公开(公告)号：US11043457B2

公开(公告)日：2021-06-22

申请号：US16889735

申请日：2020-06-01

Applicant: Intel Corporation

Inventor： Amruthavalli Pallavi Alur ,  Sri Ranga Sai Boyapati ,  Robert Alan May ,  Islam A. Salama ,  Robert L. Sankman

IPC: H01L23/492 ,  H01L23/538 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00 ,  H01L25/18 ,  H01L23/31 ,  H01L21/66 ,  H01L21/683 ,  H01L25/11

Abstract: An embedded multi-die interconnect bridge apparatus and method includes photolithographically formed interconnects coupled to laser-drilled interconnects. Several structures in the embedded multi-die interconnect bridge apparatus exhibit characteristic planarization during fabrication and assembly.

公开(公告)号：US20210066232A1

公开(公告)日：2021-03-04

申请号：US17098754

申请日：2020-11-16

Applicant: Intel Corporation

Inventor： Robert Alan May ,  Sri Ranga Sai Boyapati ,  Kristof Kuwawi Darmawikarta ,  Srinivas V. Pietambaram ,  Javier Soto Gonzalez ,  Kwangmo Chris Lim ,  Aleksandar Aleksov

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/522 ,  H01L23/13 ,  H01L21/48

Abstract: Integrated circuit package substrates with high-density interconnect architecture for scaling high-density routing, as well as related structures, devices, and methods, are generally presented. More specifically, integrated circuit package substrates with fan out routing based on a high-density interconnect layer that may include pillars and vias, and integrated cavities for die attachment are presented. Additionally, integrated circuit package substrates with self-aligned pillars and vias formed on the high-density interconnect layer as well as related methods are presented.

公开(公告)号：US10163798B1

公开(公告)日：2018-12-25

申请号：US15853330

申请日：2017-12-22

Applicant: Intel Corporation

Inventor： Amruthavalli Pallavi Alur ,  Sri Ranga Sai Boyapati ,  Robert Alan May ,  Islam A. Salama ,  Robert L. Sankman

IPC: H01L25/10 ,  H01L23/538 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00 ,  H01L25/18 ,  H01L21/66 ,  H01L21/683 ,  H01L25/11 ,  H01L23/492

Abstract: An embedded multi-die interconnect bridge apparatus and method includes photolithographically formed interconnects coupled to laser-drilled interconnects. Several structures in the embedded multi-die interconnect bridge apparatus exhibit characteristic planarization during fabrication and assembly.

公开(公告)号：US20240219656A1

公开(公告)日：2024-07-04

申请号：US18089963

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Ziyin Lin ,  Yiqun Bai ,  Bohan Shan ,  Kyle Jordan Arrington ,  Haobo Chen ,  Dingying Xu ,  Robert Alan May ,  Gang Duan ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram

IPC: G02B6/42 ,  H01L23/15 ,  H01L25/16

CPC classification number: G02B6/4214 ,  H01L23/15 ,  H01L25/167 ,  H01L24/16 ,  H01L2224/16227

Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.

公开(公告)号：US20240219654A1

公开(公告)日：2024-07-04

申请号：US18089892

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Ziyin Lin ,  Yiqun Bai ,  Bohan Shan ,  Kyle Jordan Arrington ,  Haobo Chen ,  Dingying Xu ,  Robert Alan May ,  Gang Duan ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram

IPC: G02B6/42 ,  H01L25/16

CPC classification number: G02B6/4214 ,  H01L25/167

Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.

公开(公告)号：US20240111095A1

公开(公告)日：2024-04-04

申请号：US17957600

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Hiroki Tanaka ,  Brandon C. Marin ,  Robert Alan May ,  Suddhasattwa Nad ,  Benjamin Duong

IPC: G02B6/122

CPC classification number: G02B6/1226

Abstract: A hybrid plasmonic waveguide and associated methods are disclosed. In one example, the electronic device includes combining an electromagnetic wave propagating in a waveguide with a high refractive index and a surface plasmon from a metal surface to create a hybrid plasmon wave in a low refractive index material separating the dielectric waveguide and metal surface. In selected examples, surface mounted hybrid plasmonic waveguides are shown. In selected examples hybrid plasmonic waveguides embedded in glass interposers are shown.

公开(公告)号：US11894311B2

公开(公告)日：2024-02-06

申请号：US17716955

申请日：2022-04-08

Applicant: Intel Corporation

Inventor： Robert Alan May ,  Islam A. Salama ,  Sri Ranga Sai Boyapati ,  Sheng Li ,  Kristof Darmawikarta ,  Robert L. Sankman ,  Amruthavalli Pallavi Alur

IPC: H01L25/00 ,  H01L23/538 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L25/07 ,  H01L25/11

CPC classification number: H01L23/5389 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/25 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/071 ,  H01L25/112 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/22 ,  H01L2224/224 ,  H01L2224/24226 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73217 ,  H01L2224/73267 ,  H01L2924/15311

Abstract: A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

公开(公告)号：US11784128B2

公开(公告)日：2023-10-10

申请号：US17355301

申请日：2021-06-23

Applicant: Intel Corporation

Inventor： Robert Alan May ,  Kristof Darmawikarta ,  Sri Ranga Sai Sai Boyapati

IPC: H01L23/532 ,  H01L23/29 ,  H01L23/522 ,  H01L23/538 ,  H01L23/00 ,  H01L23/50

CPC classification number: H01L23/5329 ,  H01L23/293 ,  H01L23/5226 ,  H01L23/50 ,  H01L23/5385 ,  H01L24/19 ,  H01L24/25

Abstract: A die interconnect substrate comprises a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate comprises a multilayer substrate structure comprising a substrate interconnect. The bridge die is embedded in the multilayer substrate structure. The substrate interconnect extends from a level above the bridge die to a level below the bridge die. The multilayer substrate structure further comprises an electrically insulating layer comprising a first electrically insulating material. The multilayer substrate structure further comprises an electrically insulating filler structure located laterally between the bridge die and the electrically insulating layer, wherein the electrically insulating filler structure comprises a second electrically insulating material different from the first electrically insulating material.

公开(公告)号：US11764158B2

公开(公告)日：2023-09-19

申请号：US17306807

申请日：2021-05-03

Applicant: Intel Corporation

Inventor： Amruthavalli Pallavi Alur ,  Sri Ranga Sai Boyapati ,  Robert Alan May ,  Islam A. Salama ,  Robert L. Sankman

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00 ,  H01L25/18 ,  H01L23/31 ,  H01L21/66 ,  H01L21/683 ,  H01L25/11 ,  H01L23/492

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L21/6835 ,  H01L22/14 ,  H01L23/492 ,  H01L23/5383 ,  H01L24/14 ,  H01L24/17 ,  H01L25/115 ,  H01L25/117 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2224/17106 ,  H01L2224/18 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/1436 ,  H01L2924/00012

Abstract: An embedded multi-die interconnect bridge apparatus and method includes photolithographically formed interconnects coupled to laser-drilled interconnects. Several structures in the embedded multi-die interconnect bridge apparatus exhibit characteristic planarization during fabrication and assembly.

公开(公告)号：US20230134770A1

公开(公告)日：2023-05-04

申请号：US18090795

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Sanka Ganesan ,  Ram Viswanath ,  Xavier Francois Brun ,  Tarek A. Ibrahim ,  Jason M. Gamba ,  Manish Dubey ,  Robert Alan May

IPC: H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.