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    Optical system for light emitting diodes
    1.
    发明申请
    Optical system for light emitting diodes 失效
    发光二极管光学系统

    公开(公告)号：US20050224826A1

    公开(公告)日：2005-10-13

    申请号：US10804314

    申请日：2004-03-19

    申请人： Matthijs Keuper ,  Michael Krames ,  Gerd Mueller

    发明人： Matthijs Keuper ,  Michael Krames ,  Gerd Mueller

    IPC分类号： G03B21/00 ,  G02F1/13357 ,  G03B21/14 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44

    CPC分类号： H04N9/3152 ,  H01L33/0004 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/44 ,  H01L33/507 ,  H01L33/60

    摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.

    摘要翻译： 发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。 集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。 波长转换材料例如设置在出射表面上。 即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。 在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。 在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。 如果需要，可以在分束器和微显示器之间设置集中器元件。

    Selective filtering of wavelength-converted semiconductor light emitting devices
    4.
    发明申请
    Selective filtering of wavelength-converted semiconductor light emitting devices 失效
    波长转换半导体发光器件的选择滤波

    公开(公告)号：US20070045653A1

    公开(公告)日：2007-03-01

    申请号：US11400057

    申请日：2006-04-07

    申请人： Michael Krames ,  Gerd Mueller ,  Regina Mueller-Mach

    发明人： Michael Krames ,  Gerd Mueller ,  Regina Mueller-Mach

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/50 ,  H01L2224/14

    摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

    摘要翻译： 一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。 发光层发射第一峰值波长的第一光。 吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。 透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

    SEMICONDUCTOR LIGHT EMITTING DEVICES
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICES 有权
    半导体发光器件

    公开(公告)号：US20050023549A1

    公开(公告)日：2005-02-03

    申请号：US10633058

    申请日：2003-08-01

    申请人： Nathan Gardner ,  Jonathan Wierer ,  Gerd Mueller ,  Michael Krames

    发明人： Nathan Gardner ,  Jonathan Wierer ,  Gerd Mueller ,  Michael Krames

    IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

    摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

    摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

    Photonic crystal light emitting device
    10.
    发明申请
    Photonic crystal light emitting device 有权
    光子晶体发光装置

    公开(公告)号：US20060163606A1

    公开(公告)日：2006-07-27

    申请号：US11373636

    申请日：2006-03-09

    申请人： Jonathan Wierer ,  Michael Krames ,  John Epler

    发明人： Jonathan Wierer ,  Michael Krames ,  John Epler

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

    摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.

    摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。