Abstract:
A method of routing a wireless network is provided. The method is performed by each of a group of nodes and includes: receiving a routing request signal; determining whether a node itself is a destination node, by referring to a traffic distribution table showing traffic throughput of the group of nodes and an intermediate-node weight table showing weights of intermediate nodes on all paths between the group of nodes and a source node, wherein a route path is selected by referring to the weights of intermediate nodes; and when it is determined that the node itself is the destination node transmitting a routing response signal to the source node that has transmitted the routing request signal, and receiving a packet from the source node, wherein the transmitting and receiving are performed by the determined destination node. By using the method, traffic in wireless network extreme communications can be distributed at intermediate nodes as well as at destination nodes. Therefore, all the networks can be effectively used in extreme circumstances.
Abstract:
Provided are semiconductor devices and methods of manufacturing the same. the device may include a semiconductor substrate, a first conductive pattern provided in the semiconductor substrate to have a first width at a surface level of the semiconductor substrate, a barrier pattern covering the first conductive pattern and having a second width substantially greater than the first width, a second conductive pattern partially covering the barrier pattern and having a third width substantially smaller than the second width, and an insulating pattern disposed on a sidewall of the second conductive pattern. The second width may be substantially equal to or less than to a sum of the third width and a width of the insulating pattern.
Abstract:
Disclosed is a hierarchical random access method for a wireless communication system having a significantly large cell. According to the present invention, a length of a preamble sequence and a length of a reference slot may be designed based on a terminal having greatest capacity of adjusting a timing error arrived at a base station, and a slot length may be designed to be an integer multiple of the length of the reference slot depending on a timing error correction capacity, thereby enabling terminals to use various slot lengths.
Abstract:
In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.
Abstract:
Disclosed is an interaction method between an automatic repeat request (ARQ) and a hybrid automatic repeat request (HARQ) in a system having a long roundtrip delay. A transmission window for the ARQ is operated using inner feedback information from the HARQ, and a waiting window is operated using ARQ status information.
Abstract:
Disclosed are an auto exposure system and a method thereof. The auto exposure system may check whether an exposure target value is correct using brightness information of an input image. When the exposure target value is not proper, the auto exposure system may readjust the exposure target value through analyzing the brightness information of the input image. Also, the auto exposure system may correct exposure of the input image based on an exposure correction value according to the adjusted exposure target value, thereby adjusting the exposure of the input image to be proper. Also, exposure information of the input image may be easily obtained from a final exposure target value.
Abstract:
Provided is a communication method of a mobile terminal in an orthogonal frequency division multiplexing (OFDM) based multi-beam satellite system reusing the same frequency band for all the beams, the method including: receiving location information of the mobile terminal from a satellite to determine a location of the mobile terminal within multiple beams; determining a subcarrier group for a communication with the satellite according to the location of the mobile terminal within the multiple beams; and communicating with the satellite using the subcarrier group for the communication with the satellite.
Abstract:
Disclosed are examples of an interworking system. In some embodiments, the interworking system includes a STUN server and an application layer gateway (ALG) server. The STUN server can be configured to provide binding information. The application layer gateway (ALG) server can include an IP masquerading performer, a STUN client performer, an address translator and a determiner.
Abstract:
Disclosed is a communication method of a satellite mobile communication system. The communication method of a satellite mobile communication system, includes: receiving system information indicating frame intervals in which first user equipments using a satellite radio interface in commonality with a terrestrial radio interface do not perform communications from a base station; accessing the base station in the rest frame intervals other than frame intervals in which the first user equipments do not perform communications, based on the system information; transmitting the system information from the base station to second user equipments using a satellite radio interface optimized for satellite environment; and accessing the base station in the rest frame intervals based on the system information received in the second user equipments.
Abstract:
A semiconductor apparatus having a through electrode, a semiconductor package, and a method of manufacturing the semiconductor package are provided. The method of includes preparing a substrate including a buried via, the buried via having a first surface at a first end, and the buried via extending from a first substrate surface of the substrate into the substrate; planarizing a second substrate surface of the substrate opposite the first substrate surface to form a through via by exposing a second via surface at a second end of the buried via opposite the first end; forming a conductive capping layer on the exposed second via surface of the through via; and recessing the second substrate surface so that at least a first portion of the through via extends beyond the second substrate surface.