NANORIBBON-BASED CAPACITORS
    21.
    发明公开

    公开(公告)号:US20230187477A1

    公开(公告)日:2023-06-15

    申请号:US17548546

    申请日:2021-12-12

    CPC classification number: H01L28/60 H01L29/732

    Abstract: Capacitors based on stacks of nanoribbons and associated devices and systems are disclosed. In particular, a stack of at least two nanoribbons may be used to provide a two-terminal device referred to herein as a “nanoribbon-based capacitor,” where one nanoribbon serves as a first capacitor electrode and another nanoribbon serves as a second capacitor electrode. Using portions of nanoribbon stacks to implement nanoribbon-based capacitors could provide an appealing alternative to conventional capacitor implementations because it would require only modest process changes compared to fabrication of nanoribbon-based FETs and because nanoribbon-based capacitors could be placed close to active devices. Furthermore, with a few additional process steps, nanoribbon-based capacitors may, advantageously, be extended to implement other circuit blocks such as nanoribbon-based BJTs or three-nanoribbon arrangements with a common connection between two anodes and a separate connection to a cathode.

    THRESHOLD VOLTAGE TUNING FOR NANORIBBON-BASED TRANSISTORS

    公开(公告)号:US20230163170A1

    公开(公告)日:2023-05-25

    申请号:US17530836

    申请日:2021-11-19

    Abstract: Fabrication methods that may provide greater versatility in tuning threshold voltage of transistors implemented in different nanoribbons within a given stack and in tuning threshold voltage of transistors implemented in adjacent nanoribbon stacks, as well as corresponding devices, are disclosed. An example fabrication method includes selectively doping portions of semiconductor layers from which individual nanoribbons will be formed later. The selective doping is performed on a layer-by-layer basis, i.e., after a given semiconductor layer is deposited and before the next layer is deposited. In this manner, some nanoribbons of a given nanoribbon stack may be doped, while other nanoribbons of the same stack may be substantially undoped, or, more generally, different nanoribbons of a given nanoribbon stack may have different dopant concentrations. The differences in the dopant concentration of different nanoribbons within the stack advantageously allows forming transistors with different threshold voltages in a single nanoribbon stack.

    MICROELECTRONIC ASSEMBLIES HAVING TOPSIDE POWER DELIVERY STRUCTURES

    公开(公告)号:US20220415806A1

    公开(公告)日:2022-12-29

    申请号:US17355747

    申请日:2021-06-23

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a first microelectronic component, embedded in an insulating material on the surface of the package substrate, including a through-substrate via (TSV) electrically coupled to the first conductive pathway; a second microelectronic component embedded in the insulating material; and a redistribution layer on the insulating material including a second conductive pathway electrically coupling the TSV, the second microelectronic component, and the first microelectronic component.

    MICROELECTRONIC ASSEMBLIES HAVING TOPSIDE POWER DELIVERY STRUCTURES

    公开(公告)号:US20220415805A1

    公开(公告)日:2022-12-29

    申请号:US17355726

    申请日:2021-06-23

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, having a surface, including a first conductive pathway electrically coupled to a power source; an insulating material on the surface of the package substrate; a first microelectronic component, having a first surface facing the package substrate and an opposing second surface, embedded in the insulating material; a second microelectronic component, having a first surface facing the package substrate and an opposing second surface, embedded in the insulating material; a redistribution layer on the insulating material including a second conductive pathway electrically coupled to the second surface of the second microelectronic component and the second surface of the first microelectronic component; and a wire bond electrically coupling the first and the second conductive pathways.

    MICROELECTRONIC ASSEMBLIES HAVING TOPSIDE POWER DELIVERY STRUCTURES

    公开(公告)号:US20250157941A1

    公开(公告)日:2025-05-15

    申请号:US19025226

    申请日:2025-01-16

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

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