公开(公告)号：US07064060B2

公开(公告)日：2006-06-20

申请号：US11010344

申请日：2004-12-14

申请人： Kaori Misawa ,  Naofumi Ohashi

发明人： Kaori Misawa ,  Naofumi Ohashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/02063 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76841 ,  H01L2221/1047

摘要： A heat treatment is performed to an insulating film composition, formed on a semiconductor substrate, at a temperature of 350° C. in an inert gas ambient to form a non-porous insulating film. Next, dry etching is performed using a resist pattern as a mask to form a trench in the non-porous insulating film, ashing is performed to remove the resist pattern, and the surface of the semiconductor substrate is cleaned. Thereafter, a second heat treatment is performed for the non-porous insulating film to form a porous insulating film. Since the second heat treatment is performed in an oxidizing-gas atmosphere, the pore-generating material can be removed at a temperature lower than the temperature of conventional methods to form an insulating film having a low dielectric constant.

摘要翻译： 对形成在半导体基板上的绝缘膜组合物在惰性气体环境中在350℃的温度下进行热处理，以形成无孔绝缘膜。 接下来，使用抗蚀剂图案作为掩模进行干蚀刻，以在无孔绝缘膜中形成沟槽，进行灰化以除去抗蚀剂图案，并且清洁半导体衬底的表面。 此后，对无孔绝缘膜进行第二次热处理以形成多孔绝缘膜。 由于在氧化气体气氛中进行第二热处理，所以可以在低于常规方法的温度的温度下除去孔产生材料，以形成具有低介电常数的绝缘膜。

公开(公告)号：US20050064699A1

公开(公告)日：2005-03-24

申请号：US10940820

申请日：2004-09-15

申请人： Seiichi Kondo ,  Kaori Misawa ,  Shunichi Tokitoh ,  Takashi Nasuno

发明人： Seiichi Kondo ,  Kaori Misawa ,  Shunichi Tokitoh ,  Takashi Nasuno

IPC分类号： H01L27/00 ,  H01L21/28 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3124 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/318 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835

摘要： A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.

摘要翻译： 第一CVD绝缘层沉积在半导体衬底的表面上。 接下来，在至少两个不同的步骤中沉积低k层，以在第一CVD电介质层上形成通孔层电介质膜和布线层电介质膜之一。 沉积后立即进行热处理。 在低k层上沉积第二CVD介电层。 在第二CVD介质层和低k层中形成凹槽。 在该结构上沉积金属层，填充凹槽。 金属层通过化学机械抛光从第二CVD介电层去除。

公开(公告)号：US06177343B1

公开(公告)日：2001-01-23

申请号：US09429698

申请日：1999-10-28

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L214763

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US06998325B2

公开(公告)日：2006-02-14

申请号：US10980279

申请日：2004-11-04

申请人： Takashi Yunogami ,  Kaori Misawa

发明人： Takashi Yunogami ,  Kaori Misawa

IPC分类号： H01L21/76

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76828 ,  H01L2221/1047

摘要： An insulating-film composition containing an insulating-film precursor and a pore-generating material is applied onto a surface of a semiconductor substrate, and a first heat treatment is performed to polymerize the insulating-film precursor without vaporizing the pore-generating material, to form a non-porous insulating film. Next, a resist pattern is formed on the non-porous insulating film, and dry etching is performed, using the resist pattern as a mask, to form a trench in the non-porous insulating film. After removing the resist pattern by ashing, the surface of the semiconductor substrate is cleaned. Next, a second heat treatment is performed to remove the pore-generating material from the non-porous insulating film and to form a porous insulating film. Thereafter, a copper layer is deposited in the trench on a barrier-metal film to form copper wiring.

摘要翻译： 将包含绝缘膜前体和孔产生材料的绝缘膜组合物施加到半导体衬底的表面上，并且进行第一热处理以使绝缘膜前体聚合而不使气孔产生材料蒸发， 形成无孔绝缘膜。 接下来，在无孔绝缘膜上形成抗蚀剂图案，并使用抗蚀剂图案作为掩模进行干法蚀刻，以在无孔绝缘膜中形成沟槽。 通过灰化除去抗蚀剂图案后，清洁半导体衬底的表面。 接下来，进行第二热处理以从无孔绝缘膜去除发孔材料并形成多孔绝缘膜。 此后，在阻挡金属膜上的沟槽中沉积铜层以形成铜布线。

公开(公告)号：US07125794B2

公开(公告)日：2006-10-24

申请号：US10940820

申请日：2004-09-15

申请人： Seiichi Kondo ,  Kaori Misawa ,  Shunichi Tokitoh ,  Takashi Nasuno

发明人： Seiichi Kondo ,  Kaori Misawa ,  Shunichi Tokitoh ,  Takashi Nasuno

IPC分类号： H01L21/4763 ,  H01L21/312 ,  H01L21/469

CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3124 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/318 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835

摘要： A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.

摘要翻译： 第一CVD绝缘层沉积在半导体衬底的表面上。 接下来，在至少两个不同的步骤中沉积低k层，以在第一CVD电介质层上形成通孔层电介质膜和布线层电介质膜之一。 沉积后立即进行热处理。 在低k层上沉积第二CVD介电层。 在第二CVD介质层和低k层中形成凹槽。 在该结构上沉积金属层，填充凹槽。 金属层通过化学机械抛光从第二CVD介电层去除。

公开(公告)号：US20050199586A1

公开(公告)日：2005-09-15

申请号：US11052911

申请日：2005-02-09

申请人： Atsushi Matsushita ,  Isao Matsumoto ,  Kazuaki Inukai ,  Hong Shin ,  Naofumi Ohashi ,  Shuji Sone ,  Kaori Misawa

发明人： Atsushi Matsushita ,  Isao Matsumoto ,  Kazuaki Inukai ,  Hong Shin ,  Naofumi Ohashi ,  Shuji Sone ,  Kaori Misawa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32477 ,  H01J2237/3342

摘要： In resist removal using hydrogen gas, the specific dielectric constant of an insulating film of a low dielectric constant can be reduced and the resist removal speed can be increased. A wafer is loaded on a rotary table in a chamber, and hydrogen mixed gas is introduced into a discharge tube from a gas introduction port, and a μ wave is supplied into the discharge tube via a waveguide, and the mixed gas is excited by plasma, and a hydrogen active species is generated. And, a neutral radical (hydrogen radical) of hydrogen atoms or hydrogen molecules is introduced into the chamber from a gas transport pipe and a resist mask on the surface of the wafer is removed. Here, by a substrate heating system for heating the rotary table and controlling the temperature, the temperature of the wafer is set within the range from 200° C. to 400° C. The processed gas after resist removal is ejected from the chamber through a gas ejection port by an exhaust system.

摘要翻译： 在使用氢气的抗蚀剂去除中，可以降低介电常数低的绝缘膜的比介电常数，并且可以提高抗蚀剂去除速度。 将晶片装载在室内的旋转台上，将氢气混合气体从气体导入口引入放电管，经由波导将mu波供给到放电管内，混合气体被等离子体激发 ，生成氢活性物质。 并且，从气体输送管将氢原子或氢分子的中性自由基（氢基团）引入到室中，并且去除晶片表面上的抗蚀剂掩模。 这里，通过用于加热旋转台并控制温度的基板加热系统，将晶片的温度设定在200℃至400℃的范围内。抗蚀剂除去后的处理气体通过一个 气体排出口由排气系统。

公开(公告)号：US06326318B1

公开(公告)日：2001-12-04

申请号：US09521865

申请日：2000-03-08

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的有机绝缘膜。 有机绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成有机绝缘膜的步骤。 具有动能的杂质被引入到有机绝缘膜中。 接下来，在有机绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在有机绝缘膜上形成上导电层，以电连接到插头。

公开(公告)号：US06268657B1

公开(公告)日：2001-07-31

申请号：US08877931

申请日：1997-06-18

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L21321

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US20070279661A1

公开(公告)日：2007-12-06

申请号：US11754594

申请日：2007-05-29

申请人： Kaori Misawa

发明人： Kaori Misawa

IPC分类号： H04N1/60 ,  G06F15/00

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14689

摘要： This image sensor comprises a plurality of pixel electrodes, a photoelectric conversion film arranged on the plurality of pixel electrodes, a dummy electrode formed on an end of the photoelectric conversion film for ejecting charges generated in the vicinity of the end of the photoelectric conversion film and a first transistor for controlling ejection of charges flowing into the dummy electrode.

摘要翻译： 该图像传感器包括多个像素电极，设置在多个像素电极上的光电转换膜，形成在光电转换膜的端部上的虚拟电极，用于喷射在光电转换膜的端部附近产生的电荷， 用于控制流入虚拟电极的电荷的喷射的第一晶体管。

公开(公告)号：US20050208756A1

公开(公告)日：2005-09-22

申请号：US11052987

申请日：2005-02-09

申请人： Atsushi Matsushita ,  Isao Matsumoto ,  Kazuaki Inukai ,  Hong Shin ,  Naofumi Ohashi ,  Shuji Sone ,  Kaori Misawa

发明人： Atsushi Matsushita ,  Isao Matsumoto ,  Kazuaki Inukai ,  Hong Shin ,  Naofumi Ohashi ,  Shuji Sone ,  Kaori Misawa

IPC分类号： H01L21/3065 ,  G03F7/42 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： G03F7/427 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681

摘要： Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NH3 gas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.

摘要翻译： 公开了一种去除抗蚀剂的方法，该方法防止低介电常数绝缘膜的介电常数增加并防止抗蚀剂残留。 使用抗蚀剂掩模，保护绝缘膜，MSQ膜和构成ILD的氧化硅膜，依次进行RIE干式蚀刻，并且在用于处理的基板的表面上形成通孔以到达用于处理的基板上的扩散层 。 随后的过程包括 由于通过等离子体激发NH 3气体的等离子体气体的先前蚀刻，除去形成在用于处理表面的基板上的改性层，以及通过产生氢活性物质的照射完全除去抗蚀剂掩模的另一蚀刻 通过氢气和惰性气体，例如氦气或氩气。