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    Method to create air gaps
    16.
    发明授权
    Method to create air gaps 有权

    公开(公告)号：US11637037B2

    公开(公告)日：2023-04-25

    申请号：US16825473

    申请日：2020-03-20

    Applicant: Lam Research Corporation

    Inventor： Patrick van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

    IPC: H01L21/768 ,  H01L29/417 ,  H01L29/66 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78

    Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an Hz-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% Hz. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

    ATOMIC LAYER ETCHING OF MOLYBDENUM
    19.
    发明申请
    ATOMIC LAYER ETCHING OF MOLYBDENUM 有权

    公开(公告)号：US20230093011A1

    公开(公告)日：2023-03-23

    申请号：US17905104

    申请日：2021-03-02

    Applicant: Lam Research Corporation

    Inventor： Andreas Fischer ,  Aaron Lynn Routzahn ,  Thorsten Bernd Lill ,  Seshasayee Varadarajan

    IPC: H01L21/3213 ,  H01L21/67 ,  H01J37/32 ,  C23F1/02

    Abstract: Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.

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