公开(公告)号：US20180005909A1

公开(公告)日：2018-01-04

申请号：US15702225

申请日：2017-09-12

Applicant: Micron Technology, Inc.

Inventor： David J. Corisis ,  Chin Hui Chong ,  Choon Kuan Lee

IPC: H01L23/053 ,  H01L21/56 ,  H01L25/07 ,  H01L25/065 ,  H01L25/10 ,  H01L23/538 ,  H01L23/498 ,  H01L23/31 ,  H01L21/66 ,  H01L25/11 ,  H01L23/00

CPC classification number: H01L23/053 ,  H01L21/56 ,  H01L21/561 ,  H01L22/10 ,  H01L23/3128 ,  H01L23/3178 ,  H01L23/49805 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/4911 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2225/06503 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1064 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1627 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: Microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a packaged microelectronic device can include an interposer substrate with a plurality of interposer contacts. A microelectronic die is attached and electrically coupled to the interposer substrate. The device further includes a casing covering the die and at least a portion of the interposer substrate. A plurality of electrically conductive through-casing interconnects are in contact with and projecting from corresponding interposer contacts at a first side of the interposer substrate. The through-casing interconnects extend through the thickness of the casing to a terminus at the top of the casing. The through-casing interconnects comprise a plurality of filaments attached to and projecting away from the interposer contacts in a direction generally normal to the first side of the interposer substrate.

公开(公告)号：US09271403B2

公开(公告)日：2016-02-23

申请号：US14165855

申请日：2014-01-28

Applicant: Micron Technology, Inc.

Inventor： Chin Hui Chong ,  Hong Wan Ng

IPC: H05K3/30 ,  H01L23/13 ,  H01L23/498 ,  H05K3/10 ,  H05K3/34 ,  H01L23/31 ,  H01L23/00

CPC classification number: H05K3/303 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/04042 ,  H01L2224/06156 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H05K3/10 ,  H05K3/34 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Various embodiments of semiconductor assemblies with multi-level substrates and associated methods of manufacturing are described below. In one embodiment, a substrate for carrying a semiconductor die includes a first routing level, a second routing level, and a conductive via between the first and second routing levels. The conductive via has a first end proximate the first routing level and a second end proximate the second routing level. The first routing level includes a terminal and a first trace between the terminal and the first end of the conductive via. The second routing level includes a second trace between the second end of the conductive via and a ball site. The terminal of the first routing level and the ball site of the second routing level are both accessible for electrical connections from the same side of the substrate.

Abstract translation: 下面描述具有多层基板的半导体组件和相关制造方法的各种实施例。 在一个实施例中，用于承载半导体管芯的衬底包括第一路由级别，第二路由级别以及第一和第二路由级别之间的导电通路。 导电通孔具有接近第一路由级的第一端和靠近第二路由级的第二端。 第一路由级别包括端子和导体通孔的端子与第一端之间的第一迹线。 第二路由级别包括导电通孔的第二端和球场之间的第二迹线。 第一路由级别的终端和第二路由级别的球点都可以从基板的同一侧进行电连接。

公开(公告)号：US20130292853A1

公开(公告)日：2013-11-07

申请号：US13933607

申请日：2013-07-02

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Dalson Ye ,  Chin Hui Chong ,  Choon Kuan Lee ,  Wang Lai Lee ,  Roslan Bin Said

IPC: H01L25/00

CPC classification number: H01L23/3128 ,  H01L21/561 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/00 ,  H01L25/105 ,  H01L25/117 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/16055 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.

公开(公告)号：US20130256853A1

公开(公告)日：2013-10-03

申请号：US13898782

申请日：2013-05-21

Applicant: MICRON TECHNOLOGY, INC.

Inventor： David J. Corisis ,  Chin Hui Chong ,  Choon Kuan Lee

IPC: H01L23/495

CPC classification number: H01L25/105 ,  H01L23/13 ,  H01L23/24 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A device is disclosed which includes a first packaged integrated circuit device, a second packaged integrated circuit device positioned above the first packaged integrated circuit device and a plurality of planar conductive members conductively coupling the first and second packaged integrated circuit devices to one another. A method is also disclosed which includes conductively coupling a plurality of extensions on a leadframe to each of a pair of stacked packaged integrated circuit devices and cutting the leadframe to singulate the extensions from one another.

公开(公告)号：US12237301B2

公开(公告)日：2025-02-25

申请号：US17750225

申请日：2022-05-20

Applicant: Micron Technology, Inc.

Inventor： Chin Hui Chong ,  Seng Kim Ye ,  Kelvin Tan Aik Boo ,  Hong Wan Ng

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor package including a package substrate with an upper surface, a controller, and a die stack. The controller and the die stack are at the upper surface. The die stack includes a shingled sub-stack of semiconductor dies, a reverse-shingled sub-stack of semiconductor dies, and a bridging chip. The bridging chip is bonded between the shingled sub-stack and the reverse-shingled sub-stack, and has an internal trace. A first wire segment is bonded between the controller and a first end of the bridging chip, and a second wire segment is bonded between a second end of the bridging chip and each semiconductor die of the shingled sub-stack. The internal trace electrically couples the first and second wire segments. Additionally, a third wire segment is bonded between the controller and each semiconductor die of the reverse-shingled sub-stack.

公开(公告)号：US20240072024A1

公开(公告)日：2024-02-29

申请号：US17897156

申请日：2022-08-27

Applicant: Micron Technology, Inc.

Inventor： Kelvin Tan Aik Boo ,  Hong Wan Ng ,  Seng Kim Ye ,  Chin Hui Chong

IPC: H01L25/16 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13 ,  H01L23/498

CPC classification number: H01L25/162 ,  H01L21/4853 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1438 ,  H01L2924/182 ,  H01L2924/19041 ,  H01L2924/35121

Abstract: Modular systems in packages, and associated devices, systems, and methods, are disclosed herein. In one embodiment, a system comprises a main module package and an upper module package. The main module package includes a first substrate and a first electronic device mounted on a first side of the first substrate. The upper module package includes a second substrate and one or more second electronic devices mounted on a first side of the second substrate. The second substrate includes a cavity at a second side of the second substrate opposite the first side, and the upper module package is mountable on the first side of the first substrate of the main module package such that the first electronic device is positioned within the cavity and the second substrate generally surrounds at least a portion of a perimeter of the first electronic device.

公开(公告)号：US20240047423A1

公开(公告)日：2024-02-08

申请号：US17879660

申请日：2022-08-02

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Ye ,  Kelvin Tan Aik Boo ,  Hong Wan Ng ,  Chin Hui Chong

IPC: H01L25/065 ,  H01L21/304

CPC classification number: H01L25/0657 ,  H01L21/3043 ,  H01L2924/1436 ,  H01L2924/1438 ,  H01L2924/1431 ,  H01L2924/10158 ,  H01L24/48

Abstract: A semiconductor device assembly is provided. The assembly includes an outer semiconductor device which has an active surface and a back surface. The back surface includes a cut that extends to a depth between the active surface and the back surface, and uncut regions on opposing sides of the cut. The assembly further includes an inner semiconductor device disposed within the cut of the outer semiconductor device.

公开(公告)号：US20230378043A1

公开(公告)日：2023-11-23

申请号：US17750140

申请日：2022-05-20

Applicant: Micron Technology, Inc.

Inventor： Chin Hui Chong ,  Seng Kim Ye ,  Kelvin Tan Aik Boo ,  Hong Wan Ng

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49838 ,  H01L21/4846

Abstract: Semiconductor devices with three-dimensional trace matching features, and related systems and methods, are disclosed herein. In some embodiments, an exemplary semiconductor device includes at least one semiconductor die and a redistribution layer disposed over the at least one semiconductor die and extending across a longitudinal plane. The redistribution layer includes first and second traces each electrically coupled to the at least one semiconductor die. The first trace is disposed in a first travel path included in a first effective path length. The second trace is disposed in a second travel path different from the first travel path. The second the second travel path includes at least one segment at a non-right, non-zero angle such that the at least one segment is neither parallel nor perpendicular to the longitudinal plane. Further, the second travel path is included in a second effective path length equal to the first path length.

公开(公告)号：US11723150B2

公开(公告)日：2023-08-08

申请号：US17012817

申请日：2020-09-04

Applicant: Micron Technology, Inc.

Inventor： Kelvin Tan Aik Boo ,  Chin Hui Chong ,  Seng Kim Ye ,  Hong Wan Ng ,  Hem P. Takiar

IPC: H05K1/18 ,  H01L25/065 ,  H01L23/13 ,  H01L23/498 ,  H01L23/64

CPC classification number: H05K1/183 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/642 ,  H01L25/0657 ,  H05K1/181 ,  H01L23/49816 ,  H05K2201/10015 ,  H05K2201/10159

Abstract: An apparatus includes a primary layer of a substrate that includes an open area that extends through the primary layer to an inner layer of the substrate. The apparatus includes a secondary layer of the substrate. The apparatus also includes the inner layer of the substrate that is positioned between the primary layer and the secondary layer. The inner layer includes component bond pads that are disposed on the inner layer and that are exposed via the open area of the primary layer.

公开(公告)号：US11527459B2

公开(公告)日：2022-12-13

申请号：US17243466

申请日：2021-04-28

Applicant: Micron Technology, Inc.

Inventor： Hong Wan Ng ,  Chin Hui Chong ,  Hem P. Takiar ,  Seng Kim Ye ,  Kelvin Tan Aik Boo

IPC: H01L29/76 ,  H01L29/00 ,  H01L23/48 ,  H01L27/08 ,  H01L49/02 ,  H01L23/498

Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second pair of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to first and second distances between electrical contacts of the first and second surface-mount capacitors.