Abstract:
An opto-electric hybrid board which is capable of suppressing the increase in light propagation losses and which is excellent in flexibility, and a method of manufacturing the same are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer of the electric circuit board. The metal layer is formed between the optical waveguide and the back surface of the insulative layer of the electric circuit board. The metal layer is patterned to have a plurality of strips. Cores of the optical waveguide are disposed in a position corresponding to a site where the metal layer is removed by the patterning.
Abstract:
An opto-electric hybrid board capable of suppressing the increase in light propagation losses and excellent in flexibility, and a method of manufacturing the same, are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer. The metal layer is formed between the cladding layer and the insulative layer. At least part of the metal layer is formed in one of first and second patterns. The first pattern includes a distribution of dot-shaped protrusions, and the second pattern includes a distribution of dot-shaped recesses. A first cladding layer fills a site where the metal layer is removed by the patterning.
Abstract:
The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.
Abstract:
An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.
Abstract:
A method for manufacturing a semiconductor includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a semiconductor chip, a Step B of preparing an adherend, a Step C of pasting the chip with sheet-shaped resin composition onto the adherend so that the sheet-shaped resin composition serves as a pasting surface, a Step D of heating the sheet-shaped resin composition to semi-cure the sheet-shaped resin composition after the Step C, and a Step E of heating the sheet-shaped resin composition at a higher temperature than in the Step D to cure the sheet-shaped resin composition after the Step D.
Abstract:
A production method for a semiconductor device is provided whereby, when peeling a support body from an attached wafer, melting of a sheet-shaped resin composition pasted to the other surface of the wafer can be suppressed. The method comprises: preparing a support body-attached wafer, said support body-attached wafer having the support body bonded, via a temporary fixing layer, to one surface of the wafer having a through electrode formed therein; preparing a dicing tape-integrated sheet-shaped resin composition having a sheet-shaped resin composition having an external shape smaller than the other surface of the wafer formed upon a dicing tape; pasting the other surface of the support body-attached wafer to the sheet-shaped resin composition in the dicing tape-integrated sheet-shaped resin composition; and melting the temporary fixing layer by a solvent and peeling the support body away from the wafer.
Abstract:
An object of the present invention is to provide an underfill sheet that enables suitable filling of unevenness of a circuit surface of a semiconductor element, a suitable connection of a terminal of the semiconductor element and a terminal of an adherend, and suppression of outgas. The present invention relates to the underfill sheet having a viscosity of 1,000 Pa·s to 10,000 Pa·s at 150° C. and 0.05 to 0.20 rotations/min; and a minimum viscosity of 100 Pa·s or more at 100 to 200° C. and 0.3 to 0.7 rotations/min.
Abstract:
An opto-electric hybrid board which is capable of suppressing the increase in light propagation losses and which is excellent in flexibility, and a method of manufacturing the same are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer of the electric circuit board. The metal layer is formed between the optical waveguide and the back surface of the insulative layer of the electric circuit board. The metal layer is patterned to have a plurality of strips. Cores of the optical waveguide are disposed in a position corresponding to a site where the metal layer is removed by the patterning.