公开(公告)号：US10665565B2

公开(公告)日：2020-05-26

申请号：US16221986

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jen Lin ,  Tsung-Ding Wang ,  Chien-Hsiun Lee ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L21/768 ,  H01L23/525

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a bump structure disposed on a first substrate and a molding compound in physical contact with the bump structure. The bump structure protrudes from the molding compound. A conductive region is on a second substrate and contacts the bump structure. A no-flow underfill (NUF) material is vertically between the molding compound and the second substrate and laterally surrounds the bump structure. The NUF material is separated from the molding compound.

公开(公告)号：US20190123017A1

公开(公告)日：2019-04-25

申请号：US16223274

申请日：2018-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Lu ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Yen-Ping Wang ,  Shih-Wei Liang ,  Ching-Feng Yang ,  Chia-Chun Miao ,  Hung-Jen Lin

IPC: H01L23/00

Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.

公开(公告)号：US20240379535A1

公开(公告)日：2024-11-14

申请号：US18779329

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shi Liu ,  Chien-Hsun Lee ,  Jiun Yi Wu ,  Hao-Cheng Hou ,  Hung-Jen Lin ,  Jung Wei Cheng ,  Tsung-Ding Wang ,  Yu-Min Liang ,  Li-Wei Chou

IPC: H01L23/522 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

公开(公告)号：US10192848B2

公开(公告)日：2019-01-29

申请号：US15712680

申请日：2017-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jen Lin ,  Tsung-Ding Wang ,  Chien-Hsiun Lee ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/525

Abstract: In some embodiments, the present disclosure relates to a package assembly having a bump on a first substrate. A molding compound is on the first substrate and contacts sidewalls of the bump. A no-flow underfill layer is on a conductive region of a second substrate. The no-flow underfill layer and the conductive region contact the bump. A mask layer is arranged on the second substrate and laterally surrounds the no-flow underfill layer. The no-flow underfill layer contacts the substrate between the conductive region and the mask layer.

公开(公告)号：US10074604B1

公开(公告)日：2018-09-11

申请号：US15499903

申请日：2017-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hao-Cheng Hou ,  Chien-Hsun Lee ,  Hung-Jen Lin ,  Jung-Wei Cheng ,  Tsung-Ding Wang

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/31 ,  H01L23/12

CPC classification number: H01L23/12 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/06 ,  H01L24/19 ,  H01L2221/68345 ,  H01L2224/0231 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2924/18162

Abstract: A method of fabricating an integrated fan-out package is provided. The method includes the followings. An integrated circuit component is mounted on a carrier. An insulating encapsulation is formed on the carrier to encapsulate sidewalls of the integrated circuit component. A plurality of conductive pillars are formed on the integrated circuit component and a dielectric layer is formed to cover the integrated circuit component and the insulating encapsulation, wherein the plurality of conductive pillars penetrate through the dielectric layer and are electrically connected to the integrated circuit component. A redistribution circuit structure is formed on the dielectric layer and the plurality of conductive pillars, wherein the redistribution circuit structure is electrically connected to the integrated circuit component through the plurality of conductive pillars, and the redistribution circuit structure and the insulating encapsulation are spaced apart by the dielectric layer.

公开(公告)号：US20240234302A1

公开(公告)日：2024-07-11

申请号：US18617530

申请日：2024-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shi Liu ,  Chien-Hsun Lee ,  Jiun Yi Wu ,  Hao-Cheng Hou ,  Hung-Jen Lin ,  Jung Wei Cheng ,  Tsung-Ding Wang ,  Yu-Min Liang ,  Li-Wei Chou

IPC: H01L23/522 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L21/566 ,  H01L21/6835 ,  H01L21/76816 ,  H01L23/3157 ,  H01L23/49822 ,  H01L24/09 ,  H01L24/81 ,  H01L23/49816 ,  H01L24/13 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/02331 ,  H01L2224/13101 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

公开(公告)号：US20210384120A1

公开(公告)日：2021-12-09

申请号：US17408840

申请日：2021-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shi Liu ,  Chien-Hsun Lee ,  Jiun Yi Wu ,  Hao-Cheng Hou ,  Hung-Jen Lin ,  Jung Wei Cheng ,  Tsung-Ding Wang ,  Yu-Min Liang ,  Li-Wei Chou

IPC: H01L23/522 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L21/768 ,  H01L21/683 ,  H01L23/498

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

公开(公告)号：US20180012860A1

公开(公告)日：2018-01-11

申请号：US15712680

申请日：2017-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jen Lin ,  Tsung-Ding Wang ,  Chien-Hsiun Lee ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L21/56 ,  H01L23/525

CPC classification number: H01L24/81 ,  H01L21/563 ,  H01L21/565 ,  H01L21/566 ,  H01L21/768 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0347 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/21 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00

Abstract: In some embodiments, the present disclosure relates to a package assembly having a bump on a first substrate. A molding compound is on the first substrate and contacts sidewalls of the bump. A no-flow underfill layer is on a conductive region of a second substrate. The no-flow underfill layer and the conductive region contact the bump. A mask layer is arranged on the second substrate and laterally surrounds the no-flow underfill layer. The no-flow underfill layer contacts the substrate between the conductive region and the mask layer.

公开(公告)号：US12142560B2

公开(公告)日：2024-11-12

申请号：US17408840

申请日：2021-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shi Liu ,  Chien-Hsun Lee ,  Jiun Yi Wu ,  Hao-Cheng Hou ,  Hung-Jen Lin ,  Jung Wei Cheng ,  Tsung-Ding Wang ,  Yu-Min Liang ,  Li-Wei Chou

IPC: H01L23/522 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

公开(公告)号：US20220359436A1

公开(公告)日：2022-11-10

申请号：US17869080

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung Wei Cheng ,  Hai-Ming Chen ,  Chien-Hsun Lee ,  Hao-Cheng Hou ,  Hung-Jen Lin ,  Chun-Chih Chuang ,  Ming-Che Liu ,  Tsung-Ding Wang

IPC: H01L23/00 ,  H01L25/10 ,  H01L21/31 ,  H01L21/311 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/528

Abstract: Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.