公开(公告)号：US10107625B2

公开(公告)日：2018-10-23

申请号：US15442488

申请日：2017-02-24

Applicant: mCube Inc.

Inventor： Sanjay Bhandari ,  Ali J. Rastegar ,  Sudheer S. Sridharamurthy

IPC: G01P3/00 ,  G01C19/5712 ,  B81B7/02 ,  B81B7/00

Abstract: A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.

公开(公告)号：US10036635B2

公开(公告)日：2018-07-31

申请号：US14163789

申请日：2014-01-24

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC: B81B3/00 ,  G01C19/574

CPC classification number: G01C19/574

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

公开(公告)号：US09975759B2

公开(公告)日：2018-05-22

申请号：US15647107

申请日：2017-07-11

Applicant: mCube, Inc.

Inventor： Chien Chen Lee ,  Tzu Feng Chang

IPC: H01L29/66 ,  B81B7/00 ,  B81C1/00 ,  G01P15/08 ,  G01R33/02 ,  G01C19/5783 ,  G01L1/00 ,  B81B3/00 ,  G01L9/00 ,  G01C19/5719

CPC classification number: B81B7/0074 ,  B81B3/0035 ,  B81B3/0062 ,  B81B3/0072 ,  B81B7/0032 ,  B81B7/0045 ,  B81B7/0048 ,  B81B7/0051 ,  B81B7/0054 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/0023 ,  B81C1/00261 ,  B81C1/00269 ,  B81C2203/0792 ,  G01C19/5719 ,  G01C19/5783 ,  G01L1/00 ,  G01L9/0042 ,  G01L19/0069 ,  G01L19/147 ,  G01P15/0802 ,  G01R33/02 ,  H04R2201/003

Abstract: A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

公开(公告)号：US20170248628A1

公开(公告)日：2017-08-31

申请号：US15444162

申请日：2017-02-27

Applicant: mCube, Inc.

Inventor： Sanjay BHANDARI ,  Ken WANG ,  Ben LEE

IPC: G01P15/08 ,  B81B7/00

CPC classification number: G01P15/08 ,  B81B7/0074 ,  B81B7/0087 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2201/047 ,  B81B2207/012 ,  G01P15/0802 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.

公开(公告)号：US20170167875A1

公开(公告)日：2017-06-15

申请号：US15442488

申请日：2017-02-24

Applicant: mCube Inc.

Inventor： SANJAY BHANDARI ,  Ali J. Rastegar ,  Sudheer S. Sridharamurthy

IPC: G01C19/5712 ,  B81B7/00 ,  B81B7/02

CPC classification number: G01C19/5712 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/0242 ,  G01C19/5776

Abstract: A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.

公开(公告)号：US20170082438A1

公开(公告)日：2017-03-23

申请号：US15365851

申请日：2016-11-30

Applicant: mCube Inc.

Inventor： ALI J. RASTEGAR ,  SANJAY BHANDARI

IPC: G01C19/5776

CPC classification number: G01C19/5776 ,  G01C19/5712 ,  G01C19/5783

Abstract: An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

公开(公告)号：US20160259364A1

公开(公告)日：2016-09-08

申请号：US15157354

申请日：2016-05-17

Applicant: mCube Inc.

Inventor： Andy MILOTA ,  Jobe PRICE

IPC: G06F1/14 ,  H04W52/02 ,  H04W56/00 ,  G06F1/12

CPC classification number: G06F1/12 ,  G06F1/14 ,  H04W52/029 ,  H04W56/001 ,  Y02D70/00 ,  Y02D70/122 ,  Y02D70/1246 ,  Y02D70/142 ,  Y02D70/144 ,  Y02D70/146 ,  Y02D70/162 ,  Y02D70/164 ,  Y02D70/166

Abstract: A method is provided for time synchronization in a MEMS (MicroElectroMecahnical system) based system having a MEMS processor and a plurality of MEMS devices. In a specific embodiment, the method includes, in the MEMS processor, transmitting a synchronization signal to the plurality of MEMS devices and saving a local time upon transmitting the synchronization signal. The MEMS processor also receives sampled data and time information from the plurality of MEMS devices, when the data and information become available. The method also includes, in one or more of the MEMS devices, receiving the synchronization signal from the MEMS processor and storing a local time upon receiving the synchronization signal. The MEMS device also performs a sensing operation and stores sampled sense data and sense time information.

Abstract translation: 在具有MEMS处理器和多个MEMS器件的基于MEMS（MicroElectroMecahnical系统）的系统中提供了一种用于时间同步的方法。 在具体实施例中，该方法包括在MEMS处理器中向多个MEMS器件发送同步信号，并且在发送同步信号时节省本地时间。 当数据和信息变得可用时，MEMS处理器还从多个MEMS装置接收采样数据和时间信息。 该方法还包括在一个或多个MEMS器件中，从MEMS处理器接收同步信号并且在接收到同步信号时存储本地时间。 MEMS器件还执行感测操作并存储采样的感测数据和感测时间信息。

公开(公告)号：US09377487B2

公开(公告)日：2016-06-28

申请号：US13922539

申请日：2013-06-20

Applicant: mCube Inc.

Inventor： Daniel N. Koury, Jr. ,  Sudheer Sridharamurthy

IPC: H01G7/00 ,  G01R3/00 ,  G01P15/125 ,  B81B3/00 ,  G01C19/5783 ,  G01P15/08

CPC classification number: G01R3/00 ,  B81B3/0072 ,  B81B2203/0163 ,  B81B2203/0307 ,  G01C19/5783 ,  G01P15/125 ,  G01P2015/0857 ,  Y10T29/49007

Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.

公开(公告)号：US20160060102A1

公开(公告)日：2016-03-03

申请号：US13855988

申请日：2013-04-03

Applicant: MCube, Inc.

Inventor： Xiao Charles Yang

IPC: B81B7/00 ,  H01L27/092

CPC classification number: B81B7/008 ,  B81B7/0038 ,  B81B2207/094 ,  B81C1/00238 ,  B81C1/00246 ,  H01L21/8221 ,  H01L27/092 ,  H01L29/0649 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A monolithically integrated CMOS and MEMS device. The device includes a first semiconductor substrate having a first surface region and one or more CMOS IC devices on a CMOS IC device region overlying the first surface region. The CMOS IC device region can also have a CMOS surface region. A bonding material can be provided overlying the CMOS surface region to form an interface by which a second semiconductor substrate can be joined to the CMOS surface region. The second semiconductor substrate has a second surface region coupled to the CMOS surface region by bonding the second surface region to the bonding material. The second semiconductor substrate includes one or more first air dielectric regions. One or more free standing MEMS structures can be formed within one or more portions of the processed first substrate.

Abstract translation: 单片集成CMOS和MEMS器件。 该器件包括第一半导体衬底，该第一半导体衬底具有覆盖第一表面区域的CMOS IC器件区域上的第一表面区域和一个或多个CMOS IC器件。 CMOS IC器件区域也可以具有CMOS表面区域。 可以提供覆盖CMOS表面区域的接合材料，以形成可将第二半导体衬底接合到CMOS表面区域的界面。 第二半导体衬底具有通过将第二表面区域结合到接合材料而耦合到CMOS表面区域的第二表面区域。 第二半导体衬底包括一个或多个第一空气介电区域。 可以在经处理的第一基板的一个或多个部分内形成一个或多个独立的MEMS结构。

公开(公告)号：US09276080B2

公开(公告)日：2016-03-01

申请号：US13788503

申请日：2013-03-07

Applicant: MCube, Inc.

Inventor： Sudheer S. Sridharamurthy ,  Te-Hse Terrence Lee ,  Ali J. Rastegar ,  Mugurel Stancu ,  Xiao Charles Yang

IPC: H01L29/66 ,  H01L27/06 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00801 ,  B81B3/0013 ,  B81B3/0086 ,  B81B7/0022 ,  B81B7/0064 ,  B81B2203/0163 ,  B81B2207/094 ,  B81C1/00238 ,  B81C2201/0132 ,  B81C2201/05 ,  B81C2203/0735 ,  H01L27/0688

Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

Abstract translation: 一种用于制造集成的MEMS-CMOS器件的方法使用微型制造工艺，其通过在CMOS的顶部上结合机械结构晶片并使用等离子体蚀刻来蚀刻机械层来实现在常规CMOS结构之上的移动机械结构（MEMS） 工艺，如深层反应离子蚀刻（DRIE）。 在蚀刻机械层期间，直接连接到机械层的CMOS器件暴露于等离子体。 这有时会导致对CMOS电路的永久性损坏，称为等离子体诱发损伤（PID）。 本发明的实施例提出了防止或减少该PID并且通过接地并为CMOS电路提供替代路径来保护下面的CMOS电路直到MEMS层被完全蚀刻的方法和结构。