公开(公告)号：US20190123016A1

公开(公告)日：2019-04-25

申请号：US16221986

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jen Lin ,  Tsung-Ding Wang ,  Chien-Hsiun Lee ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L24/81 ,  H01L21/563 ,  H01L21/565 ,  H01L21/566 ,  H01L21/768 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0347 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/21 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a bump structure disposed on a first substrate and a molding compound in physical contact with the bump structure. The bump structure protrudes from the molding compound. A conductive region is on a second substrate and contacts the bump structure. A no-flow underfill (NUF) material is vertically between the molding compound and the second substrate and laterally surrounds the bump structure. The NUF material is separated from the molding compound.

公开(公告)号：US09559071B2

公开(公告)日：2017-01-31

申请号：US13927972

申请日：2013-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Chun-Lin Lu ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Yen-Ping Wang ,  Shih-Wei Liang ,  Ching-Feng Yang ,  Chia-Chun Miao ,  Hung-Jen Lin

IPC: H01L29/24 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/81 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/0554 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/11015 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/1601 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/17051 ,  H01L2224/17517 ,  H01L2224/81011 ,  H01L2224/81024 ,  H01L2224/81148 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/207 ,  H01L2924/014 ,  H01L2924/00012

Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.

Abstract translation: 提供了用于形成封装结构的机构的实施例。 封装结构包括半导体管芯和衬底。 封装结构包括柱状凸起和与半导体管芯和衬底结合的细长焊料凸块。 细长焊料凸块的高度基本上等于柱形凸块的高度。 细长的焊料凸块在通过细长焊料凸块的侧壁表面的上端的第一水平面处具有第一宽度，并且在通过侧壁表面的中点的第二水平面处具有第二宽度。 第二宽度与第一宽度的比率在约0.5至约1.1的范围内。