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    High temperature refractory joining paste
    17.
    发明授权
    High temperature refractory joining paste 失效
    高温耐火接合膏

    公开(公告)号：US06199747B1

    公开(公告)日：2001-03-13

    申请号：US09385932

    申请日：1999-08-30

    申请人： Michael A. Cohn ,  Joseph P. DeGeorge ,  Rao V. Vallabhaneni

    发明人： Michael A. Cohn ,  Joseph P. DeGeorge ,  Rao V. Vallabhaneni

    IPC分类号： B23K3112

    CPC分类号： B23K35/32 ,  B23K20/023 ,  B23K20/16 ,  B23K35/025

    摘要： A method of and novel composition for transient liquid phase bonding of refractory metal structures is described herein. Preferably, the composition comprises a first component substantially similar to the composition of the refractory metal structure, and a second component having a lower melting temperature than the first component comprising a metallic constituent selected from the group consisting of iron, nickel and cobalt. The second component acts as a melting point depressant to temporarily lower the melting point of the first component so that the join can be accomplished without melting the structure itself. Upon applying the composition to the surfaces of refractory metal structures in need of joining, the assembly is heated to a eutectic point defined as the lowest melting point of the composition. A localized liquid region is formed at the interface of the two structures which solidifies when the second component diffuses into the structures such that the region becomes increasingly refractory thereby solidifying into a substantially refractory joint.

    摘要翻译： 本文描述了难熔金属结构的瞬态液相粘合的方法和新组合物。 优选地，组合物包含与难熔金属结构的组成基本相似的第一组分，以及具有比包含选自铁，镍和钴的金属成分的第一组分更低的熔融温度的第二组分。 第二组分起着降低熔点的作用，暂时降低第一组分的熔点，从而可以在不熔化结构本身的情况下实现接合。 当将组合物施加到需要接合的难熔金属结构的表面时，将组件加热到被定义为组合物的最低熔点的共晶点。 当两个结构的界面处形成局部液体区域，当第二组分扩散到结构中时，这些结构固化，使得该区域变得越来越难以固化，从而固化成基本上耐火的接头。

    Structure and process for making substrate packages for high frequency application
    19.
    发明授权
    Structure and process for making substrate packages for high frequency application 有权
    制造高频应用基板封装的结构和工艺

    公开(公告)号：US06291272B1

    公开(公告)日：2001-09-18

    申请号：US09471563

    申请日：1999-12-23

    申请人： Ajay P. Giri ,  John U. Knickerbocker ,  David C. Long ,  Subhash L. Shinde ,  Lisa M. Studzinski ,  Rao V. Vallabhaneni

    发明人： Ajay P. Giri ,  John U. Knickerbocker ,  David C. Long ,  Subhash L. Shinde ,  Lisa M. Studzinski ,  Rao V. Vallabhaneni

    IPC分类号： H01L2144

    CPC分类号： H01L21/4867 ,  H01L21/4857 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/15311

    摘要： A process for fabricating a microelectronic structure. The process comprises processing a metal carrier having a top surface and a bottom surface, wherein the top surface and the bottom surface are processed to promote adhesion, forming a dielectric layer around the metal carrier, wherein the dielectric layer substantially covers the top surface and the bottom surface of the metal carrier, and applying a first patterned layer of conductive material to the microelectronic structure. In one preferred embodiment, the process further comprises comprising sintering the metal carrier, the dielectric layer, and the first patterned layer of conductive material. In one preferred embodiment, the process further comprises forming a via hole through the metal carrier before the forming of the dielectric layer around the metal carrier, wherein the forming of the dielectric layer comprises forming the dielectric layer inside the via hole.

    摘要翻译： 一种制造微电子结构的方法。 该方法包括处理具有顶表面和底表面的金属载体，其中处理顶表面和底表面以促进粘附，在金属载体周围形成电介质层，其中电介质层基本上覆盖顶表面和 金属载体的底表面，以及将第一图案化的导电材料层施加到微电子结构。 在一个优选实施例中，该方法还包括包括烧结金属载体，电介质层和导电材料的第一图案化层。 在一个优选实施例中，该方法还包括在金属载体周围形成电介质层之前通过金属载体形成通孔，其中介电层的形成包括在通孔内形成电介质层。