02F1/66 ,  C02F11/122 ,  C02F2101/105 ,  C02F2103/346 ,  C04B28/02 ,  Y02W30/91 ,  C04B20/023 ,  C04B18/0418

Abstract: A method of treating an acid effluent including phosphoric acid in accordance with various embodiments may include: providing an acid effluent including phosphoric acid; adding a base and silicon particles from a further effluent to the acid effluent including phosphoric acid so that a mixture is obtained and a solid content is formed; separating from the mixture a solid content including silicon and a salt resulting from a reaction of the base with the acid, so that a clarified effluent can be rejected in the environment and a filter press cake can be obtained and further used as additive for concrete.

公开(公告)号：US09828263B2

公开(公告)日：2017-11-28

申请号：US14470998

申请日：2014-08-28

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener ,  Zeljka Kroener

IPC: C02F1/52 ,  C02F101/10 ,  C02F103/34 ,  C02F1/72

CPC classification number: C02F1/5236 ,  C02F1/72 ,  C02F2101/10 ,  C02F2101/103 ,  C02F2103/346 ,  C02F2209/02 ,  C02F2305/02

Abstract: A method of removing particulate silicon from an effluent water in accordance with various embodiments may include: adding a base to the effluent water, an amount of the added base being sub-stoichiometric with regard to a basic oxidation reaction of an entire amount of silicon contained in the effluent water to ortho-silicic acid or ortho-silicate ions; maintaining a resulting mixture of the effluent water and the base in a predetermined temperature range for a period of time, so that a sediment including silicon is formed; and separating the sediment and the effluent water from each other.

公开(公告)号：US09733365B2

公开(公告)日：2017-08-15

申请号：US15279477

申请日：2016-09-29

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener ,  Johannes Hacker

IPC: G01T1/28 ,  G01T1/24

CPC classification number: G01T1/28 ,  G01T1/24

Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.

公开(公告)号：US20170084567A1

公开(公告)日：2017-03-23

申请号：US15363947

申请日：2016-11-29

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: H01L23/00 ,  B23K35/02 ,  B23K35/36 ,  B23K1/00

CPC classification number: H01L24/29 ,  B23K1/0016 ,  B23K35/007 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/32 ,  B23K35/36 ,  B23K2101/40 ,  B23K2103/172 ,  B32B15/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/05747 ,  H01L2224/05893 ,  H01L2224/06181 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27442 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29157 ,  H01L2224/29193 ,  H01L2224/29247 ,  H01L2224/29271 ,  H01L2224/29393 ,  H01L2224/29447 ,  H01L2224/29471 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2224/831 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/83693 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/00012

Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

公开(公告)号：US20160225626A1

公开(公告)日：2016-08-04

申请号：US15049192

申请日：2016-02-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Hans-Joachim Schulze ,  Ingo Muri ,  Friedrich Kroener ,  Werner Schustereder

IPC: H01L21/265 ,  H01L21/3063 ,  H01L21/324

CPC classification number: H01L21/26513 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/3063 ,  H01L21/3242

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

公开(公告)号：US20160053397A1

公开(公告)日：2016-02-25

申请号：US14467106

申请日：2014-08-25

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener ,  Ingo Muri

IPC: C25D5/02 ,  C25D5/18 ,  C25D17/00 ,  C25D5/34

CPC classification number: C25D15/00 ,  C25D3/12 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  C25D5/02 ,  C25D5/022 ,  C25D5/10 ,  C25D5/18 ,  C25D5/34 ,  C25D17/00 ,  C25D17/001 ,  C25D21/10

Abstract: A method of forming a composite material is provided. The method may include: arranging a suspension in physical contact with a carrier, wherein the suspension may comprise an electrolyte and a plurality of particles of a first component of the composite material; causing the particles of the first component of the composite material to sediment on the carrier, wherein a plurality of spaces may be formed between the sedimented particles; and forming by electroplating a second component of the composite material from the electrolyte in at least a fraction of the plurality of spaces.

Abstract translation: 提供了形成复合材料的方法。 该方法可以包括：将悬浮液布置成与载体物理接触，其中悬浮液可以包含电解质和复合材料的第一组分的多个颗粒; 导致复合材料的第一组分的颗粒沉积在载体上，其中可以在沉积的颗粒之间形成多个空间; 以及通过在所述多个空间的至少一部分中从所述电解质中电镀所述复合材料的第二组分而形成。

公开(公告)号：US09627209B2

公开(公告)日：2017-04-18

申请号：US15049192

申请日：2016-02-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Hans-Joachim Schulze ,  Ingo Muri ,  Friedrich Kroener ,  Werner Schustereder

IPC: H01L21/322 ,  H01L29/868 ,  H01L21/265 ,  H01L21/263 ,  H01L21/324 ,  H01L21/3063

CPC classification number: H01L21/26513 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/3063 ,  H01L21/3242

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

公开(公告)号：US20170101341A1

公开(公告)日：2017-04-13

申请号：US14879197

申请日：2015-10-09

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: C04B18/04

CPC classification number: C04B18/0481 ,  C02F1/5236 ,  C02F1/66 ,  C02F11/122 ,  C02F2101/105 ,  C02F2103/346 ,  C04B28/02 ,  Y02W30/91 ,  C04B20/023 ,  C04B18/0418

Abstract: A method of treating an acid effluent including phosphoric acid in accordance with various embodiments may include: providing an acid effluent including phosphoric acid; adding a base and silicon particles from a further effluent to the acid effluent including phosphoric acid so that a mixture is obtained and a solid content is formed; separating from the mixture a solid content including silicon and a salt resulting from a reaction of the base with the acid, so that a clarified effluent can be rejected in the environment and a filter press cake can be obtained and further used as additive for concrete.

公开(公告)号：US20160343998A1

公开(公告)日：2016-11-24

申请号：US15160352

申请日：2016-05-20

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: H01M2/02 ,  H01M2/10 ,  H01M10/058 ,  H01M10/0525

CPC classification number: H01M2/0267 ,  H01M2/0285 ,  H01M2/1016 ,  H01M4/134 ,  H01M4/382 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/058

Abstract: A battery includes a plurality of battery cells encapsulated by an encapsulation structure. The battery also includes an embedding structure separating neighboring ones of the battery cells. An embedding material of at least a part of the embedding structure is arranged between the neighboring battery cells. A shear strength of the embedding material is less than 30% of a shear strength of an encapsulation material of at least a part of the encapsulation structure.

Abstract translation: 电池包括由封装结构封装的多个电池单元。 电池还包括分离相邻的电池单元的嵌入结构。 嵌入结构的至少一部分的嵌入材料布置在相邻的电池单元之间。 嵌入材料的剪切强度小于封装结构的至少一部分的封装材料的剪切强度的30％。