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    Substrate processing apparatus
    22.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US10403523B2

    公开(公告)日：2019-09-03

    申请号：US15211538

    申请日：2016-07-15

    Applicant: ASM IP Holding B.V.

    Inventor： Soo Hyun Kim ,  Dae Youn Kim ,  Izumi Arai

    IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687

    Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

    SUBSTRATE PROCESSING DEVICE
    23.
    发明申请
    SUBSTRATE PROCESSING DEVICE 审中-公开

    公开(公告)号：US20190035647A1

    公开(公告)日：2019-01-31

    申请号：US16039938

    申请日：2018-07-19

    Applicant: ASM IP Holding B.V.

    Inventor： Ju Il Lee ,  Hie Chul Kim ,  Dae Youn Kim

    IPC: H01L21/67

    Abstract: Provided is a substrate-processing device capable of preventing a top lid from sagging downward by the own weight of the substrate-processing device and/or a vacuum suction force generated by a vacuum pump and/or thermal shock at high temperature process, in a chamber including a plurality of reactors. Also, provided is a rotating shaft for transferring a substrate between the plurality of reactors.

    Deposition apparatus
    26.
    发明授权
    Deposition apparatus 有权

    公开(公告)号：US09679750B2

    公开(公告)日：2017-06-13

    申请号：US14275912

    申请日：2014-05-13

    Applicant: ASM IP Holding B.V.

    Inventor： Young Seok Choi ,  Dae Youn Kim

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568

    Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval.

    METHOD OF DEPOSITING THIN FILM
    27.
    发明申请
    METHOD OF DEPOSITING THIN FILM 有权
    沉积薄膜的方法

    公开(公告)号：US20150125629A1

    公开(公告)日：2015-05-07

    申请号：US14526811

    申请日：2014-10-29

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon KIM ,  Dae Youn Kim ,  Sang Wook Lee

    IPC: C23C16/455 ,  C23C16/24 ,  C23C16/513 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/30

    CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

    Abstract translation: 沉积薄膜的方法包括：首先重复第一气体供应循环，第一气体供应循环包括将源气体供应到反应空间; 供应第一等离子体，同时向反应空间供应反应气体; 重复第二次气体供给循环第二次，第二气体供应循环包括将源气体供应到反应空间; 以及在将所述反应气体供应到所述反应空间的同时供给第二等离子体，其中所述第一等离子体的供给包括供给远程等离子体，所述第二等离子体的供给包括供给直接等离子体

    Thin film deposition apparatus
    30.
    发明授权
    Thin film deposition apparatus 有权

    公开(公告)号：US10822695B2

    公开(公告)日：2020-11-03

    申请号：US16834283

    申请日：2020-03-30

    Applicant: ASM IP Holding B.V.

    Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/67

    Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

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