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公开(公告)号:US20120043668A1
公开(公告)日:2012-02-23
申请号:US12860156
申请日:2010-08-20
IPC分类号: H01L23/538 , H01L21/50
CPC分类号: H01L23/04 , H01L21/563 , H01L23/10 , H01L23/367 , H01L23/42 , H01L23/49827 , H01L25/0652 , H01L25/0657 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06575 , H01L2225/06589 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括将插入件放置在第一半导体芯片上。 插入器包括安置在第一半导体芯片上的第一表面和适于热接触散热器的第二表面。 第二表面包括第一孔。 第二半导体芯片放置在第一孔中。
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公开(公告)号:US08617926B2
公开(公告)日:2013-12-31
申请号:US12878795
申请日:2010-09-09
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L21/00
CPC分类号: H01L23/24 , H01L21/563 , H01L23/147 , H01L23/293 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/3675 , H01L23/49575 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L24/16 , H01L25/0657 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16251 , H01L2924/166 , H01L2924/167 , H01L2924/00
摘要: A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
摘要翻译: 提供一种制造方法,其包括为半导体芯片提供绝缘层。 绝缘层包括沟槽。 第二半导体芯片堆叠在第一半导体芯片上以留下间隙。 将聚合物填料放置在间隙中,其中一部分聚合物填料被拉入沟槽。
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公开(公告)号:US08472190B2
公开(公告)日:2013-06-25
申请号:US12889590
申请日:2010-09-24
申请人: Gamal Refai-Ahmed , Bryan Black , Michael Z. Su
发明人: Gamal Refai-Ahmed , Bryan Black , Michael Z. Su
IPC分类号: H05H7/20
CPC分类号: H01L25/0657 , H01L23/13 , H01L23/42 , H01L23/49816 , H01L23/49827 , H01L25/0652 , H01L2023/4062 , H01L2224/1403 , H01L2224/141 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32245 , H01L2224/73253 , H01L2224/81192 , H01L2224/83192 , H01L2224/92225 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/01322 , H01L2924/15151 , H01L2924/15311 , H01L2924/15321 , H05K1/0204 , H05K1/141 , H05K1/181 , H05K2201/09072 , H05K2201/10378 , H05K2201/10416 , H05K2201/10515 , H05K2201/1056
摘要: A method of manufacturing is provided that includes placing a thermal management device in thermal contact with a first semiconductor chip of a semiconductor chip device. The semiconductor chip device includes a first substrate coupled to the first semiconductor chip. The first substrate has a first aperture. At least one of the first semiconductor chip and the thermal management device is at least partially positioned in the first aperture.
摘要翻译: 提供了一种制造方法,其包括将热管理装置放置成与半导体芯片装置的第一半导体芯片热接触。 半导体芯片器件包括耦合到第一半导体芯片的第一衬底。 第一基板具有第一孔。 第一半导体芯片和热管理装置中的至少一个至少部分地位于第一孔中。
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公开(公告)号:US08193039B2
公开(公告)日:2012-06-05
申请号:US12889615
申请日:2010-09-24
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L21/00
CPC分类号: H01L23/585 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/49816 , H01L23/60 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/351 , H01L2224/81 , H01L2924/00
摘要: A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
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15.
公开(公告)号:US20120098119A1
公开(公告)日:2012-04-26
申请号:US12910379
申请日:2010-10-22
申请人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
发明人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
IPC分类号: H01L23/373 , H01L25/11 , H01L21/54
CPC分类号: H01L23/22 , H01L21/54 , H01L23/42 , H01L23/473 , H01L25/115 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/00
摘要: A method of manufacturing is provided that includes providing a semiconductor chip device that has a circuit board and a first semiconductor chip coupled thereto. A lid is placed on the circuit board. The lid includes an opening and an internal cavity. A liquid thermal interface material is placed in the internal cavity for thermal contact with the first semiconductor chip and the circuit board.
摘要翻译: 提供了一种制造方法,其包括提供具有电路板和与其耦合的第一半导体芯片的半导体芯片器件。 盖子放在电路板上。 盖子包括开口和内部空腔。 液体热界面材料放置在内腔中,用于与第一半导体芯片和电路板热接触。
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公开(公告)号:US09627281B2
公开(公告)日:2017-04-18
申请号:US12860256
申请日:2010-08-20
申请人: Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
发明人: Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
IPC分类号: H01L23/58 , H01L21/66 , H01L21/56 , H01L21/683 , H01L25/065 , H01L23/42
CPC分类号: H01L22/20 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L22/14 , H01L23/42 , H01L25/0657 , H01L2221/68327 , H01L2221/68386 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81002 , H01L2224/81815 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/01019 , H01L2924/01079 , H01L2924/014 , H01L2924/00
摘要: A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.
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17.
公开(公告)号:US08796842B2
公开(公告)日:2014-08-05
申请号:US12860244
申请日:2010-08-20
申请人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
发明人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
IPC分类号: H01L23/34
CPC分类号: H01L23/49827 , H01L23/04 , H01L23/13 , H01L23/3675 , H01L25/0657 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73253 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/00014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15321 , H01L2924/00 , H01L2224/0401
摘要: A method of assembling a semiconductor chip device is provided that includes providing a circuit board including a surface with an aperture. A portion of a first heat spreader is positioned in the aperture. A stack is positioned on the first heat spreader. The stack includes a first semiconductor chip positioned on the first heat spreader and a substrate that has a first side coupled to the first semiconductor chip.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括提供包括具有孔径的表面的电路板。 第一散热器的一部分位于孔中。 堆叠位于第一散热器上。 堆叠包括位于第一散热器上的第一半导体芯片和具有耦合到第一半导体芯片的第一侧的衬底。
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公开(公告)号:US20140103506A1
公开(公告)日:2014-04-17
申请号:US14132557
申请日:2013-12-18
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L23/24 , H01L23/495
CPC分类号: H01L23/24 , H01L21/563 , H01L23/147 , H01L23/293 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/3675 , H01L23/49575 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L24/16 , H01L25/0657 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16251 , H01L2924/166 , H01L2924/167 , H01L2924/00
摘要: A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
摘要翻译: 提供一种制造方法,其包括为半导体芯片提供绝缘层。 绝缘层包括沟槽。 第二半导体芯片堆叠在第一半导体芯片上以留下间隙。 将聚合物填料放置在间隙中,其中一部分聚合物填料被拉入沟槽。
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公开(公告)号:US08338961B2
公开(公告)日:2012-12-25
申请号:US13456968
申请日:2012-04-26
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L23/34
CPC分类号: H01L23/585 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/49816 , H01L23/60 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/351 , H01L2224/81 , H01L2924/00
摘要: A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
摘要翻译: 一种制造方法包括将第一穿通硅通孔的第一端连接到靠近第一半导体芯片的第一侧的第一管芯密封件。 第一硅硅通孔的第二端连接到靠近第一半导体芯片的与第一侧相对的第二侧的第二管芯密封件。
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公开(公告)号:US20160365335A1
公开(公告)日:2016-12-15
申请号:US15247259
申请日:2016-08-25
申请人: Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人: Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号: H01L25/065 , H01L23/00
CPC分类号: H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译: 公开了一种具有导电孔的半导体芯片及其制造方法。 该方法包括在第一半导体芯片的层中形成第一多个导电通孔。 第一多个导电通孔包括第一端和第二端。 第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。
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