公开(公告)号：US10431513B2

公开(公告)日：2019-10-01

申请号：US15583826

申请日：2017-05-01

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Dalson Ye ,  Chin Hui Chong ,  Choon Kuan Lee ,  Wang Lai Lee ,  Roslan Bin Said

IPC: H01L25/10 ,  H01L25/11 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L25/00 ,  H01L21/58 ,  H01L21/60 ,  H01L23/00

Abstract: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.

公开(公告)号：US20170301598A1

公开(公告)日：2017-10-19

申请号：US15583826

申请日：2017-05-01

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Dalson Ye ,  Chin Hui Chong ,  Choon Kuan Lee ,  Wang Lai Lee ,  Roslan Bin Said

IPC: H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L25/10 ,  H01L25/11 ,  H01L23/498

CPC classification number: H01L23/3128 ,  H01L21/561 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/00 ,  H01L25/105 ,  H01L25/117 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/16055 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.

公开(公告)号：US09721874B2

公开(公告)日：2017-08-01

申请号：US13747116

申请日：2013-01-22

Applicant: Micron Technology, Inc.

Inventor： Ai Chie Wang ,  Choon Kuan Lee ,  Chin Hui Chong ,  Wuu Yean Tay

IPC: H01L21/00 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L23/495 ,  H01L23/49506 ,  H01L23/4951 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: Pre-encapsulated lead frames suitable for use in microelectronic device packages are disclosed. Individual lead frames can include a set of multiple lead fingers arranged side by side with neighboring lead fingers spaced apart from each other by a corresponding gap. An encapsulating compound at least partially encapsulates the set of lead fingers without encapsulating a microelectronic device. The encapsulating compound can generally fill the plurality of gaps between two adjacent lead fingers.

公开(公告)号：US20170103961A1

公开(公告)日：2017-04-13

申请号：US15388166

申请日：2016-12-22

Applicant: Micron Technology, Inc.

Inventor： Choon Kuan Lee ,  Chin Hui Chong ,  David J. Corisis

IPC: H01L23/00 ,  H01L23/48

CPC classification number: H01L24/29 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/29005 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member, a first die attached to the support member, and a second die attached to the first die in a stacked configuration. The device can also include an attachment feature between the first and second dies. The attachment feature can be composed of a dielectric adhesive material. The attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.

公开(公告)号：US09362141B2

公开(公告)日：2016-06-07

申请号：US13898004

申请日：2013-05-20

Applicant: Micron Technology, Inc.

Inventor： David J. Corisis ,  Chin Hui Chong ,  Choon Kuan Lee

IPC: H01L21/58 ,  H01L21/56 ,  H01L25/065 ,  H01L25/11 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10 ,  H01L21/66

CPC classification number: H01L23/053 ,  H01L21/56 ,  H01L21/561 ,  H01L22/10 ,  H01L23/3128 ,  H01L23/3178 ,  H01L23/49805 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/4911 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2225/06503 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1064 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1627 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: Stacked microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a stacked microelectronic device assembly can include a first known good packaged microelectronic device including a first interposer substrate. A first die and a first through-casing interconnects are electrically coupled to the first interposer substrate. A first casing at least partially encapsulates the first device such that a portion of each first interconnect is accessible at a top portion of the first casing. A second known good packaged microelectronic device is coupled to the first device in a stacked configuration. The second device can include a second interposer substrate having a plurality of second interposer pads and a second die electrically coupled to the second interposer substrate. The exposed portions of the first interconnects are electrically coupled to corresponding second interposer pads.

公开(公告)号：US09142427B2

公开(公告)日：2015-09-22

申请号：US14180567

申请日：2014-02-14

Applicant: Micron Technology, Inc.

Inventor： Chin Hui Chong ,  David J. Corisis ,  Choon Kuan Lee

IPC: H01L29/00 ,  H01L21/4763 ,  H01L21/48 ,  H01L23/50 ,  H01L23/00 ,  H01L49/02

CPC classification number: H01L21/4857 ,  H01L23/50 ,  H01L24/82 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

Abstract: A device is disclosed which includes an interposer, at least one capacitor formed at least partially within an opening formed in the interposer and an integrated circuit that is operatively coupled to the interposer. A method is disclosed which includes obtaining an interposer having at least one capacitor formed at least partially within an opening in the interposer and operatively coupling an integrated circuit to the interposer. A method is also disclosed which includes obtaining an interposer comprising a dielectric material, forming an opening in the interposer and forming a capacitor that is positioned at least partially within the opening.

Abstract translation: 公开了一种包括插入器的至少一个电容器，至少部分地形成在插入器中形成的开口内的至少一个电容器和可操作地耦合到插入器的集成电路。 公开了一种方法，其包括获得具有至少部分地在插入器中的开口内形成的至少一个电容器并且将集成电路可操作地耦合到插入器的插入器。 还公开了一种方法，其包括获得包括电介质材料的插入件，在插入器中形成开口并形成至少部分位于开口内的电容器。

公开(公告)号：US08975745B2

公开(公告)日：2015-03-10

申请号：US13893638

申请日：2013-05-14

Applicant: Micron Technology, Inc.

Inventor： David J. Corisis ,  Chin Hui Chong ,  Choon Kuan Lee

IPC: H01L23/498 ,  H01L23/24 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L23/49827 ,  H01L23/24 ,  H01L23/49816 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Packaged microelectronic devices recessed in support member cavities, and associated methods, are disclosed. Method in accordance with one embodiment includes positioning a microelectronic device in a cavity of a support member, with the cavity having a closed end with a conductive layer, and an opening through which the cavity is assessable. The microelectronic device can have bond sites, a first surface, and a second surface facing opposite from the first surface. The microelectronic device can be positioned in the cavity so that the second surface faces toward and is carried by the conductive layer. The method can further include electrically coupling the bond sites of the microelectronic device to the conductive layer. In particular embodiments, the microelectronic device can be encapsulated in the cavity without the need for a releasable tape layer to temporarily support the microelectronic device.

Abstract translation: 封装在支撑构件空腔中的微电子器件以及相关方法被公开。 根据一个实施例的方法包括将微电子器件定位在支撑构件的空腔中，其中空腔具有带有导电层的封闭端以及空腔可以评估的开口。 微电子器件可以具有接合位置，第一表面和与第一表面相对的第二表面。 微电子器件可以定位在空腔中，使得第二表面面向导电层并由导电层承载。 该方法还可以包括将微电子器件的键合位置电耦合到导电层。 在具体实施例中，微电子器件可以被封装在空腔中，而不需要可释放的带层来临时支撑微电子器件。

公开(公告)号：US20130292810A1

公开(公告)日：2013-11-07

申请号：US13933294

申请日：2013-07-02

Applicant: Micron Technology, Inc.

Inventor： Choon Kuan Lee ,  David J. Corisis ,  Chong Chin Hui

IPC: H05K1/11 ,  H01L23/495

CPC classification number: H05K1/113 ,  H01L23/3114 ,  H01L23/49524 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/20 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/30107 ,  Y10T29/49156 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for fabricating a chip-scale board-on-chip substrate, or redistribution element, includes forming conductive planes on opposite sides of a substrate. A first of the conductive planes includes two sets of bond fingers, conductive traces that extend from a first set of the bond fingers, and two sets of redistributed bond pads, including a first set to which the conductive traces lead. The second conductive plane includes conductive traces that extend from locations that are opposite from the second set of bond fingers toward locations that are opposite from the locations of the second set of redistributed bond pads. Conductive vias are formed through the second set of bond fingers to the conductive traces of the second conductive plane. In addition, conductive vias are also formed to electrically connect the conductive vias of the second conductive plane to their corresponding redistributed bond pads in the first conductive plane.

Abstract translation: 芯片级片上基板或再分配元件的制造方法包括在基板的相对侧上形成导电平面。 导电平面中的第一个包括两组键合指状物，从第一组键合指状物延伸的导电迹线和两组再分布的键合焊盘，包括导电迹线引导到的第一组。 第二导电平面包括从与第二组键合指状物相对的位置朝向与第二组再分布接合焊盘的位置相反的位置延伸的导电迹线。 导电通孔通过第二组接合指形成到第二导电平面的导电迹线。 此外，还形成导电通孔，以将第二导电平面的导电通孔与第一导电平面中相应的再分布接合焊盘电连接。

公开(公告)号：US20130252354A1

公开(公告)日：2013-09-26

申请号：US13898004

申请日：2013-05-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： David J. Corisis ,  Chin Hui Chong ,  Choon Kuan Lee

IPC: H01L21/56

CPC classification number: H01L23/053 ,  H01L21/56 ,  H01L21/561 ,  H01L22/10 ,  H01L23/3128 ,  H01L23/3178 ,  H01L23/49805 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/4911 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2225/06503 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1064 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1627 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: Stacked microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a stacked microelectronic device assembly can include a first known good packaged microelectronic device including a first interposer substrate. A first die and a first through-casing interconnects are electrically coupled to the first interposer substrate. A first casing at least partially encapsulates the first device such that a portion of each first interconnect is accessible at a top portion of the first casing. A second known good packaged microelectronic device is coupled to the first device in a stacked configuration. The second device can include a second interposer substrate having a plurality of second interposer pads and a second die electrically coupled to the second interposer substrate. The exposed portions of the first interconnects are electrically coupled to corresponding second interposer pads.

Abstract translation: 本文公开了堆叠的微电子器件和用于制造这种器件的方法。 在一个实施例中，堆叠的微电子器件组件可以包括包括第一插入器衬底的第一已知的良好封装的微电子器件。 第一管芯和第一穿通管互连件电耦合到第一插入器衬底。 第一壳体至少部分地封装第一装置，使得每个第一互连件的一部分在第一壳体的顶部可接近。 第二已知的良好封装的微电子器件以堆叠配置耦合到第一器件。 第二器件可以包括具有多个第二插入器焊盘的第二插入器衬底和与第二插入器衬底电耦合的第二管芯。 第一互连的暴露部分电耦合到对应的第二插入器焊盘。

公开(公告)号：US10593607B2

公开(公告)日：2020-03-17

申请号：US15145760

申请日：2016-05-03

Applicant: Micron Technology, Inc.

Inventor： Hong Wan Ng ,  Choon Kuan Lee ,  David J. Corisis ,  Chin Hui Chong

IPC: H01L23/18 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L23/373 ,  H01L21/78

Abstract: A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.