公开(公告)号：US20230091737A1

公开(公告)日：2023-03-23

申请号：US17994841

申请日：2022-11-28

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Chien-Hsun Chen ,  Yu-Min Liang ,  Yen-Ping Wang ,  Jiun Yi Wu ,  Chen-Hua Yu ,  Kai-Chiang Wu

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/522 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768

Abstract: Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.

公开(公告)号：US11239096B2

公开(公告)日：2022-02-01

申请号：US16991010

申请日：2020-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chiang Wu ,  Chung-Hao Tsai ,  Chun-Lin Lu ,  Yen-Ping Wang ,  Che-Wei Hsu

IPC: H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

公开(公告)号：US20210184335A1

公开(公告)日：2021-06-17

申请号：US16997958

申请日：2020-08-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ping Wang ,  Chun-Lin Lu ,  Han-Ping Pu ,  Kai-Chiang Wu ,  Chung-Yi Hsu

IPC: H01Q1/22 ,  H01L23/66 ,  H01L23/31 ,  H01Q9/04

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes: patch antennas, encapsulated by a first encapsulant; a device die, vertically spaced apart from the patch antennas, and electrically coupled to the patch antennas; and at least one redistribution structure, disposed between the patch antennas and the device die, and including electromagnetic bandgap (EBG) structures laterally surrounding each of the patch antennas.

公开(公告)号：US10770313B2

公开(公告)日：2020-09-08

申请号：US16389993

申请日：2019-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chiang Wu ,  Chung-Hao Tsai ,  Chun-Lin Lu ,  Yen-Ping Wang ,  Che-Wei Hsu

IPC: H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and a second redistribution structure. The first redistribution structure has a dielectric layer and a feed line disposed on the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The insulation encapsulation has a protrusion laterally wraps around the feed line. The insulation encapsulation has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The second redistribution structure is disposed on the die and the insulation encapsulation.

公开(公告)号：US09818722B1

公开(公告)日：2017-11-14

申请号：US15229711

申请日：2016-08-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chuei-Tang Wang ,  Kai-Chiang Wu ,  Chieh-Yen Chen ,  Yen-Ping Wang ,  Shou-Zen Chang

IPC: H01L25/065 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2225/06548 ,  H01L2225/06558 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2224/81

Abstract: A package structure includes a package, at least one first molding material, and at least one second semiconductor device. The package includes at least one first semiconductor device therein. The package has a top surface. The first molding material is present on the top surface of the package and has at least one opening therein, in which at least a region of the top surface of the package is exposed by the opening of the first molding material. The second semiconductor device is present on the top surface of the package and is molded in the first molding material.

公开(公告)号：US09559071B2

公开(公告)日：2017-01-31

申请号：US13927972

申请日：2013-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Chun-Lin Lu ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Yen-Ping Wang ,  Shih-Wei Liang ,  Ching-Feng Yang ,  Chia-Chun Miao ,  Hung-Jen Lin

IPC: H01L29/24 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/81 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/0554 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/11015 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/1601 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/17051 ,  H01L2224/17517 ,  H01L2224/81011 ,  H01L2224/81024 ,  H01L2224/81148 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/207 ,  H01L2924/014 ,  H01L2924/00012

Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.

Abstract translation: 提供了用于形成封装结构的机构的实施例。 封装结构包括半导体管芯和衬底。 封装结构包括柱状凸起和与半导体管芯和衬底结合的细长焊料凸块。 细长焊料凸块的高度基本上等于柱形凸块的高度。 细长的焊料凸块在通过细长焊料凸块的侧壁表面的上端的第一水平面处具有第一宽度，并且在通过侧壁表面的中点的第二水平面处具有第二宽度。 第二宽度与第一宽度的比率在约0.5至约1.1的范围内。