SEPARATION APPARATUS FOR THIN FILM STACKED BODY
    23.
    发明申请
    SEPARATION APPARATUS FOR THIN FILM STACKED BODY 审中-公开
    薄膜堆叠体的分离装置

    公开(公告)号:US20150319893A1

    公开(公告)日:2015-11-05

    申请号:US14696525

    申请日:2015-04-27

    IPC分类号: H05K13/04 B32B38/10 B32B43/00

    摘要: A separation apparatus (1) for separating a thin-film flexible stacked body (3) from a component (16) where the thin-film flexible stacked body (3) including an element layer is formed over a rigid substrate (2) such as a glass substrate, a quartz substrate, a ceramic substrate, or a metal substrate is provided. The separation apparatus (1) mainly includes a fixing device (10) for fixing the substrate (2) of the component (16), suction jigs (11) for lifting the flexible stacked body (3) by suction to be separated, circular suction pads (13) that are brought into direct contact with the flexible stacked body (3) and attached to the flexible stacked body (3) by suction, and clamp jigs (9) for holding an edge of the flexible stacked body (3). A position sensor such as a laser measuring instrument for measuring or monitoring a separation state of the flexible stacked body may be used together.

    摘要翻译: 一种用于将薄膜柔性层叠体(3)从包括元件层的薄膜柔性层叠体(3)的部件(16)分离的分离装置(1)形成在刚性基板(2)上,例如 玻璃基板,石英基板,陶瓷基板或金属基板。 分离装置(1)主要包括用于固定部件(16)的基板(2)的固定装置(10),用于通过抽吸提升柔性堆叠体(3)以分离的吸入夹具(11),圆形抽吸 与柔性层叠体(3)直接接触并通过抽吸附接到柔性层叠体(3)的垫(13)和用于保持柔性层叠体(3)的边缘的夹具(9)。 可以一起使用诸如用于测量或监测柔性层叠体的分离状态的激光测量仪器的位置传感器。

    FILM SUCTION MECHANISM
    24.
    发明申请
    FILM SUCTION MECHANISM 有权
    电影吸引机制

    公开(公告)号:US20150314456A1

    公开(公告)日:2015-11-05

    申请号:US14699614

    申请日:2015-04-29

    IPC分类号: B25J15/06 B25J11/00

    摘要: A film suction mechanism is provided which can prevent a film-like member from warping or sagging for reliable suction, handing over, or the like of the film-like member. A film suction mechanism of the present invention is a film suction mechanism for processing or transferring a flexible film-like member. The film suction mechanism includes a suction unit having a function of attaching the film-like member thereto by suction and an air nozzle having a function of blowing pressurized air onto a first surface of the film-like member. The suction unit includes a plurality of suction pads. The suction unit is capable of attaching a second surface of the film-like member thereto by suction while the pressurized air is blown onto the first surface of the film-like member.

    摘要翻译: 提供了一种胶片吸引机构,其可以防止膜状构件翘曲或下垂以获得膜状构件的可靠抽吸,移交等。 本发明的吸膜机构是用于加工或转移柔性膜状部件的膜吸引机构。 薄膜抽吸机构包括具有通过抽吸将薄膜状构件附接到其上的功能的抽吸单元和具有将加压空气吹送到薄膜状构件的第一表面上的功能的空气喷嘴。 抽吸单元包括多个吸盘。 抽吸单元能够通过抽吸将薄膜状构件的第二表面附着在压力空气吹到薄膜状构件的第一表面上。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

    公开(公告)号:US20220102534A1

    公开(公告)日:2022-03-31

    申请号:US17427236

    申请日:2020-02-06

    摘要: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. A method for fabricating the semiconductor device includes a step of forming a semiconductor layer including a metal oxide; a step of forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; a step of performing plasma treatment using a mixed gas including an oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; a step of forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and a step of forming a second insulating layer over the first insulating layer. The first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a gas containing silicon, an oxidizing gas, and an ammonia gas. The first insulating layer is formed successively after the plasma treatment without exposure to the air.

    Fabrication Method of Semiconductor Device and Semiconductor Device

    公开(公告)号:US20220013754A1

    公开(公告)日:2022-01-13

    申请号:US17479329

    申请日:2021-09-20

    IPC分类号: H01L51/56 H01L51/00 H01L51/52

    摘要: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
    A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.