公开(公告)号：US20050057164A1

公开(公告)日：2005-03-17

申请号：US10951049

申请日：2004-09-27

申请人： Toshiaki Kitamura ,  Koichi Rokuyama ,  Shigeru Kasai ,  Takashi Ogino ,  Yuki Osada

发明人： Toshiaki Kitamura ,  Koichi Rokuyama ,  Shigeru Kasai ,  Takashi Ogino ,  Yuki Osada

IPC分类号： H01J37/32 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32183 ,  H01P5/026 ,  H01P5/04

摘要： A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

摘要翻译： 等离子体产生方法通过控制高频发生单元产生高频信号并通过阻抗匹配装置将高频信号馈送到处理室来在处理室中产生等离子体。 等离子体产生方法包括当在处理室中产生等离子体时，控制阻抗匹配装置，以便满足预设的匹配条件，然后控制高频产生单元以产生和馈送高频信号 产生等离子体的功率到处理室。

公开(公告)号：US06436193B1

公开(公告)日：2002-08-20

申请号：US09534342

申请日：2000-03-24

申请人： Shigeru Kasai ,  Teruo Iwata ,  Taro Komiya ,  Tomihiro Yonenaga

发明人： Shigeru Kasai ,  Teruo Iwata ,  Taro Komiya ,  Tomihiro Yonenaga

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/3244

摘要： A gas processing apparatus is disclosed, that comprises a processing chamber that is airtightly structured, a gas delivery pipe connected to the processing chamber, a gas supply source for supplying gas to the processing chamber through the gas delivery pipe, a holding table for holding a workpiece loaded to the processing chamber, a shower member disposed at a gas outlet of the gas delivery pipe connected to the processing chamber, a spray plate structured as a partition wall of the shower member that faces the holding plate, the spray plate having a plurality of spray holes, and a baffle member disposed between the spray plate in the shower member and the gas outlet and having a plurality of through-holes formed perpendicular to the surface of the baffle member, wherein each of the through-holes of the baffle member has a first opening portion and a second opening portion facing the gas outlet, the second opening portion facing the spray plate, the opening area of the second opening portion being larger than the opening portion of the first opening portion. Thus, a gas processing apparatus and a gas processing method that allow gas to be uniformly supplied to the entire surface of a workpiece are provided. In addition, a baffle member for use with the gas processing apparatus and the gas processing method is provided.

摘要翻译： 公开了一种气体处理装置，其包括气密结构的处理室，连接到处理室的气体输送管，用于通过气体输送管向处理室供应气体的气体供给源，用于保持 装载到处理室的工件，设置在连接到处理室的气体输送管的气体出口处的喷淋构件，构成为与保持板相对的淋浴构件的分隔壁的喷射板，喷射板具有多个 的喷孔，以及设置在淋浴构件中的喷射板和气体出口之间的挡板构件，并且具有垂直于挡板构件的表面形成的多个通孔，其中挡板构件的每个通孔 具有面向气体出口的第一开口部分和第二开口部分，面向喷射板的第二开口部分，第二开口的开口区域 部分大于第一开口部分的开口部分。 因此，提供了允许气体均匀地供应到工件的整个表面的气体处理装置和气体处理方法。 此外，提供了一种与气体处理装置一起使用的挡板部件和气体处理方法。

公开(公告)号：US09543123B2

公开(公告)日：2017-01-10

申请号：US13435552

申请日：2012-03-30

申请人： Taro Ikeda ,  Tomohito Komatsu ,  Shigeru Kasai

发明人： Taro Ikeda ,  Tomohito Komatsu ,  Shigeru Kasai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/455 ,  H05H1/46 ,  C23C16/511

CPC分类号： H01J37/3222 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449 ,  H05H1/46 ,  H05H2001/463

摘要： A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.

摘要翻译： 等离子体发生天线和等离子体处理装置可以有效地提供气体和电磁波。 等离子体处理装置10包括其中执行等离子体处理的处理室100; 构造成透射电磁波的波长缩短板480; 以及等离子体产生天线200，其具有与波长缩短板480相邻设置的淋浴喷头210.喷头210由导体制成，并具有多个气孔215和多个槽220，电磁 波通。 槽220设置在与气孔215隔开的位置处。

公开(公告)号：US20120328273A1

公开(公告)日：2012-12-27

申请号：US13524023

申请日：2012-06-15

申请人： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

发明人： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC分类号： H05B6/00

CPC分类号： H01L21/67115 ,  H05B3/0033

摘要： Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.

摘要翻译： 公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。 通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。 由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。 结果，可以减少热处理装置的安装面积。 由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。

公开(公告)号：US20120287526A1

公开(公告)日：2012-11-15

申请号：US13574141

申请日：2011-01-20

申请人： Shigeru Kasai ,  Yasuhiro Sasaki ,  Hiroshi Sakai

发明人： Shigeru Kasai ,  Yasuhiro Sasaki ,  Hiroshi Sakai

IPC分类号： G11B27/36

CPC分类号： G11B20/10009 ,  G11B19/048 ,  G11B20/10027 ,  G11B20/10314 ,  G11B20/1816 ,  G11B27/36 ,  G11B2220/2516

摘要： A breakdown prediction device of the present invention includes: a vibration measurement unit that measures vibrations generated from a device being monitored; and a signal processing unit that performs breakdown prediction when a specific vibration is measured at the vibration measurement unit, a maximum vibration amplitude value of the vibration exceeding an upper limit vibration amplitude threshold, and a vibration amplitude value thereof being below a lower limit vibration amplitude threshold at a point in time when a specified time is reached from a point in time when the vibration exceeds the upper limit vibration amplitude threshold.

摘要翻译： 本发明的故障预测装置包括：振动测量单元，其测量从被监视的设备产生的振动; 以及信号处理单元，其在所述振动测量单元处测量特定振动时执行击穿预测，所​​述振动的最大振动振幅值超过上限振幅阈值，并且其振动振幅值低于下限振幅 在振动超过上限振幅阈值的时间点达到指定时间的时间点的阈值。

公开(公告)号：US20120247390A1

公开(公告)日：2012-10-04

申请号：US13496794

申请日：2010-08-30

申请人： Ikuo Sawada ,  Song Yun Kang ,  Masaaki Matsukuma ,  Shigeru Kasai ,  Masato Morishima

发明人： Ikuo Sawada ,  Song Yun Kang ,  Masaaki Matsukuma ,  Shigeru Kasai ,  Masato Morishima

IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/511

CPC分类号： C23C16/4412 ,  C23C16/452 ,  C23C16/45502 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32633

摘要： Disclosed is a film formation apparatus (1a) that forms a thin film upon a substrate (S), wherein partitions (41) separate the space above the substrate (S) into a plasma generation space (401) and an exhaust space (402) and extend downward from the ceiling of the processing container (10) to form an opening between the substrate (S) and the bottom end of the partitions, in which gas flows from the plasma generation space (401) to the exhaust space (402). An activating mechanism (42, 43) generates plasma by activating a first reactant gas that has been supplied to the plasma generation space (401). A second reactant gas supply section (411, 412) supplies a second reactant gas to the bottom of the plasma generation space (401), and an evacuation opening (23) evacuates the exhaust space (402) from a position that is higher than the bottom end of the partitions (41).

摘要翻译： 公开了一种在基板（S）上形成薄膜的成膜装置（1a），其中隔板（41）将基板（S）上方的空间分离成等离子体产生空间（401）和排气空间（402） 并且从处理容器（10）的天花板向下延伸，以形成基板（S）和分隔壁的底端之间的开口，其中气体从等离子体产生空间（401）流到排气空间（402） 。 激活机构（42,43）通过激活已经供应到等离子体产生空间（401）的第一反应气体产生等离子体。 第二反应气体供给部（411,412）将第二反应气体供给到等离子体产生空间（401）的底部，排气口（23）将排气空间（402）从高于 分区（41）的底端。

公开(公告)号：US20120211486A1

公开(公告)日：2012-08-23

申请号：US13399163

申请日：2012-02-17

申请人： Shigeru Kasai ,  Ryoji Yamazaki ,  Mitsutoshi Ashida ,  Yuji Obata ,  Sumi Tanaka

发明人： Shigeru Kasai ,  Ryoji Yamazaki ,  Mitsutoshi Ashida ,  Yuji Obata ,  Sumi Tanaka

IPC分类号： H05B6/66 ,  H05B6/64

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H05B6/806

摘要： There is provided a microwave irradiation apparatus capable of independently controlling a temperature of a target object while irradiating microwave to the target object. The microwave irradiation apparatus 2 includes a processing chamber 4 configured to be vacuum-evacuated; a supporting table 6 configured to support the target object; a processing gas introduction unit 106 configured to introduce a processing gas into the processing chamber; a microwave introduction unit 72 configured to introduce the microwave into the processing chamber; a heating unit 16 configured to heat the target object; a gas cooling unit 104 configured to cool the target object by a cooling gas; a radiation thermometer 64 configured to measure a temperature of the target object; and a temperature control unit 70 configured to adjust the temperature of the target object by controlling the heating unit and the gas cooling unit based on the temperature measured by the radiation thermometer.

摘要翻译： 提供了一种能够在向目标物体照射微波的同时独立地控制目标物体的温度的微波照射装置。 微波照射装置2包括被真空抽真空的处理室4。 配置为支撑目标物体的支撑台6; 处理气体导入单元106，被配置为将处理气体引入到处理室中; 微波引入单元72，被配置为将微波引入处理室; 配置为加热目标物体的加热单元16; 构造成通过冷却气体对目标物体进行冷却的气体冷却单元104; 被配置为测量目标物体的温度的辐射温度计64; 以及温度控制单元70，其被配置为基于由辐射温度计测量的温度来控制加热单元和气体冷却单元来调节目标物体的温度。

公开(公告)号：US08246900B2

公开(公告)日：2012-08-21

申请号：US12440034

申请日：2007-08-31

申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

IPC分类号： H01L21/26 ,  C21D1/74

CPC分类号： H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

摘要翻译： 提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

公开(公告)号：US20120160274A1

公开(公告)日：2012-06-28

申请号：US13334406

申请日：2011-12-22

申请人： Shigeru Kasai ,  Ayuta Suzuki ,  Ikuo Sawada ,  Naoki Shindo ,  Masatake Yoneda ,  Kazuhiro Ooya

发明人： Shigeru Kasai ,  Ayuta Suzuki ,  Ikuo Sawada ,  Naoki Shindo ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC分类号： B08B3/00

CPC分类号： H01L21/67115 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67051

摘要： Disclosed is a liquid processing apparatus that processes a substrate with a processing liquid. The processing apparatus includes: a substrate holder configured to hold the substrate; a processing liquid supply unit configured to supply the processing liquid to the substrate held by the substrate holder; a rinsing liquid supply unit configured to supply a rinsing liquid to the substrate; and a light emitting element configured to emit light of a wavelength range, which is absorbed only by the substrate, and irradiate the emitted light to the substrate.

摘要翻译： 公开了一种用处理液处理基板的液体处理装置。 所述处理装置包括：基板保持器，其构造成保持所述基板; 处理液供给部，其将处理液供给到由所述基板保持体保持的基板; 冲洗液体供给单元，其配置为向所述基板供给冲洗液; 以及发光元件，被配置为发射仅被衬底吸收的波长范围的光，并将发射的光照射到衬底。

公开(公告)号：US20110240222A1

公开(公告)日：2011-10-06

申请号：US13129541

申请日：2009-11-17

申请人： Ikuo Sawada ,  Songyun Kang ,  Shigeru Kasai

发明人： Ikuo Sawada ,  Songyun Kang ,  Shigeru Kasai

IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32174

摘要： A gas shower head having many gas discharging ports formed on the lower surface is provided on the top wall of a processing container such that the gas shower head faces a placing table on which a substrate is to be placed, and the top wall of the processing container at the periphery of the gas shower head is composed of a dielectric material. A coil is provided on the dielectric material, and the phase of high frequency waves to be supplied to the gas shower head and the coil is adjusted so that the phase of the electrical field in a processing region above the substrate and the phase of the electrical field in the peripheral region surrounding the processing region are same or opposite to each other.

摘要翻译： 具有形成在下表面上的许多排气口的气体喷头设置在处理容器的顶壁上，使得气体喷淋头面对要放置基板的放置台，并且处理的顶壁 气体喷头的外围的容器由电介质材料构成。 在电介质材料上设置线圈，调整供给到燃气喷头和线圈的高频相位，使得在基板上方的处理区域内的电场相位和电气相位 围绕处理区域的周边区域中的场相同或相反。