公开(公告)号：US08110439B2

公开(公告)日：2012-02-07

申请号：US12614998

申请日：2009-11-09

Applicant: Cheeman Yu ,  Chi-Chin Liao ,  Hem Takiar

Inventor： Cheeman Yu ,  Chi-Chin Liao ,  Hem Takiar

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/30

CPC classification number: H01L24/49 ,  H01L23/3121 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1064 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An electronic component is disclosed including a plurality of stacked semiconductor packages. A first such embodiment includes an internal connector for electrically coupling the stacked semiconductor packages. A second such embodiment includes an external connector for electrically coupling the stacked semiconductor packages.

Abstract translation: 公开了一种包括多个堆叠的半导体封装的电子部件。 第一个这样的实施例包括用于电耦合堆叠的半导体封装的内部连接器。 第二个这样的实施例包括用于电耦合堆叠的半导体封装的外部连接器。

公开(公告)号：US20100052155A1

公开(公告)日：2010-03-04

申请号：US12614945

申请日：2009-11-09

Applicant: Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

Inventor： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC: H01L23/04

CPC classification number: G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

Abstract translation: 公开了一种闪存卡及其制造方法。 卡包括制造成接收单面或双面盖的半导体封装。 半导体封装的表面可以形成有孔，沟槽和/或戳记。 在形成孔，沟和/或标记之后，可以在注射成型工艺中将盖子附接到包装表面。 在注射成型过程中，熔融的塑料流入与半导体封装的表面互连的孔，沟槽和/或戳痕。 因此，当熔融塑料硬化时，孔，沟槽和/或戳痕确保盖保持牢固地附接到半导体封装。

公开(公告)号：US20140015116A1

公开(公告)日：2014-01-16

申请号：US14008457

申请日：2011-12-16

Applicant: Peng Fu ,  Shan Luo ,  Zhong Lu ,  Kaiyou Qian ,  Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Ye Bai

Inventor： Peng Fu ,  Shan Luo ,  Zhong Lu ,  Kaiyou Qian ,  Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Ye Bai

IPC: H01L23/552

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2223/5442 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract translation: 公开了一种包括屏蔽电磁辐射和/或耗散热的金属层的存储器件，以及制造存储器件的方法。 金属层形成在金属层转移组件上。 将金属层转移组件和未封装的存储器件放置在模具中并封装。 在模塑料的包封和固化期间，金属层从屏蔽转移到封装的存储器件。

公开(公告)号：US08482139B2

公开(公告)日：2013-07-09

申请号：US12614945

申请日：2009-11-09

Applicant: Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

Inventor： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC: H01L23/29

CPC classification number: G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

公开(公告)号：US08349655B2

公开(公告)日：2013-01-08

申请号：US12819818

申请日：2010-06-21

Applicant: Cheeman Yu ,  Vani Verma ,  Hem Takiar

Inventor： Cheeman Yu ,  Vani Verma ,  Hem Takiar

IPC: H01L21/44

CPC classification number: H01L23/4951 ,  H01L23/49541 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.

Abstract translation: 公开了一种制造基于引线框的半导体封装的方法以及由此形成的半导体封装。 在实施例中，具有沿两个相邻边缘的管芯接合焊盘的半导体管芯可以电耦合到四面引线框架的四个侧面。 实施例涉及引线和无引线型引线框架。

公开(公告)号：US09704797B2

公开(公告)日：2017-07-11

申请号：US14118485

申请日：2011-05-18

Applicant: Zhong Lu ,  Fen Yu ,  Chin Tien Chiu ,  Cheeman Yu ,  Fuqiang Xiao

Inventor： Zhong Lu ,  Fen Yu ,  Chin Tien Chiu ,  Cheeman Yu ,  Fuqiang Xiao

IPC: H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768

CPC classification number: H01L23/49866 ,  H01L21/768 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03013 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06145 ,  H01L2224/06155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48456 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78349 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48095

Abstract: A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.

公开(公告)号：US09337153B2

公开(公告)日：2016-05-10

申请号：US14008457

申请日：2011-12-16

Applicant: Peng Fu ,  Shan Luo ,  Zhong Lu ,  Kaiyou Qian ,  Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Ye Bai

Inventor： Peng Fu ,  Shan Luo ,  Zhong Lu ,  Kaiyou Qian ,  Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Ye Bai

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/433 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2223/5442 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract translation: 公开了一种包括屏蔽电磁辐射和/或耗散热的金属层的存储器件，以及制造存储器件的方法。 金属层形成在金属层转移组件上。 将金属层转移组件和未封装的存储器件放置在模具中并封装。 在模塑料的包封和固化期间，金属层从屏蔽转移到封装的存储器件。

公开(公告)号：US20130006564A1

公开(公告)日：2013-01-03

申请号：US13634068

申请日：2010-10-04

Applicant: Didier Chavet ,  Cheeman Yu ,  Hem Takiar ,  Frank Lu ,  Chih-Chiang Tung ,  Jiaming Shi

Inventor： Didier Chavet ,  Cheeman Yu ,  Hem Takiar ,  Frank Lu ,  Chih-Chiang Tung ,  Jiaming Shi

IPC: G06F19/00 ,  H01L29/02

CPC classification number: H01L23/544 ,  H01L21/67294 ,  H01L22/12 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A system is disclosed for providing backward and forward traceability by a methodology which identifies discrete components (die, substrate and/or passives) that are included in a semiconductor device. The present technology further includes a system for generating a unique identifier and marking a semiconductor device with the unique identifier enabling the semiconductor device, and the discrete components within that device, to be tracked and traced through each process and test in the production of the semiconductor device.

Abstract translation: 公开了一种用于通过识别包括在半导体器件中的分立组件（裸片，衬底和/或无源）的方法来提供向后和向前可追溯性的系统。 本技术还包括用于产生唯一标识符和标记半导体器件的系统，该半导体器件具有能够使半导体器件以及该器件内的分立器件被跟踪并通过每个工艺进行跟踪并在半导体生产中测试的唯一标识符 设备。

公开(公告)号：US20120146247A1

公开(公告)日：2012-06-14

申请号：US13265666

申请日：2011-06-08

Applicant: Itzhak Pomerantz ,  Shiv Kumar ,  Robert Miller ,  Chin-Tien Chiu ,  Peng Fu ,  Cheeman Yu ,  Hem Takiar ,  Chih Chiang Tung ,  Kaiyou Qian ,  Rahav Yairi

Inventor： Itzhak Pomerantz ,  Shiv Kumar ,  Robert Miller ,  Chin-Tien Chiu ,  Peng Fu ,  Cheeman Yu ,  Hem Takiar ,  Chih Chiang Tung ,  Kaiyou Qian ,  Rahav Yairi

IPC: H01L23/28

CPC classification number: G06K19/07732 ,  H01L2924/0002 ,  H05K5/0278 ,  H01L2924/00

Abstract: A memory device is disclosed including at least one surface pre-treated to roughen the surface for better adhesion of a curable fluid such as glue or ink on the surface. The surface of the memory device may be pre-treated by scoring lines in the surface with a laser or by forming discrete deformations with a particle blaster. The surface may also be roughened by providing a roughened pattern on a mold plate during an encapsulation process. In further examples, the surface may be chemically pre-treated to roughen the surface and/or increase the adhesion energy of the surface.

Abstract translation: 公开了一种记录装置，其包括至少一个经过预处理的表面以粗糙化表面，以便在表面上更好地粘附可固化流体例如胶水或油墨。 存储器件的表面可以通过用激光在表面上刻划线或者通过用粒子喷射器形成离散的变形来预处理。 在封装过程中，通过在模板上提供粗糙图案也可以使表面粗糙化。 在另外的实施例中，表面可以被化学预处理以使表面粗糙化和/或增加表面的粘附能。

公开(公告)号：US07939944B2

公开(公告)日：2011-05-10

申请号：US12843279

申请日：2010-07-26

Applicant: Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheeman Yu ,  Hem Takiar

Inventor： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheeman Yu ,  Hem Takiar

IPC: H01L23/48

CPC classification number: H01L23/49833 ,  H01L23/525 ,  H01L24/48 ,  H01L24/97 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01078 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1438 ,  H01L2924/1531 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/85 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.

Abstract translation: 公开了具有再分配层的半导体器件及其形成方法。 在晶片上制造半导体管芯之后，将带组件施加到与晶片上的每个半导体管芯的表面接触的晶片表面上。 带组件包括作为基底层的后研磨带，以及粘附到后研磨带的胶片组件。 膜组件又包括粘附膜，其上沉积有导电材料的薄层。 使用例如激光器将再分布层图案追踪到带组件中。 此后，可以去除带组件的未加热部分，在每个半导体管芯上留下加热的再分布层图案。