公开(公告)号：US08564139B2

公开(公告)日：2013-10-22

申请号：US13610068

申请日：2012-09-11

申请人： Ho-Jin Lee ,  Pil-Kyu Kang ,  Seokho Kim ,  Byung Lyul Park ,  Kyu-Ha Lee ,  Hyunsoo Chung ,  Gilheyun Choi

发明人： Ho-Jin Lee ,  Pil-Kyu Kang ,  Seokho Kim ,  Byung Lyul Park ,  Kyu-Ha Lee ,  Hyunsoo Chung ,  Gilheyun Choi

IPC分类号： H01L23/48

CPC分类号： H01L23/3192 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05564 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2224/05552

摘要： Provided are semiconductor devices and methods of manufacturing the same. the device may include a semiconductor substrate, a first conductive pattern provided in the semiconductor substrate to have a first width at a surface level of the semiconductor substrate, a barrier pattern covering the first conductive pattern and having a second width substantially greater than the first width, a second conductive pattern partially covering the barrier pattern and having a third width substantially smaller than the second width, and an insulating pattern disposed on a sidewall of the second conductive pattern. The second width may be substantially equal to or less than to a sum of the third width and a width of the insulating pattern.

摘要翻译： 提供半导体器件及其制造方法。 所述器件可以包括半导体衬底，设置在所述半导体衬底中以在所述半导体衬底的表面电平处具有第一宽度的第一导电图案，覆盖所述第一导电图案并具有基本上大于所述第一宽度的第二宽度的阻挡图案 ，部分地覆盖所述阻挡图案并且具有基本上小于所述第二宽度的第三宽度的第二导电图案，以及设置在所述第二导电图案的侧壁上的绝缘图案。 第二宽度可以基本上等于或小于绝缘图案的第三宽度和宽度之和。

公开(公告)号：US20130134603A1

公开(公告)日：2013-05-30

申请号：US13610068

申请日：2012-09-11

申请人： Ho-Jin Lee ,  Pil-Kyu Kang ,  Seokho Kim ,  Byung Lyul Park ,  Kyu-Ha Lee ,  Hyunsoo Chung ,  Gilheyun Choi

发明人： Ho-Jin Lee ,  Pil-Kyu Kang ,  Seokho Kim ,  Byung Lyul Park ,  Kyu-Ha Lee ,  Hyunsoo Chung ,  Gilheyun Choi

IPC分类号： H01L23/48

CPC分类号： H01L23/3192 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05564 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2224/05552

摘要： Provided are semiconductor devices and methods of manufacturing the same. the device may include a semiconductor substrate, a first conductive pattern provided in the semiconductor substrate to have a first width at a surface level of the semiconductor substrate, a barrier pattern covering the first conductive pattern and having a second width substantially greater than the first width, a second conductive pattern partially covering the barrier pattern and having a third width substantially smaller than the second width, and an insulating pattern disposed on a sidewall of the second conductive pattern. The second width may be substantially equal to or less than to a sum of the third width and a width of the insulating pattern.

摘要翻译： 提供半导体器件及其制造方法。 所述器件可以包括半导体衬底，设置在所述半导体衬底中以在所述半导体衬底的表面电平处具有第一宽度的第一导电图案，覆盖所述第一导电图案并具有基本上大于所述第一宽度的第二宽度的阻挡图案 ，部分地覆盖所述阻挡图案并且具有基本上小于所述第二宽度的第三宽度的第二导电图案，以及设置在所述第二导电图案的侧壁上的绝缘图案。 第二宽度可以基本上等于或小于绝缘图案的第三宽度和宽度之和。

公开(公告)号：US09653430B2

公开(公告)日：2017-05-16

申请号：US14955124

申请日：2015-12-01

申请人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

发明人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L23/31 ,  H01L21/683 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L22/32 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03616 ,  H01L2224/0392 ,  H01L2224/04 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08146 ,  H01L2224/09181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14515 ,  H01L2224/16146 ,  H01L2224/73251 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80907 ,  H01L2224/92 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06596 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/08 ,  H01L2224/16 ,  H01L2924/00012 ,  H01L22/00 ,  H01L21/304 ,  H01L2221/68304 ,  H01L2221/68381 ,  H01L21/78

摘要： Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.

公开(公告)号：US20160155724A1

公开(公告)日：2016-06-02

申请号：US14955124

申请日：2015-12-01

申请人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

发明人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L22/32 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03616 ,  H01L2224/0392 ,  H01L2224/04 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08146 ,  H01L2224/09181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14515 ,  H01L2224/16146 ,  H01L2224/73251 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80907 ,  H01L2224/92 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06596 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/08 ,  H01L2224/16 ,  H01L2924/00012 ,  H01L22/00 ,  H01L21/304 ,  H01L2221/68304 ,  H01L2221/68381 ,  H01L21/78

摘要： Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.

摘要翻译： 提供具有堆叠结构的半导体器件及其制造方法。 半导体器件包括至少一个单块，其包括堆叠在其上的第一半导体芯片和第二半导体芯片。 第一和第二半导体芯片中的每一个包括半导体衬底，该半导体衬底包括通孔，半导体衬底的前表面上的电路层和设置在电路层中并且与通孔电连接的前衬垫 。 半导体基板的表面彼此面对。 电路层彼此直接接触，使得半导体芯片彼此结合。

公开(公告)号：US20100190333A1

公开(公告)日：2010-07-29

申请号：US12691780

申请日：2010-01-22

申请人： Myeong-Soon PARK ,  Eunchul Ahn ,  Hyunsoo Chung ,  Seokho Kim ,  Do-Yeon Choi ,  Jinho Chun

发明人： Myeong-Soon PARK ,  Eunchul Ahn ,  Hyunsoo Chung ,  Seokho Kim ,  Do-Yeon Choi ,  Jinho Chun

IPC分类号： H01L21/60

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13014 ,  H01L2224/13076 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A method of forming a connection terminal may include preparing a substrate, forming a first conductor of a tube shape having an opened upper portion on the substrate, forming a second conductor on the first conductor, and annealing the second conductor so that a portion of the second conductor extends in an internal space of the first conductor through the opened upper portion.

摘要翻译： 形成连接端子的方法可以包括：准备衬底，在衬底上形成具有开口上部的管状第一导体，在第一导体上形成第二导体，并使第二导体退火， 第二导体通过开口的上部在第一导体的内部空间中延伸。

公开(公告)号：US10694479B2

公开(公告)日：2020-06-23

申请号：US15914058

申请日：2018-03-07

申请人： Murali Regunathan ,  Yezdi Antia ,  Neal David Becker ,  Stanley Kay ,  Uday R. Bhaskar ,  Seokho Kim

发明人： Murali Regunathan ,  Yezdi Antia ,  Neal David Becker ,  Stanley Kay ,  Uday R. Bhaskar ,  Seokho Kim

IPC分类号： H04W16/28 ,  H04W72/04 ,  H04W56/00 ,  H04B7/06 ,  H04B7/185

摘要： A system and method for timing synchronization with a modified DVB-S2X waveform for a forward beam hopping satellite is described. The method includes: transmitting a channel including a plurality of beams per a Beam Hopping Time Plan (BHTP), wherein each beam includes a discontinuous signal including a superframe including timing markers and a Beam Hopping Forward Synchronization Pattern (BHFSP); receiving a synchronization information, without a loopback beam, for one of the plurality of beams; determining an adjustment period and an adjusted symbol rate for generation of terrestrial switching instants, based on the synchronization information, for a transmission of the plurality of beams such that at least a portion of a respective BHFSP of one of the beams aligns with one of satellite switching instants; and adjusting a timing and symbol rate of the transmission according to the adjustment period and the adjusted symbol rate, respectively.

公开(公告)号：US20230178345A1

公开(公告)日：2023-06-08

申请号：US18062543

申请日：2022-12-06

申请人： Kyoungran Kim ,  Hungsuk You ,  Joongha Lee ,  Seokho Kim ,  Hoechul Kim ,  Kwangjin Moon ,  Sohye Cho

发明人： Kyoungran Kim ,  Hungsuk You ,  Joongha Lee ,  Seokho Kim ,  Hoechul Kim ,  Kwangjin Moon ,  Sohye Cho

IPC分类号： H01J37/32 ,  H01L23/00 ,  G01N23/223 ,  G01N21/62

CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01L24/80 ,  H01L24/05 ,  G01N23/223 ,  G01N21/62 ,  H01J2237/0225 ,  H01L2224/80009 ,  H01L2224/80895 ,  H01L24/94 ,  H01L2224/94 ,  H01L2224/05647 ,  H01L2224/05571 ,  H01L24/08 ,  H01L2224/08145 ,  H10B80/00

摘要： A chamber cleaning method includes processing a wafer for a Cu-to-Cu bonding process using plasma in a chamber; and removing copper from the chamber. Removing copper includes forming copper oxide on an inner wall of the chamber by oxidizing copper in the chamber by a plasma treatment that uses a first gas, performing a first monitoring operation that monitors a copper contamination state in the chamber using an optical diagnostic method, removing the copper oxide by a plasma treatment that uses a second gas; and performing a second monitoring operation that monitors a copper contamination state in the chamber using the optical diagnostic method.

公开(公告)号：US08344967B2

公开(公告)日：2013-01-01

申请号：US12487705

申请日：2009-06-19

申请人： Seokho Kim ,  Hyungjae Kim ,  Donghyun Park

发明人： Seokho Kim ,  Hyungjae Kim ,  Donghyun Park

IPC分类号： G09G3/28

CPC分类号： G09G3/296 ,  G09G3/2965 ,  G09G2330/028

摘要： A plasma display apparatus is disclosed. The plasma display apparatus includes a plasma display panel that includes a scan electrode, a sustain electrode, and a data electrode; and a scan driver that supplies the scan electrode with a first driving voltage serving as a reference voltage, a second driving voltage supplied from a single voltage source, and a third driving voltage that has the same magnitude as that of the second driving voltage and has the opposite polarity of that of the second driving voltage.

摘要翻译： 公开了一种等离子体显示装置。 等离子体显示装置包括等离子体显示面板，其包括扫描电极，维持电极和数据电极; 以及扫描驱动器，其向扫描电极提供用作参考电压的第一驱动电压，从单个电压源提供的第二驱动电压和与第二驱动电压具有相同幅度的第三驱动电压，并具有 与第二驱动电压的极性相反。