-
公开(公告)号：US08658468B2
公开(公告)日：2014-02-25
申请号：US13570986
申请日：2012-08-09
IPC分类号： H01L21/00
CPC分类号： H01L24/96 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/76879 , H01L23/3128 , H01L24/18 , H01L24/19 , H01L24/97 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/2919 , H01L2224/83856 , H01L2224/92144 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2224/82 , H01L2924/0665 , H01L2924/00
摘要： A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.
摘要翻译： 公开了一种制造半导体芯片模块和半导体芯片封装的方法。 一个实施例提供第一层，第二层和基层。 第一层设置在基层上，第二层设置在第一层上。 多个半导体芯片被施加在第二层上方，并且具有施加的半导体芯片的第二层与第一层分离。
-
公开(公告)号：US20120319304A1
公开(公告)日：2012-12-20
申请号：US13595049
申请日：2012-08-27
申请人： Klaus Pressel , Gottfried Beer
发明人： Klaus Pressel , Gottfried Beer
CPC分类号： G01P1/023 , B81B7/02 , B81B2207/092 , B81B2207/095 , B81C1/0023 , B81C2203/0154 , G01L9/0042 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/5384 , H01L23/5389 , H01L24/96 , H01L24/97 , H01L25/16 , H01L25/50 , H01L2223/6677 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2224/76155 , H01L2224/82039 , H01L2224/97 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15174 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H04R1/04 , H04R2201/003 , H01L2224/82 , H01L2224/29099 , H01L2924/00
摘要： A semiconductor device and manufacturing method. One embodiment provides a semiconductor chip. An encapsulating material covers the semiconductor chip. A metal layer is over the semiconductor chip and the encapsulating material. At least one of a voltage generating unit and a display unit are rigidly attached to at least one of the encapsulating material and the metal layer.
摘要翻译： 半导体器件及其制造方法。 一个实施例提供了半导体芯片。 封装材料覆盖半导体芯片。 金属层在半导体芯片和封装材料之上。 电压产生单元和显示单元中的至少一个刚性地附接到至少一个封装材料和金属层。
-
公开(公告)号：US08334202B2
公开(公告)日：2012-12-18
申请号：US12611609
申请日：2009-11-03
申请人： Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
发明人： Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
IPC分类号： H01L23/48
CPC分类号： H01L23/5389 , H01L21/486 , H01L21/76873 , H01L21/76879 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/82 , H01L24/97 , H01L2221/1089 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1461 , H01L2924/181 , H01L2224/82 , H01L2924/00
摘要： A method for fabricating a device includes providing a substrate including at least one contact and applying a dielectric layer over the substrate. The method includes applying a first seed layer over the dielectric layer, applying an inert layer over the seed layer, and structuring the inert layer, the first seed layer, and the dielectric layer to expose at least a portion of the contact. The method includes applying a second seed layer over exposed portions of the structured dielectric layer and the contact such that the second seed layer makes electrical contact with the structured first seed layer. The method includes electroplating a metal on the second seed layer.
摘要翻译： 一种用于制造器件的方法包括提供包括至少一个接触的衬底并在衬底上施加电介质层。 该方法包括在电介质层上施加第一种子层，在种子层上施加惰性层，以及构造惰性层，第一种子层和电介质层以暴露至少一部分接触。 该方法包括在结构化介电层和触点的暴露部分上施加第二种子层，使得第二籽晶层与结构化的第一籽晶层电接触。 该方法包括在第二种子层上电镀金属。
-
公开(公告)号：US08258624B2
公开(公告)日：2012-09-04
申请号：US11837211
申请日：2007-08-10
CPC分类号： H01L24/96 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/76879 , H01L23/3128 , H01L24/18 , H01L24/19 , H01L24/97 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/2919 , H01L2224/83856 , H01L2224/92144 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2224/82 , H01L2924/0665 , H01L2924/00
摘要： A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.
-
25.发明授权公开(公告)号：US08212344B2
公开(公告)日：2012-07-03
申请号：US12891288
申请日：2010-09-27
申请人： Gottfried Beer , Horst Theuss
发明人： Gottfried Beer , Horst Theuss
IPC分类号： H01L23/02
CPC分类号： B81C1/00333 , H01L23/293 , H01L23/3171 , H01L2224/0401 , H01L2224/05572 , H01L2224/13022 , H01L2224/131 , H01L2224/32225 , H01L2224/32265 , H01L2224/83193 , H01L2224/8385 , H01L2224/9202 , H01L2224/94 , H01L2924/01014 , H01L2224/83 , H01L2224/03 , H01L2924/014 , H01L2924/00014 , H01L2224/11
摘要： One aspect of the invention relates to a semiconductor component with cavity structure and a method for producing the same. The semiconductor component has an active semiconductor chip with the microelectromechanical structure and a wiring structure on its top side. The microelectromechanical structure is surrounded by walls of at least one cavity. A covering, which covers the cavity, is arranged on the walls. The walls have a photolithographically patterned polymer. The covering has a layer with a polymer of identical type. In one case, the molecular chains of the polymer of the walls are crosslinked with the molecular chains of the polymer layer of the covering layer to form a dimensionally stable cavity housing.
摘要翻译： 本发明的一个方面涉及具有腔结构的半导体部件及其制造方法。 半导体部件具有微机电结构的有源半导体芯片及其顶侧的布线结构。 微机电结构由至少一个空腔的壁包围。 覆盖空腔的覆盖物布置在墙壁上。 墙壁具有光刻图案的聚合物。 覆盖物具有具有相同类型的聚合物的层。 在一种情况下，壁的聚合物的分子链与覆盖层的聚合物层的分子链交联以形成尺寸稳定的腔体。
-
公开(公告)号：US08119452B2
公开(公告)日：2012-02-21
申请号：US12353432
申请日：2009-01-14
IPC分类号： H01L21/00
CPC分类号： H01L21/56 , H01L21/561 , H01L23/3121 , H01L24/97 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： One method includes fabricating a semiconductor device including providing a dielectric layer. At least one semiconductor chip is provided defining a first surface including contact elements and a second surface opposite to the first surface. The semiconductor chip is placed onto the dielectric layer with the first surface facing the dielectric layer. An encapsulant material is applied over the second surface of the semiconductor chip in a reel-to-reel process.
摘要翻译： 一种方法包括制造包括提供介电层的半导体器件。 提供至少一个半导体芯片，其限定包括接触元件的第一表面和与第一表面相对的第二表面。 半导体芯片被放置在电介质层上，第一表面面向电介质层。 密封剂材料以卷到盘的方式施加在半导体芯片的第二表面上。
-
公开(公告)号：US20110210450A1
公开(公告)日：2011-09-01
申请号：US13102452
申请日：2011-05-06
申请人： Horst Theuss , Gottfried Beer
发明人： Horst Theuss , Gottfried Beer
IPC分类号： H01L23/48
CPC分类号： H01L21/568 , B81B7/007 , B81C2203/0109 , B81C2203/0154 , H01L21/561 , H01L23/3128 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16 , H01L2224/20 , H01L2224/24137 , H01L2224/97 , H01L2924/01005 , H01L2924/01033 , H01L2924/01078 , H01L2924/014 , H01L2924/12041 , H01L2924/1461 , H01L2924/181 , H01L2224/82 , H01L2924/00
摘要： A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
摘要翻译： 公开了一种包括芯片的装置，该芯片保持在铸造化合物中并且布置有中空结构。
-
公开(公告)号：US07858440B2
公开(公告)日：2010-12-28
申请号：US11859346
申请日：2007-09-21
申请人： Klaus Pressel , Gottfried Beer
发明人： Klaus Pressel , Gottfried Beer
CPC分类号： H01L25/50 , B81C1/0023 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L24/19 , H01L24/82 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L2224/04105 , H01L2224/05571 , H01L2224/05573 , H01L2224/12105 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/24101 , H01L2224/73253 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2224/97 , H01L2225/06527 , H01L2225/06548 , H01L2225/06582 , H01L2225/06596 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/3511 , H01L2924/3512 , H01L2224/81 , H01L2224/82 , H01L2924/00 , H01L2224/05599
摘要： Stacked semiconductor chips are disclosed. One embodiment provides an array of first semiconductor chips, covering the array of the first semiconductor chips with a mold material, and placing an array of second semiconductor chips over the array of the first semiconductor chips. The thicknesses of the second semiconductor chips is reduced. The array of the first semiconductor chips are singulated by dividing the mold material.
摘要翻译： 公开了堆叠的半导体芯片。 一个实施例提供了利用模具材料覆盖第一半导体芯片的阵列的第一半导体芯片的阵列，以及将第二半导体芯片的阵列放置在第一半导体芯片的阵列上。 第二半导体芯片的厚度减小。 通过分割模具材料来分割第一半导体芯片的阵列。
-
29.发明授权Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof 有权包括用于塑料外壳中的微波工程的组件的半导体模块及其制造方法公开(公告)号：US07692588B2
公开(公告)日：2010-04-06
申请号：US11421684
申请日：2006-06-01
CPC分类号： H01L23/66 , G01S7/032 , G01S19/36 , H01L21/568 , H01L21/6835 , H01L23/552 , H01L24/19 , H01L24/24 , H01L24/48 , H01L24/82 , H01L24/96 , H01L2223/6627 , H01L2223/6677 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/2402 , H01L2224/24137 , H01L2224/24226 , H01L2224/48091 , H01L2224/73253 , H01L2224/73267 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/1903 , H01L2924/19105 , H01L2924/19107 , H01L2924/3025 , H01Q1/2283 , H01Q1/44 , H01Q9/0407 , H01Q9/0457 , H01Q19/00 , H01Q21/0087 , H01Q23/00 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor module (1) has components (6) for microwave engineering in a plastic casing (7). The semiconductor module (1) has a principal surface (8) with an upper side (9) of a plastic package molding compound (10) and at least one active upper side (11) of a semiconductor chip (12). Disposed on the principal surface (8) is a multilayered conductor track structure (13) which alternately comprises structured metal layers (14, 15) and structured insulation layers (16, 17), where at least one of the insulation layers (16, 17) and/or the plastic package molding compound (10) has at least one microwave insulation region.
摘要翻译： 半导体模块（1）在塑料外壳（7）中具有用于微波工程的部件（6）。 半导体模块（1）具有主表面（8），其具有塑料封装模制化合物（10）的上侧（9）和半导体芯片（12）的至少一个有源上侧面（11）。 设置在主表面（8）上的是多层导体轨道结构（13），其交替地包括结构化金属层（14,15）和结构化绝缘层（16,17），其中至少一个绝缘层（16,17） ）和/或塑料包装模塑料（10）具有至少一个微波绝缘区域。
-
公开(公告)号：US20100078771A1
公开(公告)日：2010-04-01
申请号：US12242521
申请日：2008-09-30
申请人： Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Oliver Nagy
发明人： Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Oliver Nagy
IPC分类号： H01L23/552 , H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L23/552 , H01L23/585 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, the system on a chip includes an RF component disposed on a first part of a substrate, a semiconductor component disposed on a second part of the substrate, the semiconductor component and the RF component sharing a common boundary. The system on chip further includes through substrate conductors disposed in the substrate, the through substrate conductors coupled to a ground potential node, the through substrate conductors disposed around the RF component forming a fence around the RF circuit.
摘要翻译： 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中，芯片上的系统包括设置在基板的第一部分上的RF部件，设置在基板的第二部分上的半导体部件，共享公共边界的半导体部件和RF部件。 芯片上的系统还包括通过设置在基板中的基板导体，连接到地电位节点的贯穿基板导体，围绕RF元件设置的贯穿基板导体，围绕RF电路形成围栏。
-
-
-
-
-
-
-
-
-
搜索结果
100 条记录 (耗时 0.025 秒)
