公开(公告)号：US09275958B2

公开(公告)日：2016-03-01

申请号：US14207224

申请日：2014-03-12

Applicant: XINTEC INC.

Inventor： Yi-Min Lin ,  Yi-Ming Chang ,  Shu-Ming Chang ,  Yen-Shih Ho ,  Tsang-Yu Liu ,  Chia-Ming Cheng

IPC: H01L27/146 ,  H01L23/552 ,  H01L21/48 ,  H01L21/78 ,  H01L29/06 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/552 ,  H01L21/4814 ,  H01L21/78 ,  H01L23/544 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2223/5446 ,  H01L2224/02313 ,  H01L2224/0235 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/451 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/92 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01078 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2924/014 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括：具有第一表面和第二表面的半导体衬底; 从所述第一表面延伸到所述第二表面的第一凹部; 从所述第一凹部的底部朝向所述第二表面延伸的第二凹部，其中所述第一凹部的侧壁和所述底部以及所述第二凹部的第二侧壁和第二底部一起形成所述半导体衬底的外侧表面; 布置在所述第一表面上并延伸到所述第一凹部和/或所述第二凹部中的导线层; 位于所述导线层和所述半导体基板之间的绝缘层; 以及设置在所述第一表面上并且具有至少一个孔的金属遮光层，其中所述至少一个孔的形状是四边形。

公开(公告)号：US09165890B2

公开(公告)日：2015-10-20

申请号：US13941854

申请日：2013-07-15

Applicant: XINTEC INC.

Inventor： Yen-Shih Ho ,  Shih-Chin Chen ,  Yi-Ming Chang ,  Chien-Hui Chen ,  Chia-Ming Cheng ,  Wei-Luen Suen ,  Chen-Han Chiang

IPC: H01L23/544 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/78 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2224/02371 ,  H01L2224/02377 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/06155 ,  H01L2224/0616 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/14155 ,  H01L2224/1416 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and an opposite second surface; a device region disposed in the substrate; a dielectric layer located on the first surface of the semiconductor substrate; a plurality of conducting pads located in the dielectric layer and electrically connected to the device region; at least one alignment mark disposed in the semiconductor substrate and extending from the second surface towards the first surface.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括：具有第一表面和相对的第二表面的半导体衬底; 设置在所述基板中的装置区域; 位于半导体衬底的第一表面上的电介质层; 位于所述电介质层中并电连接到所述器件区域的多个导电焊盘; 设置在所述半导体衬底中并且从所述第二表面朝向所述第一表面延伸的至少一个对准标记。

公开(公告)号：US11450697B2

公开(公告)日：2022-09-20

申请号：US16581594

申请日：2019-09-24

Applicant: XINTEC INC.

Inventor： Kuei-Wei Chen ,  Chia-Ming Cheng ,  Chia-Sheng Lin

IPC: H01L27/146

Abstract: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.

公开(公告)号：US10347616B2

公开(公告)日：2019-07-09

申请号：US15590302

申请日：2017-05-09

Applicant: XINTEC INC.

Inventor： Hsin Kuan ,  Chin-Ching Huang ,  Chia-Ming Cheng

IPC: H01L25/16 ,  H01L31/0203 ,  H01L23/538 ,  H01L23/00 ,  H01L27/146 ,  H01L23/051

Abstract: A chip package includes a sensing chip, a computing chip, and a protective layer annularly surrounding the sensing chip and the computing chip. The sensing chip has a first conductive pad, a sensing element, a first surface and a second surface opposite to each other. And the sensing element is disposed on the first surface. The computing chip has a second conductive pad and a computing element. The protective layer is formed by lamination and at least exposes the sensing element. The chip package further includes a conductive layer underneath the second surface of the sensing chip and extending to be in contact with the first conductive pad and the second conductive pad.

公开(公告)号：US09177862B2

公开(公告)日：2015-11-03

申请号：US13727976

申请日：2012-12-27

Applicant: Xintec Inc.

Inventor： Yen-Shih Ho ,  Hsin Kuan ,  Long-Sheng Yeou ,  Tsang-Yu Liu ,  Chia-Ming Cheng

IPC: H01L21/56 ,  H01L23/498 ,  H01L21/78 ,  H01L23/48 ,  H01L23/28 ,  H01L21/82 ,  H01L23/14 ,  H01L21/683 ,  H01L21/768 ,  B81B7/00 ,  H01L23/00

CPC classification number: H01L21/82 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/14 ,  H01L23/147 ,  H01L24/08 ,  H01L24/24 ,  H01L24/80 ,  H01L24/82 ,  H01L24/92 ,  H01L24/97 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24146 ,  H01L2224/80006 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2224/82 ,  H01L2224/80 ,  H01L21/78

Abstract: A fabrication method of a semiconductor stack structure mainly includes: singulating a wafer of a first specification into a plurality of chips; rearranging the chips into a second specification of a wafer so as to stack the chips on a substrate of the second specification through a plurality of blocks; forming a redistribution layer on the chips; and performing a cutting process to obtain a plurality of semiconductor stack structures. Therefore, the present invention allows a wafer of a new specification to be processed by using conventional equipment without the need of new factory buildings or equipment. As such, chip packages can be timely supplied to meet the replacement speed of electronic products.

Abstract translation: 半导体堆叠结构的制造方法主要包括：将第一规格的晶片分割成多个芯片; 将芯片重新排列成晶片的第二规格，以通过多个块将芯片堆叠在第二规格的基板上; 在芯片上形成再分配层; 并执行切割处理以获得多个半导体堆叠结构。 因此，本发明允许通过使用常规设备来处理新规格的晶片，而不需要新的工厂建筑物或设备。 因此，可以及时提供芯片封装以满足电子产品的更换速度。

公开(公告)号：US09064950B2

公开(公告)日：2015-06-23

申请号：US14135506

申请日：2013-12-19

Applicant: XINTEC INC.

Inventor： Chia-Lun Tsai ,  Chia-Ming Cheng ,  Long-Sheng Yeou

IPC: H01L21/78 ,  B81C1/00

CPC classification number: H01L21/78 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00825 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2203/0118

Abstract: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.

Abstract translation: 本发明的实施例涉及一种芯片封装及其制造方法，其包括芯片保护层或附加的蚀刻停止层，以覆盖导电焊盘，以防止切割残留物损坏或划伤导电焊盘。 根据另一个实施例，当蚀刻结构蚀刻区域和硅衬底上的金属间电介质层时，可以使用芯片保护层，其上形成的附加蚀刻停止层或具有导电焊盘或其组合的金属蚀刻停止层， 形成随后的半导体制造工艺的开口。

公开(公告)号：US11973095B2

公开(公告)日：2024-04-30

申请号：US17861011

申请日：2022-07-08

Applicant: XINTEC INC.

Inventor： Kuei-Wei Chen ,  Chia-Ming Cheng ,  Chia-Sheng Lin

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14698 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.

公开(公告)号：US11749618B2

公开(公告)日：2023-09-05

申请号：US17980507

申请日：2022-11-03

Applicant: XINTEC INC.

Inventor： Chia-Ming Cheng ,  Shu-Ming Chang

IPC: H01L23/528 ,  H01L23/552 ,  H01L23/66 ,  H01L21/56 ,  H01L23/31 ,  H01L23/522

CPC classification number: H01L23/552 ,  H01L21/565 ,  H01L23/3135 ,  H01L23/5226 ,  H01L23/5286 ,  H01L23/66 ,  H01L2223/6605 ,  H01L2223/6677

Abstract: A chip package includes a first substrate, a second substrate, a first conductive layer, and a metal layer. The first substrate has a bottom surface and an inclined sidewall adjoining the bottom surface, and an obtuse angle is between the bottom surface and the inclined sidewall. The second substrate is over the first substrate and has a portion that laterally extends beyond the inclined sidewall of the first substrate. The first conductive layer is between the first substrate and the second substrate. The metal layer is on said portion of the second substrate, on the bottom surface and the inclined sidewall of the first substrate, and electrically connected to an end of the first conductive layer.

公开(公告)号：US11387201B2

公开(公告)日：2022-07-12

申请号：US17023199

申请日：2020-09-16

Applicant: XINTEC INC.

Inventor： Po-Han Lee ,  Chia-Ming Cheng ,  Jiun-Yen Lai ,  Ming-Chung Chung ,  Wei-Luen Suen

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/552 ,  H01L21/3213

Abstract: A chip package includes a semiconductor substrate, a supporting element, an antenna layer, and a redistribution layer. The semiconductor substrate has an inclined sidewall and a conductive pad that protrudes from the inclined sidewall. The supporting element is located on the semiconductor substrate, and has a top surface facing away from the semiconductor substrate, and has an inclined sidewall adjoining the top surface. The antenna layer is located on the top surface of the supporting element. The redistribution layer is located on the inclined sidewall of the supporting element, and is in contact with a sidewall of the conductive pad and an end of the antenna.

公开(公告)号：US10446504B2

公开(公告)日：2019-10-15

申请号：US15980577

申请日：2018-05-15

Applicant: XINTEC INC.

Inventor： Chia-Ming Cheng ,  Po-Han Lee ,  Wei-Chung Yang ,  Kuan-Jung Wu ,  Shu-Ming Chang

IPC: H01L23/52 ,  H01L23/00 ,  H01L25/16 ,  H01L21/56 ,  H01L23/31 ,  H01L23/04 ,  H01L27/146

Abstract: A chip package is provided. A first bonding structure is disposed on a first redistribution layer (RDL). A first chip includes a sensing region and a conductive pad that are adjacent to an active surface. The first chip is bonded onto the first RDL through the first bonding structure. The first bonding structure is disposed between the conductive pad and the first RDL. A molding layer covers the first RDL and surrounds the first chip. A second RDL is disposed on the molding layer and the first chip and is electrically connected to the first RDL. A second chip is stacked on a non-active surface of the first chip and is electrically connected to the first chip through the second RDL, the first RDL, and the first bonding structure. A method of forming the chip package is also provided.