Section processing method and its apparatus
    21.
    发明授权
    Section processing method and its apparatus 有权
    截面加工方法及其装置

    公开(公告)号:US08306264B2

    公开(公告)日:2012-11-06

    申请号:US12380432

    申请日:2009-02-27

    IPC分类号: G06K9/00

    摘要: A section processing apparatus has a mark forming control portion that transmits control information for forming marks on a surface of a sample. Each of the marks has at least two portions intersecting at a converging portion located at a previously determined position of an observation target section of the sample or in the vicinity of the previously determined position. A first focused ion beam apparatus emits a first focused beam for forming each of the marks on the surface of the sample based on the control information transmitted by the mark forming control portion and for processing a section of the sample. The section of the sample is processed by scanning the first focused beam in parallel with the at least two portions of the marks in the direction of the converging portion, while the section of the sample and positions of the marks are observed by a second focused ion beam apparatus, and to finish processing of the section of the sample when the first focused beam reaches the converging portion or a vicinity thereof.

    摘要翻译: 区段处理设备具有标记形成控制部分,其在样品的表面上传送用于形成标记的控制信息。 每个标记具有在位于样品的观察目标部分的预先确定的位置处的收敛部分或者在先前确定的位置附近的至少两个部分。 第一聚焦离子束装置基于由标记形成控制部分发送的控制信息和用于处理样品的一部分,发射用于形成样品表面上的每个标记的第一聚焦光束。 通过在收敛部分的方向上与标记的至少两个部分平行地扫描第一聚焦光束,同时样品的部分和标记的位置被第二聚焦离子 并且当第一聚焦光束到达会聚部分或其附近时,完成样品部分的处理。

    Method of making lamina specimen
    24.
    发明授权
    Method of making lamina specimen 有权
    制作薄片样本的方法

    公开(公告)号:US07700367B2

    公开(公告)日:2010-04-20

    申请号:US10563515

    申请日:2004-07-05

    申请人: Toshiaki Fujii

    发明人: Toshiaki Fujii

    IPC分类号: G01N1/00

    摘要: In a method of making a lamina specimen, first and second ion beams are simultaneously used to sputter etch first and second side walls of a lamina region at the same time under first and second ion beam conditions. A scanning ion microscope observation of the lamina region is made using the second ion beam while sputter etching of the first and second side walls is continued using the first ion beam until the thickness of the lamina has a predetermined value.

    摘要翻译: 在制备薄片样品的方法中,第一和第二离子束同时用于在第一和第二离子束条件下同时溅射蚀刻层板区域的第一和第二侧壁。 使用第二离子束进行层状区域的扫描离子显微镜观察,同时使用第一离子束继续溅射蚀刻第一和第二侧壁,直到层的厚度具有预定值。

    Nanobio device of imitative anatomy structure
    25.
    发明申请
    Nanobio device of imitative anatomy structure 有权
    模拟解剖结构的Nanobio装置

    公开(公告)号:US20060188946A1

    公开(公告)日:2006-08-24

    申请号:US11353603

    申请日:2006-02-14

    IPC分类号: G01N33/567 G01N33/53

    CPC分类号: G01N33/5088 Y10T436/11

    摘要: objects to be achieved by the invention are to provide a nanobio device in which cultured cells are organized at a high-level in a state near in vivo, and to provide a method of using the nanobio device of imitative anatomy structure. The nanobio device of imitative anatomy structure of the invention is obtained by manufacturing a substrate with a bio-compatible substance and arranging a plurality of types of cells thereon in a desired array. A method of manufacturing a nanobio device in the invention includes a step of manufacturing a substrate for a nanobio device by a micromachine processing technique and a step of arranging a plurality of cultured cells on the substrate in a desired array with laser optical tweezers.

    摘要翻译: 本发明要实现的目的是提供一种纳米生物装置,其中培养细胞在体内接近的状态下组织成高水平,并且提供使用模拟解剖结构的纳米装置的方法。 本发明的模拟解剖结构的纳米装置通过用生物相容性物质制造衬底并以期望的阵列布置多种类型的细胞而获得。 在本发明中制造纳米装置的方法包括通过微机械加工技术制造纳米装置用基板的步骤,以及使用激光光学镊子以期望的阵列在基板上排列多个培养细胞的步骤。

    Semiconductor manufacturing method and apparatus
    27.
    发明申请
    Semiconductor manufacturing method and apparatus 审中-公开
    半导体制造方法和装置

    公开(公告)号:US20050150516A1

    公开(公告)日:2005-07-14

    申请号:US10486207

    申请日:2002-05-14

    摘要: The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.

    摘要翻译: 本发明的目的在于提供制造半导体的工艺和设备,根据该工艺和设备可以通过简单的手段控制晶片表面的氧化,并且可以完全控制促进氧化的污染物和引起晶片产量降低的污染物。 为了实现上述目的,本发明提供一种制造半导体的方法,其特征在于,在用负离子富集气体暴露基板的表面的同时对基板进行处理; 以及用于制造半导体的设备,包括通过待处理气体的气体通道; 由位于所述气体通道的上游部分的气体清洁器和位于其下游部分的负离子发生器组成的负离子富集气体发生器和用于将所得负离子富集气体供应到每个基板的表面的装置 。

    Chemical vapor deposition method and chemical vapor deposition apparatus
    28.
    发明授权
    Chemical vapor deposition method and chemical vapor deposition apparatus 失效
    化学气相沉积法和化学气相沉积装置

    公开(公告)号:US06461692B2

    公开(公告)日:2002-10-08

    申请号:US09117285

    申请日:1998-10-26

    IPC分类号: C23C1648

    摘要: A method an apparatus for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas. The apparatus includes a reaction chamber including a support for a substrate, a device for introducing a reactive gas into the reaction chamber, an electric discharge device, and a device for forming an electric field in the reaction chamber in a direction to the support for the substrate, and an outlet for discharging the reactive gas.

    摘要翻译: 一种用于生产薄膜的化学气相沉积装置的方法。 该方法包括以下步骤:将反应气体引入反应室,其中将基底支撑在反应室中; 将带电粒子与反应气体的组分结合起来,用于离子化该组分; 并在电场中将离子化的组分静电沉积到衬底上。 带电粒子可以是光电子或通过放电产生的正离子或负离子。 反应性气体可以单独是含有薄膜成分或成分气体和氧化还原气体的混合物的成分气体。 该装置包括反应室,该反应室包括用于基板的支撑件,用于将反应气体引入反应室的装置,放电装置,以及用于在反应室中朝着支撑件的方向形成电场的装置 基板和用于排出反应气体的出口。

    Carrier box for semiconductor substrate
    29.
    发明授权
    Carrier box for semiconductor substrate 失效
    用于半导体衬底的载体箱

    公开(公告)号:US06395240B1

    公开(公告)日:2002-05-28

    申请号:US09555381

    申请日:2000-05-30

    IPC分类号: B01J1908

    CPC分类号: H01L21/67393 H01L21/67017

    摘要: A carrier box 21 for a semiconductor substrate, including an opening and closing mechanism for taking the semiconductor in or out of the box 21. The box 21 is provided with a gas cleaning device A-2 which uses a photo-electron or the photo-catalyst actuated by light irradiation for cleaning an inside of the box, or a gas cleaning unit including the gas cleaning device and a rechargeable battery for supplying the gas cleaning device with electricity and integrated into the gas cleaning unit, and thereby providing a practically efficient function to remove particles or gaseous harmful components.

    摘要翻译: 一种用于半导体衬底的载体盒21,包括用于将半导体插入或取出盒21的开闭机构。盒21设置有使用光电子或光电子的气体净化装置A-2, 通过光照射来驱动以清洁盒子内部的催化剂,或包括气体清洁装置的气体净化单元和用于向气体净化装置供电并集成到气体净化单元中的可再充电电池,从而提供实际有效的功能 去除颗粒或气体有害成分。

    Method for removing particles from surface of article

    公开(公告)号:US06391118B1

    公开(公告)日:2002-05-21

    申请号:US09845177

    申请日:2001-05-01

    IPC分类号: B08B312

    摘要: A method and an apparatus for removing particles from a surface of an article, such as a semiconductor wafer in a clean room. The particles are supplied with an electric charge. Subsequently, an ultrasonic wave or a gas stream is applied onto the surface of the article while an electric field is applied for driving away the electrically charged particles from the surface, thereby removing particles having a dimension smaller than 1 micrometer from the surface. The presence of a collecting member allows the removal of resulting, floating particles.