公开(公告)号：US20010045610A1

公开(公告)日：2001-11-29

申请号：US09471273

申请日：1999-12-23

Inventor： HIROSHI TOUGE

IPC: H01L029/82

CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00801 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/053

Abstract: The micro-machined surface structure includes a substrate 1, a circuit 10 comprising an n-layer or a p-layer diffused after ion implantation of impurities onto the substrate, an oxide film 5 for protecting the circuit 10 and a nitride film 6 formed on the oxide film. A circuit connection portion 11 is electrically connected with the circuit 10 and a structural body comprising polysilicon is formed on the circuit connection portion 11 and on the nitride film 6 in which the nitride film is formed between the oxide film 5 and the circuit connection portion 11 on the substrate.

Abstract translation: 微加工表面结构包括基板1，包括在衬底上离子注入杂质之后扩散的n层或p层的电路10，用于保护电路10的氧化物膜5和形成在 氧化膜。 电路连接部分11与电路10电连接，并且在电路连接部分11和氮化膜6上形成包括多晶硅的结构体，其中在氧化物膜5和电路连接部分11之间形成氮化物膜 在基板上。

公开(公告)号：US6119520A

公开(公告)日：2000-09-19

申请号：US281755

申请日：1999-03-30

Applicant: James R. Woodruff

Inventor： James R. Woodruff

IPC: B81B3/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10

CPC classification number: B81B3/0081 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/097 ,  B81B2201/0235 ,  B81C2201/014 ,  B81C2201/019 ,  G01P2015/0814 ,  G01P2015/0828

Abstract: The method of the present invention includes forming a frame and a proof mass suspended from the frame by one or more flexures, and including within a thin active layer one or more vibratory force transducers suitably coupled to the proof mass for detecting a force applied to the proof mass. According to the present invention, an insulating layer, such as silicon oxide, is formed between the substrate and the active layer to insulate the active layer from the substrate. Providing a separate insulating layer between the substrate and active layer improves the electrical insulation between the proof mass and the transducers, which allows for effective operation over a wide range of temperatures.

Abstract translation: 本发明的方法包括通过一个或多个弯曲形成框架和悬挂在框架上的检验质量块，并且在薄的活性层内包括一个或多个适当地耦合到检测质量块的振动力传感器，用于检测施加到 防爆质量。 根据本发明，在衬底和有源层之间形成诸如氧化硅的绝缘层，以使有源层与衬底绝缘。 在衬底和有源层之间提供单独的绝缘层改善了校准质量块和换能器之间的电绝缘，这允许在宽的温度范围内有效地操作。

公开(公告)号：US5985164A

公开(公告)日：1999-11-16

申请号：US950952

申请日：1997-10-15

Applicant: Wen-Hua Chu ,  Mauro Ferrari

Inventor： Wen-Hua Chu ,  Mauro Ferrari

IPC: B01D39/20 ,  B01D67/00 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B81B1/00 ,  B81C1/00 ,  C23C16/01 ,  G03F7/00 ,  B32B31/00 ,  B01D71/04 ,  C19K13/00

CPC classification number: B81C1/00246 ,  B01D39/20 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B81B3/007 ,  C23C16/01 ,  G03F7/0015 ,  B01D2325/04 ,  B81B2201/10 ,  B81C2201/014 ,  B81C2201/032 ,  B81C2203/0728 ,  B81C2203/075

Abstract: Surface micromachining and bulk micromachining are employed for realizing a porous membrane with bulk support for a microparticle filter. The filter is manufactured by a process employing a thin film etch-stop, in which the bulk substrate is etched using a first etching process followed by etching of the etch stop and of material within pores of a filter layer using a second etching process. The filter is sufficiently sturdy to allow for easy handling. It may be used as a diffusion barrier and under high pressures. The disclosed fabrication method is simple, reliable, and integrated-circuit compatible, and thus amenable to mass production. Electronic circuitry may be integrated on the filter surface, as may be desired for several purposes, such as fluid characterization, filter self-cleaning, or charging of the filter surfaces. Methods are shown for the realization of biological containment capsules based on this microfilter.

Abstract translation: 采用表面微机械加工和体积微加工技术来实现具有大量支撑微孔过滤器的多孔膜。 该过滤器是通过使用薄膜蚀刻停止的工艺制造的，其中使用第一蚀刻工艺蚀刻大块衬底，然后使用第二蚀刻工艺蚀刻蚀刻停止层和过滤层的孔内的材料。 过滤器足够坚固以便于处理。 它可以用作扩散屏障并在高压下使用。 所公开的制造方法简单，可靠，并且集成电路兼容，因此适合批量生产。 电子电路可以集成在过滤器表面上，如可能需要多种目的，例如流体表征，过滤器自清洁或过滤表面的充电。 显示了基于该微型过滤器实现生物遏制胶囊的方法。

公开(公告)号：US5948981A

公开(公告)日：1999-09-07

申请号：US735299

申请日：1996-10-22

Applicant: James R. Woodruff

Inventor： James R. Woodruff

IPC: B81B3/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10

CPC classification number: B81B3/0081 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/097 ,  B81B2201/0235 ,  B81C2201/014 ,  B81C2201/019 ,  G01P2015/0814 ,  G01P2015/0828

Abstract: The apparatus of the present invention includes a substrate and a thin active layer each comprising a semiconducting material. The substrate has a frame and a proof mass suspended from the frame by one or more flexures, and the active layer includes one or more vibratory force transducers suitable coupled to the proof mass for detecting a force applied to the proof mass. According to the present invention, an insulating layer, such as silicon oxide, is formed between the substrate and the active layer to insulate the active layer from the substrate. Providing a separate insulating layer between the substrate and active layer improves the electrical insulation between the proof mass and the transducers, which allows for effective operation over a wide range of temperatures. The vibratory force transducers comprise first and second parallel beams, each beam having one or more fingers extending laterally outward from the beam and intermeshed with fingers projecting laterally inward towards the beam from an electrode positioned adjacent to the beam.

Abstract translation: 本发明的装置包括每个包括半导体材料的衬底和薄的有源层。 衬底具有通过一个或多个挠曲件从框架悬挂的框架和检验质量块，并且活性层包括一个或多个振动力传感器，该振动力传感器适合耦合到检测质量块，用于检测施加到检验质量块的力。 根据本发明，在衬底和有源层之间形成诸如氧化硅的绝缘层，以使有源层与衬底绝缘。 在衬底和有源层之间提供单独的绝缘层改善了校准质量块和换能器之间的电绝缘，这允许在宽的温度范围内有效地操作。 振动力传感器包括第一和第二平行光束，每个光束具有从光束横向向外延伸的一个或多个指状物，并且与从该光束相邻定位的电极横向向内朝着光束突出的指状物相互啮合。

公开(公告)号：US5798042A

公开(公告)日：1998-08-25

申请号：US663644

申请日：1996-06-14

Applicant: Wen-Hwa Chu ,  Mauro Ferrari

Inventor： Wen-Hwa Chu ,  Mauro Ferrari

IPC: A61K9/00 ,  A61K9/22 ,  A61K9/50 ,  A61K9/52 ,  B01D39/16 ,  B01D39/20 ,  B01D67/00 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B01J13/02 ,  B81B1/00 ,  B81C1/00 ,  C04B41/45 ,  C23C16/01 ,  G03F7/00 ,  B01D69/10

CPC classification number: G03F7/0015 ,  A61K9/0024 ,  A61K9/0097 ,  B01D39/1692 ,  B01D39/20 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D67/0083 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B01J13/02 ,  B81B3/007 ,  B81C1/00087 ,  B81C1/00246 ,  C04B41/4582 ,  C23C16/01 ,  G03F7/00 ,  B01D2323/08 ,  B01D2323/10 ,  B01D2325/02 ,  B01D2325/04 ,  B81B2201/10 ,  B81C2201/014 ,  B81C2201/032 ,  B81C2203/0728 ,  B81C2203/075

Abstract: Microfabricated filters utilizing a bulk substrate structure and a thin film structure and a method for constructing such filters. The pores of the filters are defined by spaces between the bulk substrate structure and the thin film structure and are of substantially uniform width, length and distribution. The width of the pores is defined by the thickness of a sacrificial layer and therefore may be smaller than the limit of resolution obtainable with photolithography. The filters provide enhanced mechanical strength, chemical inertness, biological compatibility, and throughput. The filters are constructed using relatively simple fabrication techniques. Also, microfabricated containment wells and capsules constructed with such filters for the immunological isolation of cell transplants and a method for constructing such containment wells and capsules. The pores of the wells and capsules are large enough to let a desired biologically-active molecular product through, while blocking the passage of all larger immunological molecules. The containment wells and capsules provide enhanced biological compatibility and useful life.

公开(公告)号：US12020942B2

公开(公告)日：2024-06-25

申请号：US17728524

申请日：2022-04-25

Applicant: ULVAC, Inc.

Inventor： Taichi Suzuki ,  Yasuhiro Morikawa ,  Kenta Doi ,  Toshiyuki Nakamura

IPC: H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

Abstract: An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

公开(公告)号：US11946822B2

公开(公告)日：2024-04-02

申请号：US17290140

申请日：2019-10-16

Applicant: Sciosense B.V.

Inventor： Alessandro Faes ,  Jörg Siegert ,  Willem Frederik Adrianus Besling ,  Remco Henricus Wilhelmus Pijnenburg

IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01L9/0073 ,  B81B3/0021 ,  B81C1/00595 ,  G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0109 ,  B81C2201/0133 ,  B81C2201/014

Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.

公开(公告)号：US11878906B2

公开(公告)日：2024-01-23

申请号：US17937123

申请日：2022-09-30

Applicant: Sciosense B.V.

Inventor： Kailash Vijayakumar ,  Remco Henricus Wilhelmus Pijnenburg ,  Willem Frederik Adrianus Besling ,  Sophie Guillemin ,  Jörg Siegert

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81C1/00595 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/014 ,  B81C2201/0132 ,  B81C2201/053

Abstract: In an embodiment, an integrated MEMS transducer device includes a substrate body having a first electrode on a substrate, an etch stop layer located on a surface of the substrate, a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode, an anchor structure with anchors connecting the MEMS diaphragm to the substrate body and a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer including a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and wherein the first and the second material are different materials.

公开(公告)号：US20190092631A1

公开(公告)日：2019-03-28

申请号：US16131455

申请日：2018-09-14

Applicant: Robert Bosch GmbH

Inventor： Sebastien Loiseau ,  Arnim Hoechst ,  Bernhard Gehl ,  Eugene Moliere Tanguep Njiokep ,  Sandra Altmannshofer

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81C1/00158 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/056

Abstract: A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

公开(公告)号：US20180202807A1

公开(公告)日：2018-07-19

申请号：US15867433

申请日：2018-01-10

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Ricardo Zamora

IPC: G01C19/5712 ,  G01P15/125 ,  G01P15/08 ,  G01L9/12 ,  B81C1/00

CPC classification number: G01C19/5712 ,  B81C1/00182 ,  B81C1/00357 ,  B81C2201/014 ,  B81C2201/019 ,  G01L9/0005 ,  G01L9/12 ,  G01P15/0802 ,  G01P15/125

Abstract: A micromechanical sensor includes a base substrate, a cap substrate, and a MEMS substrate that is connected to each of the base and cap substrates by respective metallic bond connections and that includes a mechanical functional layer including movable MEMS elements, an electrode device for acquiring an indication of a movement of the MEMS elements and fashioned by layer deposition, and a sacrificial layer that is lower than the mechanical function layer, is fashioned by layer deposition, and is omitted in a region underneath the movable MEMS elements.