Semiconductor Laser, Laser Assembly and Method of Making a Semiconductor Laser

    公开(公告)号:US20180212404A1

    公开(公告)日:2018-07-26

    申请号:US15845983

    申请日:2017-12-18

    Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.

    OPTOELECTRONIC LAMP DEVICE
    13.
    发明申请

    公开(公告)号:US20180097335A1

    公开(公告)日:2018-04-05

    申请号:US15566575

    申请日:2016-04-15

    Abstract: An optoelectronic lamp device, including a carrier having a planar mounting face, at least one laser diode that emits laser radiation, wherein the laser diode has a fast axis and a slow axis, the laser diode is arranged on the mounting face such that the fast axis is formed extending parallel to the mounting face, a first collimator is provided for collimating laser radiation polarized in the direction of the fast axis, and a second collimator is provided for collimating laser radiation polarized in the direction of the slow axis, wherein, in the beam path of the laser radiation emitted by the laser diode, the first collimator is arranged proximally and the second collimator is arranged distally relative to the laser diode so that the laser radiation polarized in the direction of the fast axis can be collimated first, and only then can the laser radiation polarized in the direction of the slow axis be collimated.

    LASER COMPONENT
    14.
    发明申请
    LASER COMPONENT 审中-公开

    公开(公告)号:US20180026421A1

    公开(公告)日:2018-01-25

    申请号:US15654136

    申请日:2017-07-19

    Abstract: A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip.

    Method for Producing a Laser Diode, Mount and Laser Diode
    15.
    发明申请
    Method for Producing a Laser Diode, Mount and Laser Diode 有权
    生产激光二极管,安装和激光二极管的方法

    公开(公告)号:US20150228871A1

    公开(公告)日:2015-08-13

    申请号:US14424688

    申请日:2013-08-27

    Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

    Abstract translation: 在制造激光二极管的方法中,在晶片上产生多个激光二极管。 将晶片分解为晶片,每个晶片片具有并排布置的多个激光二极管。 将一个晶片片插入到第一安装件中,该第一安装件包括与晶片片的前表面重叠的第一覆盖元件,并且遮蔽晶片的正面的底部区域。 次要层沉积在晶片前面的未遮蔽的上部区域上。 晶片片被插入到第二安装件中,该第二安装件包括遮挡前表面上部区域的次要层的第二覆盖元件。 导电接触层沉积在晶片的正面的未遮蔽的底部区域上。 随后将晶片分解成单独的激光二极管。

    OPTOELECTRONIC ARRANGEMENT
    17.
    发明申请

    公开(公告)号:US20180309263A1

    公开(公告)日:2018-10-25

    申请号:US15768049

    申请日:2016-10-14

    Abstract: An arrangement includes a conversion element, an optoelectronic semiconductor component and a first carrier including a carrier plane, wherein the conversion element is arranged on the carrier plane, the optoelectronic semiconductor component emits a first electromagnetic radiation including a first beam direction and a first wavelength from a first spectral range during operation, the first electromagnetic radiation is directed onto the conversion element, the conversion element at least partly converts the first electromagnetic radiation into a second electromagnetic radiation including a second wavelength from a second spectral range, the first beam direction of the optoelectronic semiconductor component is oriented at an inclination with respect to the carrier plane, a housing including a housing cap is provided, the housing cap is configured in a hollow-body-like fashion, the housing cap and the carrier define an interior, the conversion element and the semi-conductor component are arranged in the interior, and the housing cap includes a coupling-out window that couples out the second electromagnetic radiation.

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