摘要:
A section processing apparatus has a mark forming control portion that transmits control information for forming marks on a surface of a sample. Each of the marks has at least two portions intersecting at a converging portion located at a previously determined position of an observation target section of the sample or in the vicinity of the previously determined position. A first focused ion beam apparatus emits a first focused beam for forming each of the marks on the surface of the sample based on the control information transmitted by the mark forming control portion and for processing a section of the sample. The section of the sample is processed by scanning the first focused beam in parallel with the at least two portions of the marks in the direction of the converging portion, while the section of the sample and positions of the marks are observed by a second focused ion beam apparatus, and to finish processing of the section of the sample when the first focused beam reaches the converging portion or a vicinity thereof.
摘要:
A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.
摘要:
A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metal ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion, and a beam diameter of the second ion beam 20A emitted from the second ion beam irradiation system 20 is less than that of the first ion beam 10A emitted from the first ion beam irradiation system 10.
摘要:
In a method of making a lamina specimen, first and second ion beams are simultaneously used to sputter etch first and second side walls of a lamina region at the same time under first and second ion beam conditions. A scanning ion microscope observation of the lamina region is made using the second ion beam while sputter etching of the first and second side walls is continued using the first ion beam until the thickness of the lamina has a predetermined value.
摘要:
objects to be achieved by the invention are to provide a nanobio device in which cultured cells are organized at a high-level in a state near in vivo, and to provide a method of using the nanobio device of imitative anatomy structure. The nanobio device of imitative anatomy structure of the invention is obtained by manufacturing a substrate with a bio-compatible substance and arranging a plurality of types of cells thereon in a desired array. A method of manufacturing a nanobio device in the invention includes a step of manufacturing a substrate for a nanobio device by a micromachine processing technique and a step of arranging a plurality of cultured cells on the substrate in a desired array with laser optical tweezers.
摘要:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要:
The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.
摘要:
A method an apparatus for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas. The apparatus includes a reaction chamber including a support for a substrate, a device for introducing a reactive gas into the reaction chamber, an electric discharge device, and a device for forming an electric field in the reaction chamber in a direction to the support for the substrate, and an outlet for discharging the reactive gas.
摘要:
A carrier box 21 for a semiconductor substrate, including an opening and closing mechanism for taking the semiconductor in or out of the box 21. The box 21 is provided with a gas cleaning device A-2 which uses a photo-electron or the photo-catalyst actuated by light irradiation for cleaning an inside of the box, or a gas cleaning unit including the gas cleaning device and a rechargeable battery for supplying the gas cleaning device with electricity and integrated into the gas cleaning unit, and thereby providing a practically efficient function to remove particles or gaseous harmful components.
摘要:
A method and an apparatus for removing particles from a surface of an article, such as a semiconductor wafer in a clean room. The particles are supplied with an electric charge. Subsequently, an ultrasonic wave or a gas stream is applied onto the surface of the article while an electric field is applied for driving away the electrically charged particles from the surface, thereby removing particles having a dimension smaller than 1 micrometer from the surface. The presence of a collecting member allows the removal of resulting, floating particles.