On-die termination of address and command signals

    公开(公告)号:US09721629B2

    公开(公告)日:2017-08-01

    申请号:US15394009

    申请日:2016-12-29

    Applicant: Rambus Inc.

    Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

    MEMORY COMPONENTS AND CONTROLLERS THAT CALIBRATE MULTIPHASE SYNCHRONOUS TIMING REFERENCES

    公开(公告)号:US20160343418A1

    公开(公告)日:2016-11-24

    申请号:US15228644

    申请日:2016-08-04

    Applicant: Rambus Inc.

    Abstract: A first timing reference signal and a second timing reference signal are sent to a memory device. The second timing reference signal has approximately a quadrature phase relationship with respect to the first timing reference signal. A plurality of serial data patterns are received from the memory device. The transitions of the first timing reference and the second timing reference determining when transitions occur between the bits of the plurality of data patterns. Timing indicators associated with when received transitions occur between the bits of the plurality of data patterns are received from the memory device. The timing indicators are each measured using a single sampler. Based on the timing indicators, a first duty cycle adjustment for the first timing reference signal, a second duty cycle adjustment for the second timing reference signal, and a quadrature phase adjustment are determined and applied.

    On-Die Termination of Address and Command Signals

    公开(公告)号:US20160293236A1

    公开(公告)日:2016-10-06

    申请号:US15081745

    申请日:2016-03-25

    Applicant: Rambus Inc.

    Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

    TIME MULTIPLEXING AT DIFFERENT RATES TO ACCESS DIFFERENT MEMORY TYPES
    196.
    发明申请
    TIME MULTIPLEXING AT DIFFERENT RATES TO ACCESS DIFFERENT MEMORY TYPES 有权
    以不同速率进行时间多路复用以访问不同的存储器类型

    公开(公告)号:US20160019171A1

    公开(公告)日:2016-01-21

    申请号:US14866911

    申请日:2015-09-26

    Applicant: Rambus Inc.

    Inventor: Ian Shaeffer

    Abstract: A memory controller accesses different types of memory devices running at different native rates through the use of a time division multiplexed bus. Data is transferred over the bus at one rate when accessing one type of memory device and at a different rate when accessing another type of memory device. In addition, the memory controller may provide control information (e.g., command and address information) to the different types of memory devices at different rates and, in some cases, time multiplex the control information on a shared bus.

    Abstract translation: 存储器控制器通过使用时分复用总线来访问以不同本机速率运行的不同类型的存储器件。 当访问一种类型的存储设备时,以一种速率通过总线传送数据,并且在访问另一种类型的存储设备时以不同的速率传输数据。 此外,存储器控制器可以以不同的速率向不同类型的存储器件提供控制信息(例如,命令和地址信息),并且在一些情况下,将共享总线上的控制信息进行时间复用。

    Memory Error Detection
    197.
    发明申请
    Memory Error Detection 有权
    内存错误检测

    公开(公告)号:US20160011933A1

    公开(公告)日:2016-01-14

    申请号:US14864500

    申请日:2015-09-24

    Applicant: Rambus Inc.

    Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation

    Abstract translation: 提供了用于检测和校正存储器系统中的地址错误的系统和方法。 在存储器系统中,存储器件基于通过地址总线发送的地址生成错误检测码,并将错误检测码发送到存储器控制器。 存储器控制器响应于错误检测码向存储器件发送错误指示。 错误指示使存储器件移除接收的地址并防止存储器操作

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