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    Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors
    11.
    发明申请
    Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors 失效
    非磁性半导体中电子的铁磁半导体自旋偏振器

    公开(公告)号：US20060197128A1

    公开(公告)日：2006-09-07

    申请号：US11071535

    申请日：2005-03-04

    申请人： Viatcheslav Osipov ,  Yorgos Stylianos

    发明人： Viatcheslav Osipov ,  Yorgos Stylianos

    IPC分类号： H01L29/76

    CPC分类号： H01F10/193 ,  H01F1/401 ,  H01F1/405

    摘要： An efficient spin polarizer in nonmagnetic semiconductors is provided. Previous spin injection devices suffered from very low efficiency (less than 35%) into semiconductors. An efficient spin polarizer is provided which is based on ferromagnetic-semiconductor heterostructures and ensures spin polarization of electrons in nonmagnetic semiconductors close to 100% near the ferromagnetic-semiconductor junctions at wide temperature intervals ranging from very low temperatures to room temperatures even in the case when spin polarization of electrons in the ferromagnetic layer is relatively low.

    摘要翻译： 提供了非磁性半导体中有效的自旋偏振器。 以前的自旋注入装置的半导体效率非常低（小于35％）。 提供了一种有效的自旋偏振器，其基于铁磁半导体异质结构，并确保非磁性半导体中电子的自旋极化在非常低的温度至室温的宽温度范围内在铁磁半导体结附近接近100％，即使在 铁磁层中电子的自旋极化相对较低。

    Magnetic switching device and magnetic memory using the same
    12.
    发明授权
    Magnetic switching device and magnetic memory using the same 有权
    磁性开关器件和使用其的磁性存储器

    公开(公告)号：US06839273B2

    公开(公告)日：2005-01-04

    申请号：US10783286

    申请日：2004-02-20

    申请人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

    发明人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

    IPC分类号： G11B5/39 ,  G11C11/15 ,  H01F10/18 ,  H01F10/193 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  G11C11/14

    CPC分类号： H01F10/1936 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F1/405 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    摘要： A magnetic switching device is provided, which has a configuration different from that of a conventional example and is capable of enhancing an energy conversion efficiency for changing the magnetized state of a magnetic substance. A magnetic memory using the magnetic switching device also is provided The magnetic switching device includes a magnetic layer, a transition layer magnetically coupled to the magnetic layer, and a carrier supplier including at least one selected from metal and a semiconductor. The transition layer and the carrier supplier are placed in such a manner that a voltage can be applied between the transition layer and the carrier supplier. The transition layer undergoes a non-ferromagnetism—ferromagnetism transition by the application of a voltage, and the magnetized state of the magnetic layer is changed by the transition of the transition layer.

    摘要翻译： 提供一种磁性开关装置，其具有与常规示例不同的配置，并且能够提高用于改变磁性物质的磁化状态的能量转换效率。 还提供了使用磁开关装置的磁存储器。磁开关装置包括磁性层，磁耦合到磁性层的过渡层和包括从金属和半导体中选择的至少一种的载体供体。 过渡层和载体供给器的放置方式是可以在过渡层和载体供应者之间施加电压。 过渡层通过施加电压而经历非铁磁 - 铁磁转变，并且通过过渡层的转变改变磁性层的磁化状态。

    Ferroic materials having domain walls and related devices
    15.
    发明申请
    Ferroic materials having domain walls and related devices 审中-公开
    具有畴壁和相关装置的铁素体

    公开(公告)号：US20110308580A1

    公开(公告)日：2011-12-22

    申请号：US12930507

    申请日：2011-01-07

    申请人： Jan Seidel ,  Ramamoorthy Ramesh ,  Lane Martin ,  Seung-Yeul Yang

    发明人： Jan Seidel ,  Ramamoorthy Ramesh ,  Lane Martin ,  Seung-Yeul Yang

    IPC分类号： H01L31/02 ,  G11B5/65

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  B82Y25/00 ,  C30B23/02 ,  C30B29/24 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/005 ,  G11C19/0841 ,  H01F1/10 ,  H01F1/405 ,  H01L28/55 ,  H02S99/00

    摘要： Ferroic materials and methods for diverse applications including nanoscale memory, logic and photovoltaic devices are described. In one aspect, ferroic thin films including insulating domains separated by conducting domain walls are provided, with both the insulating domains and conducting domain walls intrinsic to the ferroic thin films. The walls are on the order of about 2 nm wide, providing virtually two dimensional conducting sheets through the insulating material. Also provided are methods of writing, reading, erasing and manipulating conducting domain walls. According to various embodiments, logic and memory devices having conducting domain walls as nanoscale features are provided. In another aspect, ferroic thin films having photovoltaic activity are provided. According to various embodiments, photovoltaic and optoelectronic devices are provided.

    摘要翻译： 描述了用于多种应用的铁材料和方法，包括纳米级存储器，逻辑和光伏器件。 在一个方面，提供了包括通过导电畴壁分离的绝缘域的铁薄膜，其中绝缘畴和铁磁薄膜固有的导电畴壁。 这些壁的宽度大约为2nm，通过绝缘材料提供几乎二维的导电片。 还提供写入，读取，擦除和操纵导电壁的方法。 根据各种实施例，提供了具有作为纳米尺度特征的导电畴壁的逻辑和存储器件。 另一方面，提供了具有光伏活性的铁薄膜。 根据各种实施例，提供了光电和光电器件。

    METHOD FOR PRODUCING MAGNETIC MICROPARTICLES, MAGNETIC MICROPATICLES OBTAINED THEREFROM, MAGNETIC FLUID, AND METHOD FOR PRODUCING MAGNETIC PRODUCT
    16.
    发明申请
    METHOD FOR PRODUCING MAGNETIC MICROPARTICLES, MAGNETIC MICROPATICLES OBTAINED THEREFROM, MAGNETIC FLUID, AND METHOD FOR PRODUCING MAGNETIC PRODUCT 有权
    生产磁性微球的方法，由其获得的磁性微量元素，磁性液体和用于生产磁性产品的方法

    公开(公告)号：US20100243947A1

    公开(公告)日：2010-09-30

    申请号：US12680524

    申请日：2008-09-11

    申请人： Masakazu Enomura

    发明人： Masakazu Enomura

    IPC分类号： H01F1/01 ,  H01F1/00

    CPC分类号： H01F1/447 ,  B01D9/0054 ,  B01F7/00775 ,  B01F7/00791 ,  B01F7/00875 ,  B01J19/1887 ,  B01J2219/00139 ,  B22F1/0022 ,  B22F2001/0092 ,  B82Y30/00 ,  C22C2202/02 ,  H01F1/405 ,  Y10S977/896

    摘要： It is an object to provide a method for producing magnetic microparticles, which produces monodispersed magnetic microparticles, causes no clogging with a product due to self-dischargeability, requires no great pressure, and is excellent in productivity. In the method for producing magnetic microparticles, at least two fluids are used, and at least one kind of the fluids is a fluid containing at least one kind of magnetic raw material, and at least one kind of the fluids other than the above fluid is a fluid containing at least one kind of a magnetic microparticles-separating agent, and the respective fluids join together in a thin film fluid formed between two processing surfaces arranged to be opposite to each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, whereby magnetic microparticles are separated in the thin film fluid to obtain the magnetic microparticles.

    摘要翻译： 本发明的目的是提供一种制造单分散磁性微粒的磁性微粒的制造方法，不会因自放电性而导致产品堵塞，不需要大的压力，生产率优异。 在制造磁性微粒的方法中，使用至少两种流体，至少一种流体是含有至少一种磁性原料的流体，并且除上述流体以外的至少一种流体是 包含至少一种磁性微粒分离剂的流体，并且各流体在彼此相对布置的两个处理表面之间形成的薄膜流体中接合在一起，以便能够接近和分离每个 另一方面，其中至少一个相对于另一个旋转，由此磁性微粒在薄膜流体中分离以获得磁性微粒。

    Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics
    20.
    发明申请
    Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics 审中-公开
    基于铁磁IV基的半导体，基于铁磁III-V族的化合物半导体或基于铁磁性II-IV族的化合物半导体，以及用于调整其铁磁特性的方法

    公开(公告)号：US20060108619A1

    公开(公告)日：2006-05-25

    申请号：US10516687

    申请日：2003-06-05

    申请人： Hiroshi Yoshida ,  Kazuya Araki ,  Kazunori Sato

    发明人： Hiroshi Yoshida ,  Kazuya Araki ,  Kazunori Sato

    IPC分类号： H01L29/94 ,  H01L21/00

    CPC分类号： H01F1/404 ,  H01F1/0009 ,  H01F1/402 ,  H01F1/405 ,  H01F10/193

    摘要： Disclosed is a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor, comprising a group IV-based semiconductor or a group III-V-based or group II-VI-based compound semiconductor, which contains at least one rare-earth metal element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu. The ferromagnetic characteristic of the ferromagnetic semiconductor is controlled by adjusting the concentration of the rare-earth metal element, combining two or more of the rare-earth metal elements or adding a p-type or n-type dopant. The present invention can provide a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor which exhibits light transparency and stable ferromagnetic characteristics.

    摘要翻译： 公开了一种铁基IV族半导体或基于III-V族或II-VI族的化合物半导体，其包含基于IV族的半导体或III-V族或II-VI族 化合物半导体，其含有选自Ce，Pr，Nd，Pm，Sm，Eu，Gd，Th，Dy，Ho，Er，Tm，Yb和Lu中的至少一种稀土金属元素。 通过调节稀土金属元素的浓度，组合两种或更多种稀土金属元素或添加p型或n型掺杂剂来控制铁磁性半导体的铁磁特性。 本发明可以提供具有光透射性和稳定的铁磁特性的铁磁性IV族半导体或基于III-V族或II-VI族的化合物半导体。