公开(公告)号：US06645883B2

公开(公告)日：2003-11-11

申请号：US09863382

申请日：2001-05-24

申请人： Youichi Yamamoto ,  Hiroshi Ikakura ,  Tomomi Suzuki ,  Yuichiro Kotake ,  Yoshimi Shioya ,  Kouichi Ohira ,  Shoji Ohgawara ,  Kazuo Maeda

发明人： Youichi Yamamoto ,  Hiroshi Ikakura ,  Tomomi Suzuki ,  Yuichiro Kotake ,  Yoshimi Shioya ,  Kouichi Ohira ,  Shoji Ohgawara ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612

摘要： The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.

摘要翻译： 本发明公开了一种形成具有低介电常数的绝缘膜的成膜方法。 该方法包括以下步骤：将惰性气体和氮气（N 2）的至少一种稀释气体添加到由硅氧烷和N 2 O组成的主要沉积气体组分中，将所得沉积气体转化成等离子体，引起等离子体中的反应，以及 在用于成膜的基板上形成绝缘膜25,27或28。

公开(公告)号：US06911405B2

公开(公告)日：2005-06-28

申请号：US09988685

申请日：2001-11-20

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

IPC分类号： H01L21/28 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/76 ,  H01L21/26 ,  H01L21/44

CPC分类号： H01L21/7685 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76886

摘要： A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

摘要翻译： 由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体，然后将铜布线层的表面暴露于等离子体 的处理气体，由此将铜布线层的表面部分重整并制成铜扩散防止屏障。 根据该方法，可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。

公开(公告)号：US06852651B2

公开(公告)日：2005-02-08

申请号：US09967991

申请日：2001-10-02

申请人： Yoshimi Shioya ,  Yuichiro Kotake ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuichiro Kotake ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C23C16/40 ,  C23C16/509 ,  H01L21/205 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/469

CPC分类号： H01L21/0214 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/76832 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及一种半导体器件，其中通过覆盖主要由铜膜制成的布线形成具有低介电常数的层间绝缘膜及其制造方法。 在半导体器件的制造中，通过将成膜气体转化为等离子体来反应，在基板上形成具有低介电常数的绝缘膜。 该方法包括通过将成膜气体以第一气体压力覆盖到等离子体中并在低压绝缘膜上形成高压绝缘膜，通过将成膜气体 在第二气体压力下，高于第一气体压力，进入等离子体和反应。

公开(公告)号：US06472334B2

公开(公告)日：2002-10-29

申请号：US09824106

申请日：2001-04-03

申请人： Hiroshi Ikakura ,  Tomomi Suzuki ,  Kazuo Maeda ,  Yoshimi Shioya ,  Kouichi Ohira

发明人： Hiroshi Ikakura ,  Tomomi Suzuki ,  Kazuo Maeda ,  Yoshimi Shioya ,  Kouichi Ohira

IPC分类号： H01L21469

CPC分类号： H01L21/02126 ,  C23C16/402 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612

摘要： There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.

摘要翻译： 提供了通过使具有硅氧烷键的化合物和Si-R键（R为烷基）与含有氧化气体和H 2的质子化反应气体反应而在基板上形成含硅绝缘膜的方法。

公开(公告)号：US06479408B2

公开(公告)日：2002-11-12

申请号：US09843725

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76838

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21，并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤，其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜，绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成，该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O，H2O和CO2组成的组相互反应。

公开(公告)号：US20050221622A1

公开(公告)日：2005-10-06

申请号：US11090272

申请日：2005-03-28

申请人： Yoshimi Shioya ,  Haruo Shimoda ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Haruo Shimoda ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C09D4/00 ,  C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/3122 ,  C09D4/00 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835

摘要： The present invention relates to a deposition method in which an insulating film that coats wirings mainly made of copper film and has low dielectric constant. Its constitution in the deposition method, where deposition gas is transformed into plasma and reaction is caused to form the insulating film having low dielectric constant, is that the deposition gas has a first silicon containing compound having cyclic siloxane bond and at least one of methyl group and methoxy group, and a second silicon containing organic compound having straight-chain siloxane bond and at least one of methyl group and methoxy group, as primary constituent gas.

摘要翻译： 本发明涉及一种沉积方法，其中涂覆主要由铜膜制成的布线并具有低介电常数的绝缘膜。 使沉积气体转化为等离子体并进行反应的沉积方法的结构形成具有低介电常数的绝缘膜，即沉积气体具有含有环状硅氧烷键的第一含硅化合物和甲基的至少一种 和甲氧基，以及具有直链硅氧烷键和甲基和甲氧基中的至少一个作为主要构成气体的第二含硅有机化合物。

公开(公告)号：US06673725B2

公开(公告)日：2004-01-06

申请号：US09843726

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 低介电常数绝缘膜是通过含有N 2 O，H 2 O或CO 2的含氧气体，氨（NH 3）和至少一种具有硅氧烷键的烷基化合物的成膜气体的等离子体 和甲基硅烷（SiHn（CH 3）4-n：n = 0,1,2,3）。

公开(公告)号：US07238629B2

公开(公告)日：2007-07-03

申请号：US10867178

申请日：2004-06-15

申请人： Yoshimi Shioya ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kazuo Maeda

IPC分类号： H01L21/44 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02216 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122

摘要： The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

摘要翻译： 本发明涉及一种低介电常数绝缘膜的沉积方法，其包括以下步骤：产生包含至少一个硅源的第一沉积气体，其选自含有硅氧烷键的含硅有机化合物和含硅有机化合物 具有CH 3 3个基团的氧化剂和由具有烷氧基的含氧有机化合物（OR：O是氧而R是CH 3或C 2）组成的氧化剂， 向第一沉积气体施加电力以产生等离子体，然后引起反应，从而在衬底上形成低介电常数绝缘膜。

公开(公告)号：US20050014391A1

公开(公告)日：2005-01-20

申请号：US10867178

申请日：2004-06-15

申请人： Yoshimi Shioya ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C23C16/40 ,  H01L21/205 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： H01L21/02216 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122

摘要： The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

摘要翻译： 本发明涉及一种低介电常数绝缘膜的沉积方法，其包括以下步骤：产生包含至少一个硅源的第一沉积气体，其选自含有硅氧烷键的含硅有机化合物和含硅有机化合物 具有CH3基团的氧化剂和由具有烷氧基的含氧有机化合物（OR：O是氧而R是CH3或C2H5）组成的氧化剂，并且向第一沉积气体施加电力以产生等离子体，然后使反应形成 低介电常数绝缘膜。

公开(公告)号：US07132171B2

公开(公告)日：2006-11-07

申请号：US10847670

申请日：2004-05-18

申请人： Toshiyuki Ohdaira ,  Yoshimi Shioya

发明人： Toshiyuki Ohdaira ,  Yoshimi Shioya

IPC分类号： B32B25/20

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  Y10T428/31663

摘要： The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.