公开(公告)号：US20060091404A1

公开(公告)日：2006-05-04

申请号：US10977867

申请日：2004-10-29

申请人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

发明人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3205 ,  H01S5/34333

摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1-xN, AlxGa1-xN, or InxAlyGa1-x-yN.

摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

公开(公告)号：US20080023719A1

公开(公告)日：2008-01-31

申请号：US11868903

申请日：2007-10-08

申请人： Michael Camras ,  Michael Krames ,  Wayne Snyder ,  Frank Steranka ,  Robert Taber ,  John Uebbing ,  Douglas Pocius ,  Troy Trottier ,  Christopher Lowery ,  Gerd Mueller ,  Regina Mueller-Mach ,  Gloria Hofler

发明人： Michael Camras ,  Michael Krames ,  Wayne Snyder ,  Frank Steranka ,  Robert Taber ,  John Uebbing ,  Douglas Pocius ,  Troy Trottier ,  Christopher Lowery ,  Gerd Mueller ,  Regina Mueller-Mach ,  Gloria Hofler

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/502 ,  H01L33/62

摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.

摘要翻译： 提供了具有提高光提取效率的发光器件。 发光器件具有包括有源区的半导体层的一叠层。 叠层结合到透明光学元件上。

公开(公告)号：US20070045653A1

公开(公告)日：2007-03-01

申请号：US11400057

申请日：2006-04-07

申请人： Michael Krames ,  Gerd Mueller ,  Regina Mueller-Mach

发明人： Michael Krames ,  Gerd Mueller ,  Regina Mueller-Mach

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/50 ,  H01L2224/14

摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

摘要翻译： 一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。 发光层发射第一峰值波长的第一光。 吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。 透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

公开(公告)号：US20060121702A1

公开(公告)日：2006-06-08

申请号：US11330209

申请日：2006-01-10

申请人： Carrie Coman ,  Fred Kish ,  Michael Krames ,  Paul Martin

发明人： Carrie Coman ,  Fred Kish ,  Michael Krames ,  Paul Martin

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0216 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/32341

摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

公开(公告)号：US11605618B2

公开(公告)日：2023-03-14

申请号：US17204687

申请日：2021-03-17

申请人： Michael Krames ,  Bardia Pezeshki ,  Robert Kalman ,  Cameron Danesh

发明人： Michael Krames ,  Bardia Pezeshki ,  Robert Kalman ,  Cameron Danesh

IPC分类号： H01L25/075 ,  H01L33/06 ,  H01L33/62 ,  H01L33/58 ,  H01L33/10 ,  H01L33/32 ,  H01L33/22 ,  H01L33/60

摘要： An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.

公开(公告)号：US08740413B1

公开(公告)日：2014-06-03

申请号：US13328978

申请日：2011-12-16

申请人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

发明人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

IPC分类号： F21V9/00 ,  F21V9/16 ,  F21V21/00 ,  H01J63/04 ,  H01L33/00

CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/232 ,  F21V29/70 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

摘要翻译： 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。

公开(公告)号：US20050224826A1

公开(公告)日：2005-10-13

申请号：US10804314

申请日：2004-03-19

申请人： Matthijs Keuper ,  Michael Krames ,  Gerd Mueller

发明人： Matthijs Keuper ,  Michael Krames ,  Gerd Mueller

IPC分类号： G03B21/00 ,  G02F1/13357 ,  G03B21/14 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44

CPC分类号： H04N9/3152 ,  H01L33/0004 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/44 ,  H01L33/507 ,  H01L33/60

摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.

摘要翻译： 发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。 集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。 波长转换材料例如设置在出射表面上。 即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。 在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。 在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。 如果需要，可以在分束器和微显示器之间设置集中器元件。

公开(公告)号：US20050032257A1

公开(公告)日：2005-02-10

申请号：US10938237

申请日：2004-09-10

申请人： Michael Camras ,  Michael Krames ,  Wayne Snyder ,  Frank Steranka ,  Robert Taber ,  John Uebbing ,  Douglas Pocius ,  Troy Trottier ,  Christopher Lowery ,  Gerd Mueller ,  Regina Mueller-Mach ,  Gloria Hofler

发明人： Michael Camras ,  Michael Krames ,  Wayne Snyder ,  Frank Steranka ,  Robert Taber ,  John Uebbing ,  Douglas Pocius ,  Troy Trottier ,  Christopher Lowery ,  Gerd Mueller ,  Regina Mueller-Mach ,  Gloria Hofler

IPC分类号： H01L33/20 ,  H01L33/40 ,  H01L33/58 ,  H01L21/00

CPC分类号： H01L33/58 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/502 ,  H01L33/62

摘要： A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.

摘要翻译： 提供了一种将透明光学元件结合到具有包括包括有源区域的半导体层的层叠层的发光器件的方法。 该方法包括升高光学元件和叠层的温度并施加压力以将光学元件和叠层压在一起。 在一个实施例中，该方法还包括在叠层和光学元件之间设置透明粘结材料层。 接合方法可以应用于预制光学元件或稍后形成或成形为诸如透镜或聚光器的光学元件的光学元件材料块。

公开(公告)号：US08471280B2

公开(公告)日：2013-06-25

申请号：US12613924

申请日：2009-11-06

申请人： Rafael I. Aldaz ,  Grigoriy Basin ,  Paul S. Martin ,  Michael Krames

发明人： Rafael I. Aldaz ,  Grigoriy Basin ,  Paul S. Martin ,  Michael Krames

IPC分类号： H01L23/29

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/60 ,  H01L33/641 ,  H01L33/642 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.

摘要翻译： 在一个实施例中，倒装芯片LED形成有从其n层和p层的底表面延伸的高密度的金柱。 金柱结合到底座电极。 然后将底部填充材料模制以填充LED底部和底座之间的空隙。 底部填充物包含硅氧烷模塑料基料和约70-80重量％的氧化铝（或其它合适的材料）。 氧化铝的导热系数比典型的硅胶底部填充物的热导率高出约25倍，这主要是二氧化硅。 氧化铝是白色粉末。 底部填充剂还可以含有约5-10重量％的TiO 2以增加反射率。 LED灯由反射底层填充物向上反射，底部填充物有效地将热量传导到底座。 底部填充物也随机化光散射，改善光提取。 分布式金柱和底层填料在生长衬底剥离过程中支持LED层。

公开(公告)号：US20060202105A1

公开(公告)日：2006-09-14

申请号：US11080801

申请日：2005-03-14

申请人： Michael Krames ,  Gerd Mueller

发明人： Michael Krames ,  Gerd Mueller

IPC分类号： H01L27/00

CPC分类号： H01L33/501 ,  B82Y30/00 ,  C04B35/44 ,  C04B35/495 ,  C04B35/6268 ,  C04B35/62805 ,  C04B35/62807 ,  C04B35/62813 ,  C04B35/645 ,  C04B37/001 ,  C04B37/005 ,  C04B37/006 ,  C04B37/008 ,  C04B37/026 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/5454 ,  C04B2237/02 ,  C04B2237/06 ,  C04B2237/064 ,  C04B2237/068 ,  C04B2237/08 ,  C04B2237/083 ,  C04B2237/10 ,  C04B2237/12 ,  C04B2237/30 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/52 ,  C04B2237/525 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/76 ,  H01L33/0079 ,  H01L33/08 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/14 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.

摘要翻译： 诸如磷光体的材料光学耦合到包括设置在n型区域和p型区域之间的发光区域的半导体结构，以有效地将来自发光区域的光提取到荧光体中。 磷光体可以是与半导体结构的表面直接接触的荧光体颗粒，或者结合到半导体结构的陶瓷荧光体，或可以生长半导体结构的薄的成核结构。 磷光体优选是高吸收性和高效率的。 当半导体结构将光发射到这种高效，高吸收性的荧光体中时，磷光体可以有效地从结构中提取光，从而减少了现有技术装置中存在的光学损耗。