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公开(公告)号：US07687876B2
公开(公告)日：2010-03-30
申请号：US11412060
申请日：2006-04-25
IPC分类号： H01L27/095
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
摘要翻译： 本发明提供在导电基材上生长的纳米结构及其制备方法。 根据要求保护的方法生长的纳米结构适用于制造诸如电子束写入器和场发射显示器的电子器件。
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12.发明申请Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing 有权沉积和选择性去除纳米结构加工的导电助手公开(公告)号：US20090233124A1
公开(公告)日：2009-09-17
申请号：US12392017
申请日：2009-02-24
申请人： Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
发明人： Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
CPC分类号： C23C16/26 , B82Y10/00 , B82Y40/00 , C01B32/15 , C23C16/503 , G02B6/26 , H01B13/0026 , H01L21/0237 , H01L21/02491 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/4871 , H01L21/76802 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/3677 , H01L23/3737 , H01L23/49827 , H01L23/5226 , H01L23/53276 , H01L29/0665 , H01L29/66439 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
摘要翻译： 公开了一种制造一种或多种纳米结构的方法，所述方法包括：在衬底的上表面上沉积导电层; 在导电层上沉积图案化的催化剂层; 在催化剂层上生长一个或多个纳米结构; 并且选择性地去除所述一个或多个纳米结构之间和周围的导电层。 还公开了一种包括衬底的器件，其中衬底包括由一个或多个绝缘区域隔开的一个或多个暴露的金属岛; 设置在所述基板上的导电助垫，其覆盖所述一个或多个暴露的金属岛或绝缘区域中的至少一些; 设置在导电助听器上的催化剂层; 以及设置在催化剂层上的一个或多个纳米结构。
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公开(公告)号：US20090108251A1
公开(公告)日：2009-04-30
申请号：US11412060
申请日：2006-04-25
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
摘要翻译： 本发明提供在导电基材上生长的纳米结构及其制备方法。 根据要求保护的方法生长的纳米结构适用于制造诸如电子束写入器和场发射显示器的电子器件。
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公开(公告)号：US09206532B2
公开(公告)日：2015-12-08
申请号：US13879617
申请日：2010-10-18
IPC分类号： C01B31/02 , D01F9/127 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/06 , H01L29/16 , H01L29/41 , H01L29/775 , B05D3/10 , C23C16/44 , H01L29/20
CPC分类号： D01F9/127 , B05D3/107 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01B32/162 , C01B32/18 , C23C16/44 , H01L29/0676 , H01L29/1606 , H01L29/2003 , H01L29/413 , H01L29/775 , Y10T428/12396
摘要： A method for manufacturing a plurality of nanostructures (101) on a substrate (102). The method comprises the steps of: depositing a bottom layer (103) on an upper surface of the substrate (102), the bottom layer (103) comprising grains having a first average grain size; depositing a catalyst layer (104) on an upper surface of the bottom layer (103), the catalyst layer (104) comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer (103) and the catalyst layer (104); heating the stack of layers to a temperature where nanostructures (101) can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer (104).
摘要翻译： 一种用于在基板（102）上制造多个纳米结构（101）的方法。 该方法包括以下步骤：在衬底（102）的上表面上沉积底层（103），底层（103）包含具有第一平均晶粒尺寸的晶粒; 在底层（103）的上表面上沉积催化剂层（104），所述催化剂层（104）包含具有与第一平均晶粒尺寸不同的第二平均晶粒尺寸的晶粒，从而形成包括底层 层（103）和催化剂层（104）; 将层叠层加热到纳米结构（101）可以形成的温度; 以及提供包含反应物的气体，使得反应物与催化剂层（104）接触。
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公开(公告)号：US08815332B2
公开(公告)日：2014-08-26
申请号：US13570634
申请日：2012-08-09
CPC分类号： B32B37/12 , B32B37/06 , B32B37/10 , B32B37/16 , B32B38/0008 , B32B2037/1253 , B32B2307/202 , B32B2307/302 , B32B2307/706 , B32B2309/02 , B32B2309/12 , B32B2310/0831 , B32B2313/04 , B32B2457/00 , B82Y10/00 , C09J9/02 , H01L23/49811 , H01L23/49877 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05016 , H01L2224/05026 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/29006 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/24174 , H01L2224/29101 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/00014 , H01L2924/00012
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
摘要翻译： 一种包括两个导电表面或层的装置，以及结合到两个导电表面或层的纳米结构组件，以在两个导电表面或层之间形成电连接或热连接，以及制造它们的方法。
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公开(公告)号：US08508049B2
公开(公告)日：2013-08-13
申请号：US12392017
申请日：2009-02-24
申请人： Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
发明人： Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
IPC分类号： H01L23/48
CPC分类号： C23C16/26 , B82Y10/00 , B82Y40/00 , C01B32/15 , C23C16/503 , G02B6/26 , H01B13/0026 , H01L21/0237 , H01L21/02491 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/4871 , H01L21/76802 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/3677 , H01L23/3737 , H01L23/49827 , H01L23/5226 , H01L23/53276 , H01L29/0665 , H01L29/66439 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
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17.发明授权Integrated circuits having interconnects and heat dissipators based on nanostructures 有权具有基于纳米结构的互连和散热器的集成电路公开(公告)号：US08415787B2
公开(公告)日：2013-04-09
申请号：US13476417
申请日：2012-05-21
IPC分类号： H01L23/34
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention relates to a heat dissipator that includes a conductive substrate and a plurality of nanostructures supported by the conductive substrate. The nanostructures are at least partly embedded in an insulator. Each of the nanostructures includes a plurality of intermediate layers on the conductive substrate. At least two of the plurality of intermediate layers are interdiffused, and material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure.
摘要翻译： 散热器技术领域本发明涉及一种散热器，其包括导电基板和由导电基板支撑的多个纳米结构体。 纳米结构至少部分地嵌入绝缘体中。 每个纳米结构在导电基底上包括多个中间层。 多个中间层中的至少两个相互扩散，并且相互扩散的多个中间层中的至少两个中间层的材料存在于纳米结构中。
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公开(公告)号：US20120301607A1
公开(公告)日：2012-11-29
申请号：US13570634
申请日：2012-08-09
CPC分类号： B32B37/12 , B32B37/06 , B32B37/10 , B32B37/16 , B32B38/0008 , B32B2037/1253 , B32B2307/202 , B32B2307/302 , B32B2307/706 , B32B2309/02 , B32B2309/12 , B32B2310/0831 , B32B2313/04 , B32B2457/00 , B82Y10/00 , C09J9/02 , H01L23/49811 , H01L23/49877 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05016 , H01L2224/05026 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/29006 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/24174 , H01L2224/29101 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/00014 , H01L2924/00012
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
摘要翻译： 一种包括两个导电表面或层的装置，以及结合到两个导电表面或层的纳米结构组件，以在两个导电表面或层之间形成电连接或热连接，以及制造它们的方法。
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公开(公告)号：US20120125537A1
公开(公告)日：2012-05-24
申请号：US13361436
申请日：2012-01-30
CPC分类号： B32B37/12 , B32B37/06 , B32B37/10 , B32B37/16 , B32B38/0008 , B32B2037/1253 , B32B2307/202 , B32B2307/302 , B32B2307/706 , B32B2309/02 , B32B2309/12 , B32B2310/0831 , B32B2313/04 , B32B2457/00 , B82Y10/00 , C09J9/02 , H01L23/49811 , H01L23/49877 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05016 , H01L2224/05026 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/29006 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/24174 , H01L2224/29101 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/00014 , H01L2924/00012
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
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20.发明申请Controlled Growth of a Nanostructure on a Substrate, and Electron Emission Devices Based on the Same 有权基体上的纳米结构的控制生长和基于相同的电子发射器件公开(公告)号：US20100171093A1
公开(公告)日：2010-07-08
申请号：US12725373
申请日：2010-03-16
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.
摘要翻译： 本发明提供在导电基底上生长的纳米结构的阵列。 如本文提供的纳米结构阵列适用于制造诸如电子束写入器和场致发射器件的电子器件。
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