公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US09556521B1

公开(公告)日：2017-01-31

申请号：US14809985

申请日：2015-07-27

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/06 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US20150318142A1

公开(公告)日：2015-11-05

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US20070105355A1

公开(公告)日：2007-05-10

申请号：US11527594

申请日：2006-09-27

Applicant: Adrian Murrell ,  Peter Banks ,  Matthew Dobson ,  Peter Kindersley ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

Inventor： Adrian Murrell ,  Peter Banks ,  Matthew Dobson ,  Peter Kindersley ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC: H01L21/26

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/265 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764 ,  Y10S438/961

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

公开(公告)号：US20050098742A1

公开(公告)日：2005-05-12

申请号：US10762114

申请日：2004-01-21

Applicant: Peter Kellerman ,  Victor Benveniste

Inventor： Peter Kellerman ,  Victor Benveniste

IPC: C23C16/00 ,  H01J37/08 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/31708

Abstract: An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.

Abstract translation: 离子淋浴器包括可操作以在室内产生源气体离子的等离子体源，以及与腔室的顶部相关联的提取组件。 提取组件可操作以从腔室的顶部提取离子。 离子淋浴器还包括与室的顶部相关联的工件支撑结构，该工件支撑结构可操作以将具有朝向朝向提取组件定向的注入表面的工件固定以用于其植入。 本发明的离子淋浴器有利地促进了具有高氧分数的SIMOX处理和用于下一代处理的均匀束流。

公开(公告)号：US20180095201A1

公开(公告)日：2018-04-05

申请号：US15723851

申请日：2017-10-03

Applicant: Magic Leap, Inc.

Inventor： Mauro Melli ,  Christophe Peroz

IPC: G02B5/18 ,  H01J37/317 ,  H01J37/305 ,  G02B27/42

CPC classification number: G02B5/1857 ,  G02B6/124 ,  G02B6/136 ,  G02B27/0172 ,  G02B27/4205 ,  G02B27/4272 ,  G02B2006/12188 ,  G02B2027/0125 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/31708 ,  H01J2237/31711

Abstract: A method of fabricating non-uniform gratings includes implanting different densities of ions into corresponding areas of a substrate, patterning, e.g., by lithography, a resist layer on the substrate, etching the substrate with the patterned resist layer, and then removing the resist layer from the substrate, leaving the substrate with at least one grating having non-uniform characteristics associated with the different densities of ions implanted in the areas. The method can further include using the substrate having the grating as a mold to fabricate a corresponding grating having corresponding non-uniform characteristics, e.g., by nanoimprint lithography.

公开(公告)号：US09673114B1

公开(公告)日：2017-06-06

申请号：US14695767

申请日：2015-04-24

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/26 ,  H01J37/305 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

公开(公告)号：US09455116B2

公开(公告)日：2016-09-27

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US09158008B2

公开(公告)日：2015-10-13

申请号：US13600084

申请日：2012-08-30

Applicant: Lynn A. Boatner ,  John T. Mihalczo

Inventor： Lynn A. Boatner ,  John T. Mihalczo

IPC: C23C14/48 ,  B05D5/06 ,  B05D5/12 ,  G01T1/20 ,  G01T3/06

CPC classification number: G01T1/201 ,  C23C14/48 ,  G01T3/06 ,  H01J2237/31706 ,  H01J2237/31708

Abstract: Disclosed below are representative embodiments of methods, apparatus, and systems for detecting particles, such as radiation or charged particles. One exemplary embodiment disclosed herein is particle detector comprising an optical fiber with a first end and second end opposite the first end. The optical fiber of this embodiment further comprises a doped region at the first end and a non-doped region adjacent to the doped region. The doped region of the optical fiber is configured to scintillate upon interaction with a target particle, thereby generating one or more photons that propagate through the optical fiber and to the second end. Embodiments of the disclosed technology can be used in a variety of applications, including associated particle imaging and cold neutron scattering.

Abstract translation: 以下公开了用于检测诸如辐射或带电粒子的颗粒的方法，装置和系统的代表性实施例。 本文公开的一个示例性实施例是粒子检测器，其包括具有与第一端相对的第一端和第二端的光纤。 该实施例的光纤还包括在第一端处的掺杂区域和与掺杂区域相邻的非掺杂区域。 光纤的掺杂区域被配置为在与目标颗粒相互作用时闪烁，从而产生一个或多个通过光纤传播的光子和第二端。 所公开技术的实施例可以用于各种应用，包括相关的粒子成像和冷中子散射。

公开(公告)号：US20120318993A1

公开(公告)日：2012-12-20

申请号：US13600084

申请日：2012-08-30

Applicant: Lynn A. Boatner ,  John T. Mihalczo

Inventor： Lynn A. Boatner ,  John T. Mihalczo

IPC: G01T1/20 ,  C03B37/01

CPC classification number: G01T1/201 ,  C23C14/48 ,  G01T3/06 ,  H01J2237/31706 ,  H01J2237/31708

Abstract: Disclosed below are representative embodiments of methods, apparatus, and systems for detecting particles, such as radiation or charged particles. One exemplary embodiment disclosed herein is particle detector comprising an optical fiber with a first end and second end opposite the first end. The optical fiber of this embodiment further comprises a doped region at the first end and a non-doped region adjacent to the doped region. The doped region of the optical fiber is configured to scintillate upon interaction with a target particle, thereby generating one or more photons that propagate through the optical fiber and to the second end. Embodiments of the disclosed technology can be used in a variety of applications, including associated particle imaging and cold neutron scattering.

Abstract translation: 以下公开了用于检测诸如辐射或带电粒子的颗粒的方法，装置和系统的代表性实施例。 本文公开的一个示例性实施例是粒子检测器，其包括具有与第一端相对的第一端和第二端的光纤。 该实施例的光纤还包括在第一端处的掺杂区域和与掺杂区域相邻的非掺杂区域。 光纤的掺杂区域被配置为在与目标颗粒相互作用时闪烁，从而产生一个或多个通过光纤传播的光子和第二端。 所公开技术的实施例可以用于各种应用，包括相关的粒子成像和冷中子散射。