公开(公告)号：US20160040045A1

公开(公告)日：2016-02-11

申请号：US14782292

申请日：2014-03-27

Applicant: NITTO DENKO CORPORATION

Inventor： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: C09J133/12 ,  C09J163/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/29 ,  C08K3/36 ,  H01L21/683

CPC classification number: C09J133/12 ,  B32B7/12 ,  B32B27/08 ,  B32B27/20 ,  B32B27/308 ,  B32B27/38 ,  B32B27/42 ,  B32B2264/10 ,  B32B2307/718 ,  B32B2405/00 ,  B32B2457/00 ,  C08G14/04 ,  C08K3/36 ,  C08L21/00 ,  C08L33/10 ,  C08L61/00 ,  C08L63/00 ,  C09J7/10 ,  C09J133/10 ,  C09J161/06 ,  C09J161/34 ,  C09J163/00 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2421/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/295 ,  H01L23/3142 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  C08L61/04

Abstract: The present invention provides an adhesive film for underfill that is capable of increasing a glass transition temperature without losing flexibility. The present invention relates to an adhesive film for underfill containing resin components containing an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and an elastomer in which a content of the epoxy resin in the resin components is 5 to 50% by weight, and the content of the phenol resin in the resin components is 5 to 50% by weight.

Abstract translation: 本发明提供了能够提高玻璃化转变温度而不丧失柔软性的底部填充用粘合膜。 本发明涉及含有数均分子量为600以下的环氧树脂，数均分子量超过500的酚醛树脂和含有环氧树脂含量的弹性体的底层填充用粘合膜， 树脂成分中的树脂为5〜50重量％，树脂成分中的酚醛树脂的含量为5〜50重量％。

公开(公告)号：US10014235B2

公开(公告)日：2018-07-03

申请号：US15124002

申请日：2015-02-20

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L23/29 ,  H01L21/56 ,  H01L21/683 ,  H01L25/065 ,  C09J7/00 ,  H01L25/00 ,  C09J7/24 ,  C08L63/00 ,  C08L101/12 ,  H01L23/00

CPC classification number: H01L23/29 ,  C09J7/24 ,  C09J2203/326 ,  C09J2433/006 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27002 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81127 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83127 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/0635 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2221/68304 ,  H01L21/78 ,  H01L2221/68386 ,  H01L21/304 ,  H01L2221/68368

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

公开(公告)号：US20160075871A1

公开(公告)日：2016-03-17

申请号：US14784892

申请日：2014-04-11

Applicant: NITTO DENKO CORPORATION

Inventor： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: C08L61/06 ,  H01L23/00 ,  H01L23/29 ,  H01L21/56

CPC classification number: C08L61/06 ,  C08G59/62 ,  C08L63/00 ,  C08L2203/206 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2744 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/83123 ,  H01L2224/83191 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/066 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83 ,  H01L21/304 ,  H01L21/78 ,  H01L2924/05442 ,  H01L2924/00 ,  C08L61/24

Abstract: Provided are a thermosetting resin composition with which a semiconductor device having a high connection reliability can be provided while securing availability of member materials by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the thermosetting resin composition. The present invention provides a thermosetting resin composition for producing a semiconductor device, the thermosetting resin composition comprising: an epoxy resin; and a novolak-type phenol resin having a hydroxyl equivalent of 200 g/eq or more.

Abstract translation: 提供一种热固性树脂组合物，通过减少半导体元件和被粘物之间的热响应特性的差异，可以提供具有高连接可靠性的半导体器件，同时确保部件材料的可用性，以及半导体器件的制造方法 使用热固性树脂组合物。 本发明提供一种用于制造半导体器件的热固性树脂组合物，该热固性树脂组合物包含：环氧树脂; 和酚羟基当量为200g / eq以上的酚醛清漆型酚醛树脂。

公开(公告)号：US10141217B2

公开(公告)日：2018-11-27

申请号：US14710696

申请日：2015-05-13

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L23/40 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L23/00 ,  H01L23/544

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (γ2−γ1) of the surface free energy γ2 and the surface free energy γ1 is 10 mJ/m2 or more, where γ1 represents the surface free energy of the pressure-sensitive adhesive layer and γ2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

公开(公告)号：US20160240523A1

公开(公告)日：2016-08-18

申请号：US15031219

申请日：2014-10-03

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L25/00 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/683 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L25/50 ,  C09J7/22 ,  C09J7/30 ,  C09J2203/326 ,  H01L21/02057 ,  H01L21/3105 ,  H01L21/561 ,  H01L21/683 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76897 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/27002 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/818 ,  H01L2224/83048 ,  H01L2224/83091 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2225/06541 ,  H01L2225/06579 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665

Abstract: Provided is a method for manufacturing a semiconductor device, which can manufacture a semiconductor device at a high yield ratio by suppressing dissolution of a sheet-shaped resin composition when cleaning a wafer after peeling a supporting member from the wafer. The present invention provides a method for manufacturing a semiconductor device, the method including: a step A of preparing a wafer; a step B of pasting together a second main surface of the wafer and a supporting member including a support and a temporary fixing layer formed on the support with the temporary fixing layer interposed between the second main surface and the supporting member; a step C of preparing a laminate including a dicing tape and an ultraviolet curable sheet-shaped resin composition laminated on the dicing tape; a step D of pasting together a first main surface of the wafer and the sheet-shaped resin composition; a step E of peeling the supporting member from the wafer after the step D; a step F of cleaning the second main surface of the wafer after the step E; and a step S of irradiating a peripheral part of the sheet-shaped resin composition with ultraviolet light to cure the peripheral part after the step D and before the step F, the peripheral part not overlapping with the wafer in a plan view.

Abstract translation: 提供一种制造半导体器件的方法，其可以通过在从晶片剥离支撑构件之后清洁晶片时抑制片状树脂组合物的溶解而以高屈服比制造半导体器件。 本发明提供一种制造半导体器件的方法，该方法包括：制备晶片的步骤A; 将晶片的第二主表面粘贴在一起的步骤B和包括支撑件和支撑构件的支撑构件，所述支撑构件和临时固定层形成在支撑件上，临时固定层插入在第二主表面和支撑构件之间; 制备层叠在切割带上的切割带和紫外线固化性片状树脂组合物的层叠体的工序C; 将晶片的第一主表面和片状树脂组合物粘贴在一起的步骤D; 在步骤D之后从晶片剥离支撑构件的步骤E; 在步骤E之后清洁晶片的第二主表面的步骤F; 以及在台阶D之后并且在步骤F之前用紫外线照射片状树脂组合物的周边部分以固化周边部分的步骤S，在平面图中，周边部分不与晶片重叠。

公开(公告)号：US20160240394A1

公开(公告)日：2016-08-18

申请号：US15024579

申请日：2014-09-19

Applicant: NITTO DENKO CORPORATION

Inventor： Akihiro Fukui ,  Naohide Takamoto ,  Hiroyuki Hanazono

IPC: H01L21/56 ,  H01L21/48

CPC classification number: H01L21/563 ,  H01L21/4853 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2021/60135 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/29398 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83211 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/83906 ,  H01L2224/83907 ,  H01L2224/83948 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/3841 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/05442 ,  H01L2924/0549 ,  H01L2924/095 ,  H01L2924/053 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/01004 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2224/27 ,  H01L21/304 ,  H01L2221/68368 ,  H01L21/78

Abstract: A method for producing a semiconductor device includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a bump formation surface of a semiconductor chip, a Step B of preparing a substrate for mounting on which an electrode is formed, a Step C of pasting the chip with resin composition to the substrate for mounting so that the resin composition serves as a pasting surface with the bump formed on the semiconductor chip facing toward the electrode formed on the substrate for mounting, a Step D of heating the resin composition to semi-cure the resin composition after the Step C, and a Step E of heating the resin composition at a higher temperature than that in the Step D to cure the resin composition after the Step D while bonding the bump and the electrode.

Abstract translation: 半导体装置的制造方法包括：将片状树脂组合物贴合在半导体芯片的凸块形成面上的片状树脂组合物的芯片制作工序A，准备基板的工序B 安装在其上形成电极的步骤C，将具有树脂组合物的芯片粘贴到用于安装的基板的步骤C，使得树脂组合物用作粘贴表面，其中形成在半导体芯片上的凸块面向形成在基板上的电极 安装步骤D后，加热树脂组合物以使步骤C之后的树脂组合物半固化;以及步骤E，在比步骤D高的温度下加热树脂组合物以在步骤D之后固化树脂组合物 同时焊接凸块和电极。

公开(公告)号：US09679797B2

公开(公告)日：2017-06-13

申请号：US14709914

申请日：2015-05-12

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/544

CPC classification number: H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54486 ,  H01L2224/13111 ,  H01L2224/13611 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81203 ,  Y10T428/31515 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.

公开(公告)号：US20170018472A1

公开(公告)日：2017-01-19

申请号：US15124002

申请日：2015-02-20

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L23/29 ,  H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L23/29 ,  C09J7/24 ,  C09J2203/326 ,  C09J2433/006 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27002 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81127 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83127 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/0635 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2221/68304 ,  H01L21/78 ,  H01L2221/68386 ,  H01L21/304 ,  H01L2221/68368

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

Abstract translation: 一种底部填充材料具有足够的固化反应性，并且即使在加载热历史的情况下也能够实现粘度的小变化和良好的电连接，包括底部填充材料的层压片材和半导体器件的制造方法。 底部填充材料在150℃下的熔融粘度在50Pa·s以上且3,000Pa·s以下，粘度变化率为500％以下，在150℃下，作为 加热处理，{（Qt-Qh）/ Qt}×100％表示的反应率为90％以上，其中Qt为从-50℃升温至300℃的总热值 Qh是在DSC测定中，在175℃加热2小时后，从-50℃升温到300℃的过程中的总热值。

公开(公告)号：US20160233184A1

公开(公告)日：2016-08-11

申请号：US15024552

申请日：2014-09-19

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroyuki Hanazono ,  Naohide Takamoto ,  Akihiro Fukui

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L21/48 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/11019 ,  H01L2224/11502 ,  H01L2224/11515 ,  H01L2224/1155 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/27334 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/27 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/81 ,  H01L2224/83

Abstract: A method for manufacturing a semiconductor includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a semiconductor chip, a Step B of preparing an adherend, a Step C of pasting the chip with sheet-shaped resin composition onto the adherend so that the sheet-shaped resin composition serves as a pasting surface, a Step D of heating the sheet-shaped resin composition to semi-cure the sheet-shaped resin composition after the Step C, and a Step E of heating the sheet-shaped resin composition at a higher temperature than in the Step D to cure the sheet-shaped resin composition after the Step D.

Abstract translation: 半导体的制造方法包括：将片状树脂组合物贴合在半导体芯片上的片状树脂组合物的制备工序A，制造被粘物的工序B，粘贴 将片状树脂组合物与片状树脂组合物贴合在被粘物上，使得片状树脂组合物作为糊状表面，在步骤C之后加热片状树脂组合物以使片状树脂组合物半固化的步骤D， 以及步骤E，其在比步骤D更高的温度下加热片状树脂组合物，以在步骤D之后固化片状树脂组合物。

公开(公告)号：US20160013089A1

公开(公告)日：2016-01-14

申请号：US14772724

申请日：2014-02-28

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Kosuke Morita ,  Akihiro Fukui ,  Hiroyuki Hanazono ,  Akira Suzuki

IPC: H01L21/683 ,  B32B27/08 ,  C08J5/18 ,  H01L21/78

CPC classification number: H01L21/6836 ,  B32B27/08 ,  B32B2270/00 ,  B32B2405/00 ,  B32B2457/14 ,  C08J5/18 ,  C08J2333/08 ,  C08J2333/12 ,  C08J2461/06 ,  C08J2463/00 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/293 ,  H01L23/295 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

Abstract: A production method for a semiconductor device is provided whereby, when peeling a support body from an attached wafer, melting of a sheet-shaped resin composition pasted to the other surface of the wafer can be suppressed. The method comprises: preparing a support body-attached wafer, said support body-attached wafer having the support body bonded, via a temporary fixing layer, to one surface of the wafer having a through electrode formed therein; preparing a dicing tape-integrated sheet-shaped resin composition having a sheet-shaped resin composition having an external shape smaller than the other surface of the wafer formed upon a dicing tape; pasting the other surface of the support body-attached wafer to the sheet-shaped resin composition in the dicing tape-integrated sheet-shaped resin composition; and melting the temporary fixing layer by a solvent and peeling the support body away from the wafer.

Abstract translation: 提供一种用于半导体器件的制造方法，其中当从附着的晶片剥离支撑体时，可以抑制粘贴到晶片的另一个表面上的片状树脂组合物的熔化。 该方法包括：准备附着有支撑体的晶片，所述支撑体附着晶片具有通过临时固定层与支撑体结合在其中形成有通孔的晶片的一个表面上; 制备具有小于形成在切割带上的晶片的另一表面的外形的片状树脂组合物的切割带一体的片状树脂组合物; 将附着有支撑体的晶片的另一个表面粘贴在切割带一体的片状树脂组合物中的片状树脂组合物上; 并通过溶剂熔化临时固定层，并将支撑体剥离晶片。