公开(公告)号：US10559461B2

公开(公告)日：2020-02-11

申请号：US15581951

申请日：2017-04-28

Applicant: Lam Research Corporation

Inventor： Kapu Sirish Reddy ,  Meliha Gozde Rainville ,  Nagraj Shankar ,  Dennis M. Hausmann ,  David Charles Smith ,  Karthik Sivaramakrishnan ,  David W. Porter

IPC: C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52 ,  C23C16/04 ,  C23F1/02 ,  C23F1/08

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

公开(公告)号：US20180330985A1

公开(公告)日：2018-11-15

申请号：US15972554

申请日：2018-05-07

Applicant: Lam Research Corporation

Inventor： Yongsik Yu ,  Bart J. van Schravendijk ,  Nagraj Shankar ,  Bhadri N. Varadarajan

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/11575 ,  H01L23/532 ,  H01L23/528 ,  H01L21/02 ,  H01L21/56 ,  H01L21/311 ,  H01L27/11582

CPC classification number: H01L21/76816 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/56 ,  H01L21/76834 ,  H01L23/3157 ,  H01L27/11575 ,  H01L27/11582

Abstract: Methods and apparatuses for depositing an encapsulation layer over a staircase structure during fabrication of a 3D NAND structure to prevent degradation of an oxide-oxide interface and to prevent punchthrough of a wordline are provided. The encapsulation layer is a carbon-containing conformal film deposited over a staircase structure of alternating oxide and nitride layers prior to depositing oxide over the staircase structure.

公开(公告)号：US20180211846A1

公开(公告)日：2018-07-26

申请号：US15874793

申请日：2018-01-18

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Thomas Joseph Knisley ,  Nagraj Shankar ,  Meihua Shen ,  John Hoang ,  Prithu Sharma

IPC: H01L21/3213 ,  H01L23/532 ,  C23C16/02 ,  C23C16/04 ,  C23C16/16 ,  H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/54

CPC classification number: H01L21/32136 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/16 ,  C23C16/54 ,  H01J37/32357 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/32138 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.

公开(公告)号：US09859153B1

公开(公告)日：2018-01-02

申请号：US15350911

申请日：2016-11-14

Applicant: Lam Research Corporation

Inventor： Meliha Gozde Rainville ,  Nagraj Shankar ,  Kapu Sirish Reddy ,  Dennis M. Hausmann

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  C23C22/05 ,  H01L23/532

CPC classification number: H01L21/76834 ,  C23C16/403 ,  C23C16/4554 ,  C23C16/45589 ,  C23C16/52 ,  C23C22/05 ,  H01J37/00 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/31144 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53257

Abstract: Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. The deposition involves reacting an aluminum-containing precursor (e.g., a trialkylaluminum) with an alcohol and/or aluminum alkoxide. In one implementation the method involves flowing trimethylaluminum to the process chamber housing a substrate having an exposed metal and dielectric layers; purging and/or evacuating the process chamber; flowing t-butanol to the process chamber and allowing it to react with trimethylaluminum to form an aluminum oxide film and repeating the process steps until the film of desired thickness is formed.

公开(公告)号：US09633896B1

公开(公告)日：2017-04-25

申请号：US14949533

申请日：2015-11-23

Applicant: Lam Research Corporation

Inventor： Daniel Damjanovic ,  Pramod Subramonium ,  Nagraj Shankar

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/31 ,  H01L21/311

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76834 ,  H01L23/481

Abstract: Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iALD process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate. This step is performed in an absence of plasma. Next, the unadsorbed aluminum-containing compound is removed from the process chamber, and the substrate is treated with a process gas containing CO2 or N2O, and an inert gas in a plasma to form an AlO, AlOC, or AlON layer. These steps are then repeated.

公开(公告)号：US09190489B1

公开(公告)日：2015-11-17

申请号：US14479733

申请日：2014-09-08

Applicant: Lam Research Corporation

Inventor： Thomas Weller Mountsier ,  Bart J. van Schravendijk ,  Ananda K. Banerji ,  Nagraj Shankar

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L29/66545 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/28008 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/78 ,  H01L29/7845

Abstract: Various embodiments herein relate to formation of contact etch stop layers in the context of forming gates and contacts. In certain embodiments, a novel process flow is used, which may involve the deposition and removal of a sacrificial pre-metal dielectric material before a particular contact etch stop layer is formed. An auxiliary contact etch stop layer may be used in addition to a primary etch stop layer that is deposited previously. In certain cases the contact etch stop layer is a metal-containing material such as a nitride or an oxide. The contact etch stop layer may be deposited through a cyclic vapor deposition in some embodiments. The process flows disclosed herein provide improved protection against over-etching gate stacks, thereby minimizing gate-to-contact leakage. Further, the disclosed process flows result in wider flexibility in terms of materials and deposition conditions used for forming various dielectric materials, thereby minimizing parasitic capacitance.

Abstract translation: 本文的各种实施例涉及在形成栅极和触点的上下文中形成接触蚀刻停止层。 在某些实施例中，使用新的工艺流程，其可以涉及在形成特定的接触蚀刻停止层之前沉积和去除牺牲预金属介电材料。 除了先前沉积的原始蚀刻停止层之外，还可以使用辅助接触蚀刻停止层。 在某些情况下，接触蚀刻停止层是含金属的材料，例如氮化物或氧化物。 在一些实施方案中，接触蚀刻停止层可通过环状气相沉积沉积。 本文公开的工艺流程提供了改进的防蚀蚀栅极堆叠的保护，从而最小化了栅极 - 接触泄漏。 此外，所公开的工艺流程在用于形成各种介电材料的材料和沉积条件方面产生更大的灵活性，从而最小化寄生电容。

公开(公告)号：US20150221542A1

公开(公告)日：2015-08-06

申请号：US14171483

申请日：2014-02-03

Applicant: Lam Research Corporation

Inventor： Thomas Joseph Knisley ,  Nagraj Shankar ,  Pramod Subramonium

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/18 ,  H01L23/532 ,  H01L21/268

CPC classification number: C23C16/04 ,  C23C16/0209 ,  C23C16/0263 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for selective deposition of cobalt on copper lines in the presence of exposed dielectric in semiconductor processing are provided. Cobalt in its metallic form is selectively deposited onto copper in the presence of dielectric by contacting a prepared surface of the substrate with an organometallic cobalt compound in a presence of a reducing agent. Surface preparation involves H2 treatment with concurrent UV light irradiation. After the substrate surface is prepared, the substrate is contacted with an organometallic cobalt compound comprising a substituted or unsubstituted allyl ligand in a presence of a reducing agent to selectively deposit cobalt on copper. No plasma treatment during or after cobalt deposition is necessary, and the method can be used in a presence of a ULK dielectric without causing damage to dielectric. Deposited cobalt caps are used to reduce copper electromigration and to improve adhesion of copper to subsequently deposited layers.

Abstract translation: 提供了在半导体处理中在暴露的电介质存在下在铜线上选择性沉积钴的方法和装置。 通过在还原剂的存在下使基材的制备表面与有机金属钴化合物接触，将金属形式的钴选择性地沉积在铜上。 表面处理涉及同时进行紫外光照射的H2处理。 在制备基材表面之后，在还原剂存在下使基材与包含取代或未取代的烯丙基配体的有机金属钴化合物接触，以选择性地在铜上沉积钴。 在钴沉积期间或之后不需要等离子体处理，并且该方法可以在存在ULK电介质的情况下使用而不会损坏电介质。 沉积的钴盖用于减少铜电迁移并改善铜对随后沉积层的粘附。

公开(公告)号：US20240387258A1

公开(公告)日：2024-11-21

申请号：US18785926

申请日：2024-07-26

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Bart J. Van Schravendijk ,  Mark Naoshi Kawaguchi ,  Gereng Gunawan ,  Jay E. Uglow ,  Nagraj Shankar ,  Gowri Channa Kamarthy ,  Kevin M. McLaughlin ,  Ananda K. Banerji ,  Jialing Yang ,  John Hoang ,  Aaron Lynn Routzahn ,  Nathan Musselwhite ,  Meihua Shen ,  Thorsten Bernd Lill ,  Hao Chi ,  Nicholas Dominic Altieri

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L29/788 ,  H10B41/20 ,  H10B41/35

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

公开(公告)号：US20220372619A1

公开(公告)日：2022-11-24

申请号：US17874188

申请日：2022-07-26

Applicant: LAM RESEARCH CORPORATION

Inventor： Damodar Rajaram Shanbhag ,  Nagraj Shankar

IPC: C23C16/455 ,  C23C16/52 ,  F16K27/00 ,  H01J37/32

Abstract: Various embodiments include an apparatus to supply gases to a tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a chamber of the tool. The manifold body has multiple gas outlet ports. A purge-gas outlet port of the manifold body is directed substantially toward the outlet ports. For each of multiple gases to be input to the POU-valve manifold, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a gas supply and has a separate gas flow path internal to the manifold body and separate from remaining ones of the gas flow paths. The divert valve diverts the gas during a period when the precursor gas is not to be directed into the chamber by the first valve. Other examples are disclosed.

公开(公告)号：US20200251384A1

公开(公告)日：2020-08-06

申请号：US16852119

申请日：2020-04-17

Applicant: Lam Research Corporation

Inventor： Meliha Gozde Rainville ,  Nagraj Shankar ,  Kapu Sirish Reddy ,  Dennis M. Hausmann

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/52 ,  H01L23/532 ,  C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C22/05

Abstract: Aluminum oxide films with a thickness of between about 10-50 Å, characterized by a dielectric constant (k) of less than about 7 (such as about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over a metal (e.g., cobalt or copper) such that the metal does not show signs of oxidation. In some embodiments, the films are etch stop films.