公开(公告)号：US20100040859A1

公开(公告)日：2010-02-18

申请号：US12289816

申请日：2008-11-05

Applicant: Chia-Hua Chang ,  Chin-Sheng Yang ,  Ching-Hua Chiu ,  Pei-Chen Yu ,  Hao-Chung Kuo

Inventor： Chia-Hua Chang ,  Chin-Sheng Yang ,  Ching-Hua Chiu ,  Pei-Chen Yu ,  Hao-Chung Kuo

IPC: B32B3/26 ,  C23C14/30 ,  C23C14/34

CPC classification number: C23C14/226 ,  C23C14/086 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/249953 ,  Y10T428/249978

Abstract: The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.

Abstract translation: 本发明公开了一种通过斜角沉积的透明导电纳米结构薄膜及其制造方法。 利用电子束系统来蒸发目标源。 蒸发衬底设置在多个可调节的样品台上。 提供多个气体控制阀和热源来控制处理室内的气体流量和温度。 在蒸发后进行退火处理以改善薄膜结构和光电子性能。

公开(公告)号：US20080305568A1

公开(公告)日：2008-12-11

申请号：US11984247

申请日：2007-11-15

Applicant: Hung-Wen Huang ,  Tien-Chang Lu ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Shing-Chung Wang

Inventor： Hung-Wen Huang ,  Tien-Chang Lu ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC: H01L33/00

CPC classification number: H01L33/08 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/40

Abstract: Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.

Abstract translation: 提供了具有纳米棒状结构的发光二极管（LED）的方法。 LED采用纳米棒随后通过蚀刻方法和PEC方法沿纵向方向形成。 此外，将多个纳米棒排列成阵列，以便提供比常规LED具有更大亮度和更高发光效率的LED。

公开(公告)号：US08519538B2

公开(公告)日：2013-08-27

申请号：US12768911

申请日：2010-04-28

Applicant: Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Troy Wu

Inventor： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Troy Wu

IPC: H01L29/40

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/06 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/06182 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The present disclosure provides methods for forming semiconductor devices with laser-etched vias and apparatus including the same. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside and a backside, and providing a layer above the frontside of the substrate, the layer having a different composition from the substrate. The method further includes controlling a laser power and a laser pulse number to laser etch an opening through the layer and at least a portion of the frontside of the substrate, filling the opening with a conductive material to form a via, removing a portion of the backside of the substrate to expose the via, and electrically coupling a first element to a second element with the via. A semiconductor device fabricated by such a method is also disclosed.

Abstract translation: 本公开提供了用激光蚀刻通孔形成半导体器件的方法和包括该通孔的设备。 在一个实施例中，制造半导体器件的方法包括提供具有前侧和背面的衬底，并且在衬底的前侧提供一层，该层与衬底具有不同的组成。 该方法还包括控制激光功率和激光脉冲数以激光蚀刻穿过该层的基底的开口和至少部分基底的前侧，用导电材料填充开口以形成通孔， 衬底的背面以露出通孔，并且使第一元件与通孔电耦合到第二元件。 还公开了通过这种方法制造的半导体器件。

公开(公告)号：US08476659B2

公开(公告)日：2013-07-02

申请号：US12837227

申请日：2010-07-15

Applicant: Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

Inventor： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

Abstract: The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

Abstract translation: 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

公开(公告)号：US08308614B2

公开(公告)日：2012-11-13

申请号：US12753848

申请日：2010-04-02

Applicant: Ching-Hua Chiu ,  Li-Wei Chou

Inventor： Ching-Hua Chiu ,  Li-Wei Chou

IPC: A63B71/00

CPC classification number: A61H1/0274

Abstract: A rehabilitation device for arms has an operating module, a control module and an inductive module. The operating module has a base, a body and multiple operating segments. The operating segments are connected to the body and each has a lever, a resisting panel and a resisting device. The control module is connected to the operating module and has a switch, a microcomputer, a resistance controller, an import interface, an export interface and a monitor. The resisting control device is electrically connected to the microcomputer and the operating segments. The inductive module is electrically connected to the operating module and the control module and has an inductive segment and a counter segment. The inductive segment is electrically connected to the microcomputer and has multiple pressure sensors. The counter segment is electrically connected to the inductive segment and the microcomputer and has multiple photoelectric sensors.

Abstract translation: 武器康复装置具有操作模块，控制模块和感应模块。 操作模块具有基座，主体和多个操作段。 操作部分连接到主体，并且每个具有杠杆，阻力板和抵抗装置。 控制模块连接到操作模块，并具有开关，微型计算机，电阻控制器，导入接口，出口接口和监视器。 电阻控制装置电连接到微型计算机和操作段。 电感模块电连接到操作模块和控制模块，并具有电感段和计数器段。 感应段电连接到微型计算机上并具有多个压力传感器。 计数器段电连接到电感段和微型计算机，并具有多个光电传感器。

公开(公告)号：US20110266674A1

公开(公告)日：2011-11-03

申请号：US12768911

申请日：2010-04-28

Applicant: Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Troy Wu

Inventor： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Troy Wu

IPC: H01L23/48 ,  H01L21/283 ,  H01L21/441

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/06 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/06182 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The present disclosure provides methods for forming semiconductor devices with laser-etched vias and apparatus including the same. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside and a backside, and providing a layer above the frontside of the substrate, the layer having a different composition from the substrate. The method further includes controlling a laser power and a laser pulse number to laser etch an opening through the layer and at least a portion of the frontside of the substrate, filling the opening with a conductive material to form a via, removing a portion of the backside of the substrate to expose the via, and electrically coupling a first element to a second element with the via. A semiconductor device fabricated by such a method is also disclosed.

Abstract translation: 本公开提供了用激光蚀刻通孔形成半导体器件的方法和包括该通孔的设备。 在一个实施例中，制造半导体器件的方法包括提供具有前侧和背面的衬底，并且在衬底的前侧提供一层，该层与衬底具有不同的组成。 该方法还包括控制激光功率和激光脉冲数以激光蚀刻穿过该层的基底的开口和至少一部分基底的前端，用导电材料填充开口以形成通孔，去除部分 衬底的背面以露出通孔，并且使第一元件与通孔电耦合到第二元件。 还公开了通过这种方法制造的半导体器件。

公开(公告)号：US20110172578A1

公开(公告)日：2011-07-14

申请号：US12974338

申请日：2010-12-21

Applicant: CHING-HUA CHIU ,  LI-WEI CHOU

Inventor： CHING-HUA CHIU ,  LI-WEI CHOU

IPC: A61F5/00

CPC classification number: A61F5/0127

Abstract: The present invention relates to a plantar fasciitis rehabilitation controlling device. It mainly comprises a securing portion, a rotatable portion, a torque pivoting portion, a pulling portion, and a controller. The securing portion and the rotatable portion are provided for securing a user's shank and foot. This torque pivoting portion can create a torque causing the rotatable portion moving back. The pulling portion has a controller so as to pull the rotatable portion to rotate between a first angle and a second angle so that it can reduce possibility of the plantar fasciitis and ease pain of the plantar fasciitis. Hence, this invention can achieve an active rehabilitation exercise. The belt's pulling interval time can be adjusted. It has a safety switch to ensure its product safety. It is convenient that the user can use a wireless device to operate this system. In addition, the user can be informed about current condition via an audio device.

Abstract translation: 本发明涉及一种足底筋膜炎康复控制装置。 它主要包括固定部分，可旋转部分，转矩枢转部分，牵引部分和控制器。 固定部分和可旋转部分被设置用于固定使用者的柄和脚。 该扭矩枢转部分可以产生使可旋转部分向后移动的扭矩。 拉动部分具有控制器，以便拉动可旋转部分在第一角度和第二角度之间旋转，使得其可以降低足底筋膜炎的可能性并且缓解足底筋膜炎的疼痛。 因此，本发明可以实现积极的康复锻炼。 皮带的牵引间隔时间可以调整。 它有一个安全开关，以确保其产品安全。 用户可以方便地使用无线设备来操作该系统。 此外，可以通过音频设备通知用户当前状况。

公开(公告)号：US08546165B2

公开(公告)日：2013-10-01

申请号：US13227905

申请日：2011-09-08

Applicant: Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

Inventor： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC: H01L21/00 ,  H01L29/20 ,  H01L33/32

CPC classification number: H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

Abstract: A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

Abstract translation: 用于生长III-V族半导体结构的种子层嵌入在载体衬底上的电介质材料中。 在III-V族半导体结构生长之后，通过湿蚀刻去除介电材料以分离载体衬底。 III-V族半导体结构包括至少100微米的厚氮化镓层或发光结构。

公开(公告)号：US20130140592A1

公开(公告)日：2013-06-06

申请号：US13308784

申请日：2011-12-01

Applicant: Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

Inventor： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC: H01L33/22 ,  H01L33/36

CPC classification number: H01L33/0095 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.

Abstract translation: 公开了一种发光二极管结构及其制造方法。 在一个示例中，发光二极管结构包括具有大于或等于约250μm的厚度的晶体衬底，其中所述晶体衬底具有第一粗糙表面和第二粗糙表面，所述第二粗糙表面与所述第一粗糙表面相对， 粗糙表面; 设置在所述第一粗糙表面上的多个外延层，所述多个外延层被配置为发光二极管; 以及另一衬底，其结合到所述晶体衬底，使得所述多个外延层设置在所述另一衬底和所述结晶衬底的所述第一粗糙表面之间。

公开(公告)号：US20130095581A1

公开(公告)日：2013-04-18

申请号：US13276108

申请日：2011-10-18

Applicant: Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

Inventor： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC: H01L21/50 ,  H01L33/48

CPC classification number: H01L33/0095 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2924/00

Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

Abstract translation: 公开了用于接合，切割和形成LED管芯的LED管芯和方法。 在一个示例中，该方法包括形成LED晶片，其中LED晶片包括衬底和设置在衬底上的多个外延层，其中多个外延层被配置为形成LED; 将LED晶片连接到基板以形成LED对; 在接合之后，对LED对进行切割，其中，切割包括同时切割LED晶片和基板，从而形成LED管芯。