摘要:
A method of manufacturing an interconnect substrate by electroless plating, including: (a) forming a catalyst layer with a specific pattern on a substrate; (b) immersing the substrate in a first electroless plating solution including a first metal to deposit the first metal on the catalyst layer to form a first metal layer; and (c) immersing the substrate in a second electroless plating solution including a second metal to deposit the second metal on the first metal layer to form a second metal layer, an ionization tendency of the first metal being higher than an ionization tendency of the second metal.
摘要:
A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; applying a sol-gel solution including a material for an inorganic substrate to the first support substrate; removing a solvent from the sol-gel solution by heat treatment to form the inorganic substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the inorganic substrate.
摘要:
A core structure of a heat exchanger includes seat plates arranged opposite to each other with a predetermined space interposed between them and formed with tube holes, reinforcements connecting the seat plates at their end portions, tubes fixed at its both end portions by insertion into the tube holes, corrugated fins arranged between the tubes, and an upper and lower tanks attached to the seat plates. The tanks are connected by the tubes so that coolant flows between the tanks through the tubes. Tubes arranged at outermost positions of a core part among the tubes are inserted at its end portions by insert members so that the insert members can increase rigidity of the end positions of the outermost positioned tubes and ensure flowing of the coolant between the tanks through the outermost positioned tubes.
摘要:
A liquid crystal display device includes a first substrate including a thin film transistor, a data line, a pixel electrode, and a common electrode, a second substrate, and liquid crystal sandwiched between the first and second substrates, wherein an image signal is applied to the thin film transistor through the data line to generate an electric field between the pixel electrode receiving the image signal and the common electrode such that the liquid crystal is rotated by the electric field in a plane which is in parallel with the first substrate. The first substrate includes an electrically insulating inorganic film covering the data line therewith, a first island-shaped electrically insulating organic film formed on the electrically insulating inorganic film above the data line, and a shield common electrode covering the first island-shaped electrically insulating organic film therewith and overlapping the data line when viewed vertically.
摘要:
A method for manufacturing a wiring substrate includes the steps of: (a) forming a ground layer precursor having reactive groups including nitrogen atoms in first and second areas of a substrate; (b) irradiating light energy to remove the reactive groups from the ground layer precursor to thereby form a ground layer charged in cathode; (c) patterning a cationic surface-active agent of anode to be left on the first area of the substrate with the ground layer as a ground; (d) providing a catalyst at the surface-active agent; and (e) forming a wiring along the first area of the substrate by precipitating a metal layer to the catalyst.
摘要:
A method of manufacturing an interconnect substrate by electroless plating which causes a metal to be deposited without using a plating resist, the method including: (a) immersing a substrate in a catalyst solution including palladium, hydrogen peroxide, and hydrochloric acid to form a catalyst layer on the substrate; and (b) depositing a metal on the catalyst layer by immersing the substrate in an electroless plating solution to form a metal layer.
摘要:
A common mode choke coil has a ferrite core provided with a pair of first lateral walls opposite to each other, a pair of second lateral walls opposite to each other, a pair of through holes formed through the pair of first lateral walls, a cover having a substantial H-shape to thereby provide an opened region opened upwardly by cooperating with the pair of through holes, a bottom having a substantial rectangular shape, a bobbin extending vertically across the pair of through holes and electrodes extending from the bottom to the cover, being on an external surface of the common mode choke coil. Windings are electrically connected to the electrodes, respectively.
摘要:
A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.
摘要:
In a tank structure of a heat exchanger, at least one of a first tank member and a second tank member which have substantially U-shaped cross sections has, in coupling portions thereof, bent portions made of bent plate materials. The first tank member and the second tank member have first to fourth slits that are formed at least in the bent portions near end faces. End face closing members have main portions capable of closing end-face openings formed by the first and second tank members, and the main portions have on outer peripheries thereof integrally formed first lock portions and second lock portions inserted in and locked by the slits to cover gaps formed between the first and second tank members.
摘要:
Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.