DISPLAY PANEL AND DISPLAY MODULE
    13.
    发明申请
    DISPLAY PANEL AND DISPLAY MODULE 审中-公开
    显示面板和显示模块

    公开(公告)号:US20160154268A1

    公开(公告)日:2016-06-02

    申请号:US14948559

    申请日:2015-11-23

    Abstract: A novel display panel excellent in convenience or reliability, or a novel display panel with excellent mountability on a housing is provided. The display panel includes a terminal, a first base that supports the terminal, the second base that has a region overlapping with the first base, a bonding layer that bonds the first base to the second base, a display element that is between the first base and the second base and is electrically connected to the terminal, and an insulating layer that is in contact with the first base, the second base, and the bonding layer. The insulating layer includes an opening in a region overlapping with the display element.

    Abstract translation: 提供了便利性或可靠性优异的新型显示面板,或者在壳体上具有优异的安装性的新型显示面板。 显示面板包括端子,支撑端子的第一基座,具有与第一基座重叠的区域的第二基座,将第一基座结合到第二基座的接合层,位于第一基座之间的显示元件 和第二基座,并且与端子电连接,以及与第一基座,第二基座和接合层接触的绝缘层。 绝缘层包括与显示元件重叠的区域中的开口。

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20150179813A1

    公开(公告)日:2015-06-25

    申请号:US14636589

    申请日:2015-03-03

    Abstract: It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

    Abstract translation: 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法,其中可以抑制衬底,基底保护膜和晶体硅膜中的裂纹的形成。 首先,在基板上形成包含半导体膜的层,并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃,优选为6×10-7 /℃至31.8×10-7 /℃。接下来, 用激光束照射包含半导体膜的层,使半导体膜结晶化,形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m,优选为-150N / m至0N / m。

    Equipment For Manufacturing Light-Emitting Device

    公开(公告)号:US20240266195A1

    公开(公告)日:2024-08-08

    申请号:US18578100

    申请日:2022-07-05

    CPC classification number: H01L21/6719 H01L21/67167 H01L21/67207

    Abstract: Manufacturing equipment with which steps from processing to sealing of an organic compound film can be continuously performed is provided. The manufacturing equipment can continuously perform a patterning step of a light-emitting device and a sealing step to prevent the top surfaces and side surfaces of organic layers from being exposed to the air, which allows formation of the light-emitting device which has a minute structure, high luminance, and high reliability. This manufacturing equipment can be built in an in-line system where apparatuses are arranged according to the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

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