公开(公告)号：US10014235B2

公开(公告)日：2018-07-03

申请号：US15124002

申请日：2015-02-20

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L23/29 ,  H01L21/56 ,  H01L21/683 ,  H01L25/065 ,  C09J7/00 ,  H01L25/00 ,  C09J7/24 ,  C08L63/00 ,  C08L101/12 ,  H01L23/00

CPC classification number: H01L23/29 ,  C09J7/24 ,  C09J2203/326 ,  C09J2433/006 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27002 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81127 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83127 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/0635 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2221/68304 ,  H01L21/78 ,  H01L2221/68386 ,  H01L21/304 ,  H01L2221/68368

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

公开(公告)号：US20160075871A1

公开(公告)日：2016-03-17

申请号：US14784892

申请日：2014-04-11

Applicant: NITTO DENKO CORPORATION

Inventor： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: C08L61/06 ,  H01L23/00 ,  H01L23/29 ,  H01L21/56

CPC classification number: C08L61/06 ,  C08G59/62 ,  C08L63/00 ,  C08L2203/206 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2744 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/83123 ,  H01L2224/83191 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/066 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83 ,  H01L21/304 ,  H01L21/78 ,  H01L2924/05442 ,  H01L2924/00 ,  C08L61/24

Abstract: Provided are a thermosetting resin composition with which a semiconductor device having a high connection reliability can be provided while securing availability of member materials by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the thermosetting resin composition. The present invention provides a thermosetting resin composition for producing a semiconductor device, the thermosetting resin composition comprising: an epoxy resin; and a novolak-type phenol resin having a hydroxyl equivalent of 200 g/eq or more.

Abstract translation: 提供一种热固性树脂组合物，通过减少半导体元件和被粘物之间的热响应特性的差异，可以提供具有高连接可靠性的半导体器件，同时确保部件材料的可用性，以及半导体器件的制造方法 使用热固性树脂组合物。 本发明提供一种用于制造半导体器件的热固性树脂组合物，该热固性树脂组合物包含：环氧树脂; 和酚羟基当量为200g / eq以上的酚醛清漆型酚醛树脂。

公开(公告)号：US10141217B2

公开(公告)日：2018-11-27

申请号：US14710696

申请日：2015-05-13

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L23/40 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L23/00 ,  H01L23/544

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (γ2−γ1) of the surface free energy γ2 and the surface free energy γ1 is 10 mJ/m2 or more, where γ1 represents the surface free energy of the pressure-sensitive adhesive layer and γ2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

公开(公告)号：US20160240523A1

公开(公告)日：2016-08-18

申请号：US15031219

申请日：2014-10-03

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L25/00 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/683 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L25/50 ,  C09J7/22 ,  C09J7/30 ,  C09J2203/326 ,  H01L21/02057 ,  H01L21/3105 ,  H01L21/561 ,  H01L21/683 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76897 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/27002 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/818 ,  H01L2224/83048 ,  H01L2224/83091 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2225/06541 ,  H01L2225/06579 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665

Abstract: Provided is a method for manufacturing a semiconductor device, which can manufacture a semiconductor device at a high yield ratio by suppressing dissolution of a sheet-shaped resin composition when cleaning a wafer after peeling a supporting member from the wafer. The present invention provides a method for manufacturing a semiconductor device, the method including: a step A of preparing a wafer; a step B of pasting together a second main surface of the wafer and a supporting member including a support and a temporary fixing layer formed on the support with the temporary fixing layer interposed between the second main surface and the supporting member; a step C of preparing a laminate including a dicing tape and an ultraviolet curable sheet-shaped resin composition laminated on the dicing tape; a step D of pasting together a first main surface of the wafer and the sheet-shaped resin composition; a step E of peeling the supporting member from the wafer after the step D; a step F of cleaning the second main surface of the wafer after the step E; and a step S of irradiating a peripheral part of the sheet-shaped resin composition with ultraviolet light to cure the peripheral part after the step D and before the step F, the peripheral part not overlapping with the wafer in a plan view.

Abstract translation: 提供一种制造半导体器件的方法，其可以通过在从晶片剥离支撑构件之后清洁晶片时抑制片状树脂组合物的溶解而以高屈服比制造半导体器件。 本发明提供一种制造半导体器件的方法，该方法包括：制备晶片的步骤A; 将晶片的第二主表面粘贴在一起的步骤B和包括支撑件和支撑构件的支撑构件，所述支撑构件和临时固定层形成在支撑件上，临时固定层插入在第二主表面和支撑构件之间; 制备层叠在切割带上的切割带和紫外线固化性片状树脂组合物的层叠体的工序C; 将晶片的第一主表面和片状树脂组合物粘贴在一起的步骤D; 在步骤D之后从晶片剥离支撑构件的步骤E; 在步骤E之后清洁晶片的第二主表面的步骤F; 以及在台阶D之后并且在步骤F之前用紫外线照射片状树脂组合物的周边部分以固化周边部分的步骤S，在平面图中，周边部分不与晶片重叠。

公开(公告)号：US20160240394A1

公开(公告)日：2016-08-18

申请号：US15024579

申请日：2014-09-19

Applicant: NITTO DENKO CORPORATION

Inventor： Akihiro Fukui ,  Naohide Takamoto ,  Hiroyuki Hanazono

IPC: H01L21/56 ,  H01L21/48

CPC classification number: H01L21/563 ,  H01L21/4853 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2021/60135 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/29398 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83211 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/83906 ,  H01L2224/83907 ,  H01L2224/83948 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/3841 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/05442 ,  H01L2924/0549 ,  H01L2924/095 ,  H01L2924/053 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/01004 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2224/27 ,  H01L21/304 ,  H01L2221/68368 ,  H01L21/78

Abstract: A method for producing a semiconductor device includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a bump formation surface of a semiconductor chip, a Step B of preparing a substrate for mounting on which an electrode is formed, a Step C of pasting the chip with resin composition to the substrate for mounting so that the resin composition serves as a pasting surface with the bump formed on the semiconductor chip facing toward the electrode formed on the substrate for mounting, a Step D of heating the resin composition to semi-cure the resin composition after the Step C, and a Step E of heating the resin composition at a higher temperature than that in the Step D to cure the resin composition after the Step D while bonding the bump and the electrode.

Abstract translation: 半导体装置的制造方法包括：将片状树脂组合物贴合在半导体芯片的凸块形成面上的片状树脂组合物的芯片制作工序A，准备基板的工序B 安装在其上形成电极的步骤C，将具有树脂组合物的芯片粘贴到用于安装的基板的步骤C，使得树脂组合物用作粘贴表面，其中形成在半导体芯片上的凸块面向形成在基板上的电极 安装步骤D后，加热树脂组合物以使步骤C之后的树脂组合物半固化;以及步骤E，在比步骤D高的温度下加热树脂组合物以在步骤D之后固化树脂组合物 同时焊接凸块和电极。

公开(公告)号：US20140016896A1

公开(公告)日：2014-01-16

申请号：US13897574

申请日：2013-05-20

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroyuki Hanazono ,  Yuichi Tsujita

IPC: G02B6/12

CPC classification number: G02B6/12 ,  G02B6/122 ,  G02B6/43 ,  H05K1/0274

Abstract: An opto-electric hybrid board which is excellent in the mountability of an optical element and in flexibility is provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and metal layers. The electric circuit board includes an insulative layer having front and back surfaces, and optical element mounting pads formed on the front surface of the insulative layer. The optical waveguide includes a first cladding layer, and is formed on the back surface of the insulative layer of the electric circuit board in such a manner that the first cladding layer is in contact with the back surface of the insulative layer. The metal layers are provided between the insulative layer and the first cladding layer and disposed in corresponding relation to the optical element mounting pads.

Abstract translation: 提供了一种光学元件的安装性和柔性优异的光电混合基板。 光电混合基板包括电路板，光波导和金属层。 电路板包括具有前表面和后表面的绝缘层，以及形成在绝缘层的前表面上的光学元件安装焊盘。 光波导包括第一包层，并且以第一包层与绝缘层的背面接触的方式形成在电路板的绝缘层的背面上。 金属层设置在绝缘层和第一覆层之间并且以与光学元件安装焊盘相对应的关系设置。

公开(公告)号：US09366815B2

公开(公告)日：2016-06-14

申请号：US13897574

申请日：2013-05-20

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroyuki Hanazono ,  Yuichi Tsujita

IPC: G02B6/43 ,  G02B6/12 ,  H05K1/02 ,  G02B6/122

CPC classification number: G02B6/12 ,  G02B6/122 ,  G02B6/43 ,  H05K1/0274

Abstract: An opto-electric hybrid board which is excellent in the mountability of an optical element and in flexibility is provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and metal layers. The electric circuit board includes an insulative layer having front and back surfaces, and optical element mounting pads formed on the front surface of the insulative layer. The optical waveguide includes a first cladding layer, and is formed on the back surface of the insulative layer of the electric circuit board in such a manner that the first cladding layer is in contact with the back surface of the insulative layer. The metal layers are provided between the insulative layer and the first cladding layer and disposed in corresponding relation to the optical element mounting pads.

Abstract translation: 提供了一种光学元件的安装性和柔性优异的光电混合基板。 光电混合基板包括电路板，光波导和金属层。 电路板包括具有前表面和后表面的绝缘层，以及形成在绝缘层的前表面上的光学元件安装焊盘。 光波导包括第一包层，并且以第一包层与绝缘层的背面接触的方式形成在电路板的绝缘层的背面上。 金属层设置在绝缘层和第一覆层之间并且以与光学元件安装焊盘相对应的关系设置。

公开(公告)号：US20160040045A1

公开(公告)日：2016-02-11

申请号：US14782292

申请日：2014-03-27

Applicant: NITTO DENKO CORPORATION

Inventor： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: C09J133/12 ,  C09J163/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/29 ,  C08K3/36 ,  H01L21/683

CPC classification number: C09J133/12 ,  B32B7/12 ,  B32B27/08 ,  B32B27/20 ,  B32B27/308 ,  B32B27/38 ,  B32B27/42 ,  B32B2264/10 ,  B32B2307/718 ,  B32B2405/00 ,  B32B2457/00 ,  C08G14/04 ,  C08K3/36 ,  C08L21/00 ,  C08L33/10 ,  C08L61/00 ,  C08L63/00 ,  C09J7/10 ,  C09J133/10 ,  C09J161/06 ,  C09J161/34 ,  C09J163/00 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2421/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/295 ,  H01L23/3142 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  C08L61/04

Abstract: The present invention provides an adhesive film for underfill that is capable of increasing a glass transition temperature without losing flexibility. The present invention relates to an adhesive film for underfill containing resin components containing an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and an elastomer in which a content of the epoxy resin in the resin components is 5 to 50% by weight, and the content of the phenol resin in the resin components is 5 to 50% by weight.

Abstract translation: 本发明提供了能够提高玻璃化转变温度而不丧失柔软性的底部填充用粘合膜。 本发明涉及含有数均分子量为600以下的环氧树脂，数均分子量超过500的酚醛树脂和含有环氧树脂含量的弹性体的底层填充用粘合膜， 树脂成分中的树脂为5〜50重量％，树脂成分中的酚醛树脂的含量为5〜50重量％。

公开(公告)号：US08837874B2

公开(公告)日：2014-09-16

申请号：US13866273

申请日：2013-04-19

Applicant: Nitto Denko Corporation

Inventor： Yuichi Tsujita ,  Yasuto Ishimaru ,  Hiroyuki Hanazono ,  Naoyuki Tanaka ,  Yasufumi Yamamoto ,  Shotaro Masuda ,  Mayu Ozaki

IPC: G02B6/12 ,  G02B6/43 ,  G02B6/122 ,  G02B6/136 ,  G02B6/138

CPC classification number: G02B6/122 ,  G02B6/136 ,  G02B6/138 ,  G02B6/43

Abstract: An opto-electric hybrid board capable of suppressing the increase in light propagation losses and excellent in flexibility, and a method of manufacturing the same, are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer. The metal layer is formed between the cladding layer and the insulative layer. At least part of the metal layer is formed in one of first and second patterns. The first pattern includes a distribution of dot-shaped protrusions, and the second pattern includes a distribution of dot-shaped recesses. A first cladding layer fills a site where the metal layer is removed by the patterning.

Abstract translation: 提供能够抑制光传播损耗增加和柔性优异的光电混合板及其制造方法。 光电混合基板包括电路板，光波导和金属层。 电路板包括具有前表面和后表面的绝缘层，以及形成在绝缘层的前表面上的电互连线。 光波导形成在绝缘层的背面上。 金属层形成在包覆层和绝缘层之间。 金属层的至少一部分形成为第一和第二图案之一。 第一图案包括点状突起的分布，第二图案包括点状凹部的分布。 第一包层填充通过图案化去除金属层的位置。

公开(公告)号：US08776579B2

公开(公告)日：2014-07-15

申请号：US13943299

申请日：2013-07-16

Applicant: Nitto Denko Corporation

Inventor： Hiroshi Yamazaki ,  Toshiki Naito ,  Hiroyuki Hanazono

IPC: G01N7/00 ,  G01N27/12 ,  G01R27/08

CPC classification number: G01R27/08 ,  G01N27/125 ,  G01N27/126

Abstract: A substance detection sensor includes an insulating layer; two electrodes spaced in opposed relation to each other on the insulating layer; and conductive layers formed between the two electrodes on the insulating layer so as to electrically connect the two electrodes, and of which a swelling ratio varies depending on the type and/or amount of a specific gas. The conductive layers are formed by dividing into plural layers between the two electrodes.

Abstract translation: 物质检测传感器包括绝缘层; 在绝缘层上彼此隔开的两个电极; 以及形成在绝缘层上的两个电极之间的导电层，以便电连接两个电极，并且其溶胀比根据特定气体的类型和/或量而变化。 导电层通过在两个电极之间分成多个层而形成。