公开(公告)号：US12033837B2

公开(公告)日：2024-07-09

申请号：US18237673

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Vijay D. Parkhe

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  H01L21/67069

Abstract: Embodiments of the present disclosure generally relate to an electrostatic chuck assembly suitable for use in cryogenic applications. In one or more embodiments, an electrostatic chuck assembly is provided and includes an electrostatic chuck having a substrate supporting surface opposite a bottom surface, a cooling plate having a top surface, where the cooling plate contains an aluminum alloy having a coefficient of thermal expansion (CTE) of less than 22 ppm/° C., and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling plate, where the bonding layer contains a silicone material.

公开(公告)号：US20240222092A1

公开(公告)日：2024-07-04

申请号：US18606853

申请日：2024-03-15

Applicant: Tokyo Electron Limited

Inventor： Takahiko SATO ,  Tetsuo YOSHIDA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J2237/2007

Abstract: A plasma processing apparatus includes a plasma processing chamber, a base in the plasma processing chamber, and an electrostatic chuck on the base. The electrostatic chuck includes a dielectric structure having a substrate support surface and a ring support surface, an electrostatic clamp electrode inside the dielectric structure, a bias electrode inside the dielectric structure and below the electrostatic clamp electrode, and at least one conductive structure at least partially located inside the dielectric structure. The dielectric structure has a through-hole extending through the dielectric structure from the substrate support surface or the ring support surface to a lower surface of the dielectric structure. The at least one conductive structure surrounds the through-hole and extends upward from a same level as the bias electrode in a height direction or from a higher level than the bias electrode.

公开(公告)号：US12014904B2

公开(公告)日：2024-06-18

申请号：US17370766

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul Park ,  Hyonwook Ra

IPC: H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32568 ,  H01J37/32422 ,  H01J37/32715 ,  H01J37/32082 ,  H01J2237/2007 ,  H01L21/32136

Abstract: A wafer processing apparatus is provided. The wafer processing apparatus includes a chamber body defining a plasma region configured that plasma is generated in the plasma region, a wafer support arranged in the chamber body and configured to support a wafer, first and second electrodes arranged between the wafer support and the plasma region and having apertures configured to guide a path of ions of the plasma, a first power source configured to apply, to the first electrode, a voltage that is higher than a voltage applied to the second electrode, and a second power source configured to apply, to the wafer support, a voltage that is higher than the voltage applied to the second electrode.

公开(公告)号：US12002662B2

公开(公告)日：2024-06-04

申请号：US17598191

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro Kawawa ,  Hideomi Hosaka

IPC: H01J37/32 ,  H01L21/683 ,  H05F3/00

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H05F3/00 ,  H01J2237/2007

Abstract: There is provided an electrostatic attraction device having an electrostatic chuck in which an electrode and a heater are embedded in a dielectric. The device comprises: a DC power source unit having a DC power source configured to supply a DC power to the electrode; a first neutralizing circuit connected to a power supply path between the DC power source and the electrode; and a second neutralizing circuit connected to a power supply path between the first neutralizing circuit and the electrode. The first neutralizing circuit has a first ground relay that connects and disconnects the electrode and the ground via a voltage-drop resistance member, and the second neutralizing circuit has an isolation relay that connects and disconnects the first neutralizing circuit and the second neutralizing circuit, and a second ground relay that is connected to a power supply path between the isolation relay and the electrode and connects and disconnects the electrode and the ground side without going through a resistance member.

公开(公告)号：US11972923B2

公开(公告)日：2024-04-30

申请号：US17566904

申请日：2021-12-31

Applicant: FEI Company

Inventor： Christopher Thompson ,  Dustin Ellis ,  Adam Stokes ,  Ronald Kelley ,  Cedric Bouchet-Marquis

IPC: H01J37/305 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/3056 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and systems for creating attachments between a sample manipulator and a sample within a charged particle systems are disclosed herein. Methods include translating a sample manipulator so that it is proximate to a sample, and milling portions of the sample manipulator such that portions are removed. The portion of the sample manipulator proximate to the sample is composed of a high sputter yield material, and the high sputter yield material may be the material milled with the charged particle beam such that it is removed from the sample manipulator. According to the present disclosure, the portions of the sample manipulator are milled such that at least some of the removed high sputter yield material redeposits to form an attachment between the sample manipulator and the sample.

公开(公告)号：US11935729B2

公开(公告)日：2024-03-19

申请号：US17190178

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Hajime Tamura ,  Yasuharu Sasaki ,  Shin Yamaguchi ,  Tsuguto Sugawara ,  Katsuyuki Koizumi

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01J37/32642 ,  H02N13/00 ,  H01J2237/2007 ,  H01J2237/334

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

公开(公告)号：US11929278B2

公开(公告)日：2024-03-12

申请号：US17324495

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4583 ,  H01J37/32724 ,  H01J37/32091 ,  H01J37/32899 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

公开(公告)号：US11929266B2

公开(公告)日：2024-03-12

申请号：US17680943

申请日：2022-02-25

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Takashi Sakamoto

IPC: H01L21/00 ,  H01J37/05 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67103 ,  H01J37/05 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20235

Abstract: A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

公开(公告)号：US20240060864A1

公开(公告)日：2024-02-22

申请号：US18452782

申请日：2023-08-21

Applicant: Alliance for Sustainable Energy, LLC

Inventor： Nikita Susan Dutta FITZCHARLES ,  Rory Patrick ANDRYKOWSKI ,  Steven Scott ROBBINS ,  Katherine Leigh JUNGJOHANN

IPC: G01N1/42 ,  B01L3/00 ,  G01N27/416 ,  H01J37/20 ,  H01J37/26

CPC classification number: G01N1/42 ,  B01L3/508 ,  G01N27/4161 ,  H01J37/20 ,  H01J37/263 ,  B01L2300/0832 ,  H01J2237/2001 ,  H01J2237/2007

Abstract: Described herein are devices and methods for flash freezing samples while applying an in situ electrical current or bias. Advantageously, the present application is directed towards materials, such as batteries or electrochemical cells, where applying an electrical current or bias leads to dynamic changes to the structure and chemistry of constituent materials, which underpin device performance and degradation. By concurrently applying electrical current or bias and flash freezing the sample, transient structures in the anode, cathode, or electrolyte can be observed with a high degree of temporal resolution at an atomic scale.

公开(公告)号：US11908655B2

公开(公告)日：2024-02-20

申请号：US17080937

申请日：2020-10-27

Applicant: Gatan, Inc.

Inventor： Alexander Jozef Gubbens ,  John Andrew Hunt ,  Masoud Azimi ,  Radosav Pantelic ,  Ron Zolkowski ,  Chris Booth ,  Andrew Alan Abbott

IPC: H01J37/20 ,  G01N23/20025 ,  G01N1/42 ,  H01J37/26

CPC classification number: H01J37/20 ,  G01N23/20025 ,  G01N1/42 ,  H01J37/26 ,  H01J2237/0216 ,  H01J2237/2001 ,  H01J2237/204 ,  H01J2237/2005 ,  H01J2237/2007 ,  H01J2237/20207

Abstract: A workstation is described for mounting specimens into a cryotransfer holder at cryogenic temperature. The workstation allows rotation about the cryotransfer holder axis to improve access to the sample placement area on the holder and to facilitate easy removal and retrieval of the sample after imaging. The cryotransfer holder includes a cylindrical dewar configured to maintain a constant center of mass about the holder axis regardless of orientation of the dewar.