公开(公告)号：US06372558B1

公开(公告)日：2002-04-16

申请号：US09376840

申请日：1999-08-18

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2202/105 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/2205 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1296 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/6678 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648

摘要： The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic device such as a thin film semiconductor device for display including the active matrix substrate. The single crystal silicon thin film is deposited by hetero epitaxial growth by a catalytic CVD method or the like using a crystalline sapphire thin film formed on the substrate as a seed so that the single crystal silicon layer obtained is used for top gate type MOSTFTs of the electrooptic device such as a LED or the like in which a display region and a peripheral driving circuit region are integrated.

摘要翻译： 本发明提供一种具有内置高性能驱动器的有源矩阵基板，其中具有高电子/空穴迁移率的单晶硅薄膜在较低温度下均匀地沉积，并且电光装置如薄膜 包括有源矩阵基板的显示用半导体装置。 通过使用形成在基板上的晶体蓝宝石薄膜作为种子的催化CVD法等，通过异质外延生长来沉积单晶硅薄膜，使得所获得的单晶硅层用于顶栅型MOSTFT 集成了显示区域和外围驱动电路区域的电光装置，例如LED等。

公开(公告)号：US06185031B2

公开(公告)日：2001-02-06

申请号：US09315977

申请日：1999-05-21

申请人： Masataka Shingu ,  Hisayoshi Yamoto ,  Tohru Sugimoto

发明人： Masataka Shingu ,  Hisayoshi Yamoto ,  Tohru Sugimoto

IPC分类号： G02B2600

CPC分类号： G02F1/29 ,  G02F1/355

摘要： The invention provides an optical switching method and apparatus by which the response time of a variation in refractive index of light can be further reduced. An electric field applied to a light passing element made of a substance containing conjugated system electrons is controlled to vary the condition of electrons of the substance of the light passing element to vary the refractive index of the light passing element. Then, the outgoing direction of light introduced into the light passing element is controlled to deflect the outgoing light from the light passing element, and the deflected outgoing light is introduced so as to be irradiated upon a selected control object element to control the control object element.

摘要翻译： 本发明提供一种可以进一步降低光的折射率变化的响应时间的光学切换方法和装置。 控制由包含共轭系统电子的物质制成的光通过元件的电场，以改变光通过元件的物质的电子状态，以改变光通过元件的折射率。 然后，控制引入光通过元件的光的出射方向，使来自光通过元件的出射光偏转，并且引出偏转的出射光，以照射到所选择的控制对象元件上，以控制控制对象元件 。

公开(公告)号：US06090657A

公开(公告)日：2000-07-18

申请号：US859916

申请日：1997-05-21

申请人： Hisayoshi Yamoto ,  Akihiko Ochiai

发明人： Hisayoshi Yamoto ,  Akihiko Ochiai

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： A capacitor in a ferroelectric nonvolatile memory (FERAM) comprising a lower electrode formed on a semiconductor substrate; a ferroelectric thin film formed on the lower electrode; an upper electrode formed on the ferroelectric thin film; a first protective layer consisting of one or more layers formed between the semiconductor substrate and the lower electrode, and composed of a material selected from those of Group IVa transition metal, Group Va transition metal, Group IVa transition metal nitride, Group Va transition metal nitride, silicon nitride, nickel and palladium; and a second protective layer consisting of one or more layers formed on the upper electrode, and composed of a material selected from those of Group IVa transition metal, Group Va transition metal, Group IVa transition metal nitride, Group Va transition metal nitride, nickel and palladium. Since the ferroelectric capacitor is enclosed with composite films of such materials, it becomes possible to prevent diffusion of hydrogen and intrusion of water content therein to consequently avert deterioration of the characteristics.

摘要翻译： 一种铁电非易失性存储器（FERAM）中的电容器，包括形成在半导体衬底上的下电极; 形成在下电极上的铁电薄膜; 形成在铁电薄膜上的上电极; 由形成在半导体衬底和下电极之间的一层或多层组成的第一保护层，并且由选自第Ⅳa族过渡金属，第Va族过渡金属，第Ⅳa族过渡金属氮化物，第Va族过渡金属氮化物 ，氮化硅，镍和钯; 以及由形成在上电极上的一层或多层构成的第二保护层，并且由选自第Ⅳa族过渡金属，第Va族过渡金属，Ⅳa族过渡金属氮化物，Ⅴa族过渡金属氮化物，镍和 钯。 由于铁电电容器被这种材料的复合膜包围，因此可以防止氢的扩散和水分含量的侵入，从而避免特性劣化。

公开(公告)号：US5162892A

公开(公告)日：1992-11-10

申请号：US703057

申请日：1991-05-17

申请人： Hisao Hayashi ,  Hisayoshi Yamoto ,  Chiaki Sakai

发明人： Hisao Hayashi ,  Hisayoshi Yamoto ,  Chiaki Sakai

IPC分类号： H01L21/30 ,  H01L21/318 ,  H01L21/84 ,  H01L23/29 ,  H01L27/06 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L23/291 ,  H01L21/3003 ,  H01L21/3185 ,  H01L21/84 ,  H01L27/0688 ,  H01L29/04 ,  H01L29/78675 ,  H01L2924/0002 ,  H01L2924/13091

摘要： A thin film semiconductor device with a polycrystalline silicon film forming an active channel region, a source region and a drain region, is encapsulated in a passivation layer which also serves as a source of free hydrogen. Migration of hydrogen into the active region improves the effective carrier mobility, the threshold voltage and the gate voltage of the device by reducing carrier trap density thereof. The passivation layer is activated during annealing to drive hydrogen through porous or transmissive layers of the device to the active region. Effective mobilities of up to 100 cm.sup.2 /V sec can be achieved in the preferred construction. The semicondcutor device can be fabricated in the form of IC chips.

摘要翻译： 具有形成有源沟道区，源极区和漏极区的多晶硅膜的薄膜半导体器件被封装在还用作游离氢源的钝化层中。 通过降低其载流子阱密度，氢向有源区的迁移改善了器件的有效载流子迁移率，阈值电压和栅极电压。 钝化层在退火过程中被激活，以将氢气通过器件的多孔或透射层驱动到有源区。 在优选的结构中可达到高达100cm2 / V秒的有效迁移率。 半切割器件可以以IC芯片的形式制造。

公开(公告)号：US4302763A

公开(公告)日：1981-11-24

申请号：US65262

申请日：1979-08-09

申请人： Norikazu Ohuchi ,  Hisayoshi Yamoto ,  Hisao Hayashi ,  Takeshi Matsushita

发明人： Norikazu Ohuchi ,  Hisayoshi Yamoto ,  Hisao Hayashi ,  Takeshi Matsushita

IPC分类号： H01L21/205 ,  H01L29/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/72 ,  H01L29/737 ,  H01L29/74 ,  H01L31/0368 ,  H01L31/0745 ,  H01L33/00 ,  H01L29/161

CPC分类号： H01L33/002 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/0611 ,  H01L29/0638 ,  H01L29/0839 ,  H01L29/72 ,  H01L29/7375 ,  H01L29/7408 ,  H01L31/03682 ,  H01L31/0745 ,  Y02E10/546

摘要： A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.

摘要翻译： 半导体器件包括半导体衬底，在衬底中的第一导电类型的第一区域，在衬底中并与第一区域相邻的第二导电类型的第二区域，与第二区域相邻的第一导电类型的第三区域具有 由与衬底相同的元件和氧构成的衬底上的至少一部分，该部分的带隙能量大于第二区域的带隙能量，以及用于将第一区域中的多数载流子输送到第三区域的装置。

公开(公告)号：US4014037A

公开(公告)日：1977-03-22

申请号：US561532

申请日：1975-03-24

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawada

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawada

IPC分类号： H01L29/73 ,  G02B6/12 ,  H01L21/283 ,  H01L21/314 ,  H01L21/331 ,  H01L21/76 ,  H01L27/04 ,  H01L29/78 ,  H01L29/861 ,  H01L29/34

CPC分类号： H01L21/314 ,  H01L2924/0002 ,  Y10S257/905

摘要： A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

公开(公告)号：US20060270222A1

公开(公告)日：2006-11-30

申请号：US10508427

申请日：2003-03-18

申请人： Hisayoshi Yamoto

发明人： Hisayoshi Yamoto

IPC分类号： H01L21/44

CPC分类号： C23C16/4402 ,  C23C16/409 ,  C23C16/4407 ,  C23C16/4481 ,  C23C16/4486

摘要： It is an object of the present invention to provide a CVD thin film deposition method which can be used for a long time without producing cloggings or the like and can stably supply raw materials to a reaction portion. In the CVD thin film deposition method which forms a predetermined CVD thin film by passing a CVD raw material solution and a gas to a CVD chamber through a vaporizer for an appropriate time, the gas from a vaporizer outlet is switched to an exhaust side and only a solvent which can dissolve attachments adhering to the vaporizer is caused to flow through the vaporizer when the predetermined time passed.

摘要翻译： 本发明的目的是提供一种可以长时间使用而不产生堵塞等并可稳定地将原料供应到反应部分的CVD薄膜沉积方法。 在通过将CVD原料溶液和气体通过蒸发器通过CVD室适当时间形成预定的CVD薄膜的CVD薄膜沉积方法中，来自蒸发器出口的气体仅切换到排气侧 当预定时间过去时，可使溶解附着在蒸发器上的附着物的溶剂流过蒸发器。

公开(公告)号：US07098085B2

公开(公告)日：2006-08-29

申请号：US10075774

申请日：2002-02-14

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/461

CPC分类号： H01L21/67167 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67213 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78684

摘要： A method is disclosed for forming high-quality high-crystallinity polycrystalline or monocrystalline thin semiconductor film. The method is capable of forming such a semiconductor film over a large area at low cost. An apparatus for practicing the method is also disclosed. To form a high-crystallinity large-grain polycrystalline film or monocrystalline thin semiconductor film on a substrate, or to produce a semiconductor device including a high-crystallinity large-grain polycrystalline film or monocrystalline thin semiconductor film disposed on a substrate, a low-crystal-quality thin semiconductor film is first formed on the substrate, and then focused-light annealing is performed on the low-crystal-quality thin semiconductor film thereby melting or semi-melting the low-crystal-quality thin semiconductor film. The focused-light annealing allows enhancement of crystallization that occurs when the melted low-crystal-quality thin semiconductor film is cooled, and thus the low-crystal-quality thin semiconductor film is converted into a high-quality polycrystalline (or monocrystalline) thin semiconductor film.

摘要翻译： 公开了形成高质量高结晶度多晶或单晶薄膜半导体膜的方法。 该方法能够以低成本在大面积上形成这种半导体膜。 还公开了一种用于实施该方法的装置。 为了在衬底上形成高结晶度大晶粒多晶膜或单晶薄膜半导体膜，或者制造包括设置在衬底上的高结晶度大晶粒多晶膜或单晶薄膜半导体膜的半导体器件，低结晶度 首先在基板上形成质量薄的半导体膜，然后对低品质的薄型半导体膜进行聚焦光退火，从而熔融或半熔融低品位的薄型半导体膜。 聚焦光退火使得当熔融的低晶质薄膜半导体薄膜被冷却时发生的结晶增强，从而将低结晶质量的薄的半导体薄膜转变成高品质的多晶（或单晶）薄的半导体 电影。

公开(公告)号：US07095082B2

公开(公告)日：2006-08-22

申请号：US09975680

申请日：2001-10-10

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： G02F1/13454 ,  G02F2202/105 ,  G09B5/04 ,  G09B19/06 ,  G10L21/06

摘要： Each of an electrooptical device and a driving substrate for the electrooptical device includes a first substrate having a display section provided with pixel electrodes and a peripheral-driving-circuit section provided on the periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate. A gate section including a gate electrode and a gate-insulating film is formed on one surface of the first substrate, a compound layer having high lattice matching with single-crystal silicon is formed on the surface of the first substrate, and a single-crystal silicon layer is formed on the first substrate including the compound layer and the gate section. The single-crystal silicon layer constitutes a channel region, a source region, and a drain region. In addition, a first bottom-gate thin-film transistor having the gate section is formed below the channel region, the first bottom-gate thin-film transistor constituting at least a part of the peripheral-driving-circuit section.

公开(公告)号：US06767755B2

公开(公告)日：2004-07-27

申请号：US10300387

申请日：2002-11-20

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuuichi Sato ,  Hajime Yagi

IPC分类号： H01L2100

CPC分类号： C30B13/00 ,  C30B29/06 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78648

摘要： A single-crystal silicon layer is formed by graphoepitaxy from a low-melting-point metal layer which contains dissolved polycrystalline or amorphous silicon, or from a melt of a silicon-containing low-melting-point metal, using step differences formed on a substrate as a seed for the epitaxial growth. This single-crystal silicon layer is used as dual-gate MOSTFTs, or bottom-gate MOSTFTs, of an electrooptical device such as an LCD integrating a display section and a peripheral-driving-circuit section. This process enables production of a uniform single-crystal silicon thin-film having high electron/hole mobility at a relatively low temperature. The display section includes LDD-nMOSTFTs or pMOSTFTs having high switching characteristics and a low leakage current. The peripheral-driving-circuit section includes cMOSTFTs, nMOSTFTs, pMOSTFTs, or a combination thereof, having high driving ability.