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    Method for Producing a Semiconductor Component and a Semiconductor Component
    21.
    发明申请
    Method for Producing a Semiconductor Component and a Semiconductor Component 有权
    用于制造半导体元件和半导体元件的方法

    公开(公告)号：US20160225953A1

    公开(公告)日：2016-08-04

    申请号：US15009736

    申请日：2016-01-28

    Applicant: OSRAM Opto Semiconductors GmbH ,  X-Celeprint Limited

    Inventor： Matthew Meitl ,  Christopher Bower ,  Tansen Varghese

    IPC: H01L33/22 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/22 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/382 ,  H01L33/465 ,  H01L2933/0033 ,  H01L2933/0058

    Abstract: A method for producing a plurality of semiconductor components and a semiconductor component is disclosed. In some embodiment, the method includes forming a semiconductor layer sequence, structuring the semiconductor layer sequence by forming trenches thereby structuring semiconductor bodies, applying an auxiliary substrate on the semiconductor layer sequence, so that the semiconductor layer sequence is arranged between the auxiliary substrate and the substrate and removing the substrate from the semiconductor layer sequence. The method further comprises applying an anchoring layer covering the trench and vertical surfaces of the semiconductor bodies, forming a plurality of tethers by structuring the anchoring layer in regions covering the trench, locally detaching the auxiliary substrate from the semiconductor bodies, wherein the tethers remain attached to the auxiliary substrate and selectively picking up a semiconductor body by separating the tethers from the auxiliary substrate, the semiconductor body including a portion of the layer sequence.

    Abstract translation: 公开了一种用于制造多个半导体部件和半导体部件的方法。 在一些实施例中，该方法包括形成半导体层序列，通过形成沟槽从而构成半导体体，构成半导体层序列，在半导体层序列上施加辅助衬底，使得半导体层序列被布置在辅助衬底和 衬底并从半导体层序列移除衬底。 该方法还包括施加覆盖半导体主体的沟槽和垂直表面的锚定层，通过在覆盖沟槽的区域中构造锚定层形成多个系绳，将辅助衬底局部地从半导体主体分离，其中系链保持连接 并且通过从辅助基板分离系绳来选择性地拾取半导体本体，半导体主体包括层序列的一部分。

    Component with reduced absorption and method for producing a component
    23.
    发明授权
    Component with reduced absorption and method for producing a component 有权

    公开(公告)号：US12057522B2

    公开(公告)日：2024-08-06

    申请号：US17632892

    申请日：2020-07-23

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Tansen Varghese ,  Petrus Sundgren

    IPC: H01L33/08 ,  H01L33/00 ,  H01L33/62

    CPC classification number: H01L33/08 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0066

    Abstract: Disclosed is method for making a component and a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.

    Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
    26.
    发明授权
    Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component 有权

    公开(公告)号：US10910538B2

    公开(公告)日：2021-02-02

    申请号：US16476863

    申请日：2018-01-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tansen Varghese

    IPC: H01L33/62 ,  H01L25/075 ,  H01L33/08 ,  H01L33/00

    Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a plurality of active regions configured to emit electromagnetic radiation, wherein the active regions are arranged spaced apart from each other, wherein the active regions have a main extension direction, wherein each active region has a core region, an active layer covering the core region at least in directions transverse to the main extension direction, wherein each active region has a cover layer covering the active layer at least in directions transverse to the main extension direction, wherein each active region has a current spreading layer at least partly covering sidewalls of each respective active region, and wherein a metal layer directly adjoins parts of the active regions and parts of the current spreading layers.

    Optoelectronic Device
    27.
    发明申请
    Optoelectronic Device 审中-公开

    公开(公告)号：US20190259920A1

    公开(公告)日：2019-08-22

    申请号：US16332964

    申请日：2017-09-07

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tansen Varghese ,  David O'Brien ,  Georg Roßbach

    IPC: H01L33/50 ,  H01L33/62

    Abstract: An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.

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