公开(公告)号：US07074624B2

公开(公告)日：2006-07-11

申请号：US10808417

申请日：2004-03-25

申请人： Koji Ohashi ,  Takeshi Kijima ,  Junichi Karasawa ,  Yasuaki Hamada ,  Eiji Natori

发明人： Koji Ohashi ,  Takeshi Kijima ,  Junichi Karasawa ,  Yasuaki Hamada ,  Eiji Natori

IPC分类号： H01L21/00 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/28273 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55

摘要： A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.

摘要翻译： 制造铁电体膜的方法包括使具有复合氧化物的原料结晶，该方法包括：在施加预定压力和预定温度的第一条件下进行热处理; 并且在第一状态下的热处理之后，保持其中施加压力和低于第一状态的温度的温度的第二条件，并且通过在第一状态下重复进行热处理使原料结晶 条件和维持第二个条件。

公开(公告)号：US07074548B2

公开(公告)日：2006-07-11

申请号：US10376253

申请日：2003-03-03

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： B05D3/00 ,  B05D3/06

CPC分类号： C23C18/1216 ,  B01J3/008 ,  B01J19/0013 ,  B01J19/123 ,  B01J19/125 ,  B01J19/1887 ,  B01J2219/00058 ,  B05D1/025 ,  B05D2401/90 ,  C23C18/12 ,  C23C18/1283 ,  C23C18/1287 ,  C23C18/14 ,  Y02P20/544

摘要： A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.

摘要翻译： 一种形成薄膜的方法，该薄膜包括从形成的薄膜和/或使用酒精形成薄膜的基板去除污染物的能力。 该方法包括允许衬底保持器支撑减法。 通过混合含有金属氧化物和醇的元素的缩聚物来制备第一混合物。 然后通过混合超临界流体或液体二氧化碳和第一混合物产生第二混合物。 通过将第二混合物施加到基板的表面上来形成薄膜。 在形成薄膜之后，通过将酒精施加到底部的上表面和下表面，优选整个上表面和下表面来清洁基底。 薄膜通过加热结晶，结晶可以包括在结晶室中施加氧气。 在衬底表面形成薄膜期间，可以将软X射线施加到衬底上。

公开(公告)号：US07031180B2

公开(公告)日：2006-04-18

申请号：US10807355

申请日：2004-03-24

申请人： Junichi Karasawa ,  Takeshi Kijima ,  Eiji Natori

发明人： Junichi Karasawa ,  Takeshi Kijima ,  Eiji Natori

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A method of reading data in a ferroelectric memory device includes applying a read voltage to a ferroelectric capacitor, and detecting a voltage that reflects an amount of a dynamic change in capacitance of the ferroelectric capacitor to which the read voltage is applied. Since a voltage difference ΔV occurs at a time T between the case where the polarization of a memory cell which has stored first data is not reversed and the case where the polarization of a memory cell which has stored second data is reversed, a read margin increases.

摘要翻译： 一种在铁电存储器件中读取数据的方法包括：向铁电电容器施加读取电压，并且检测反映施加了读取电压的铁电电容器的电容的动态变化量的电压。 由于在存储了第一数据的存储单元的极化不反转的情况下，在存储第二数据的存储单元的极化反转的情况下，在时刻T发生电压差DeltaV，读取余量增加 。

公开(公告)号：US20050253903A1

公开(公告)日：2005-11-17

申请号：US11130342

申请日：2005-05-16

申请人： Hiromu Miyazawa ,  Motohisa Noguchi ,  Takeshi Kijima

发明人： Hiromu Miyazawa ,  Motohisa Noguchi ,  Takeshi Kijima

IPC分类号： B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/16 ,  C04B35/49 ,  C04B35/491 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/319 ,  H01L41/39 ,  H02N2/00 ,  H03B5/30 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H01L41/1875 ,  B41J2/14233 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/318 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02031 ,  H03H9/02574 ,  H03H9/0542 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023

摘要： A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.

摘要翻译： 压电元件包括​​基底基板，形成在基底基板上的缓冲层，以及形成在缓冲层之上的压电膜，其中缓冲层由Pb（（Zr 1-x Ti） 其中x在0的范围内的钙钛矿型，其中x在0的范围内 <= x <= 1，y在0.05 <= y <0.3的范围内，并且压电膜由钙钛矿型的弛豫材料形成。

公开(公告)号：US20050236652A1

公开(公告)日：2005-10-27

申请号：US11108933

申请日：2005-04-19

申请人： Takeshi Kijima ,  Yasuaki Hamada

发明人： Takeshi Kijima ,  Yasuaki Hamada

IPC分类号： H01L41/09 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/49 ,  H01L29/51 ,  H01L29/745 ,  H01L29/76 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L41/187 ,  H01L41/318 ,  H01L41/39

CPC分类号： H01L21/28291 ,  H01L21/28167 ,  H01L29/495 ,  H01L29/516 ,  H01L29/78391

摘要： A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.

摘要翻译： MFS型场效应晶体管包括半导体层，形成在半导体层上的PZT系铁电层，形成在PZT系铁电层上的栅电极和构成源极或漏极的杂质层，形成在半导体层中。 PZT系铁电体层包含将Ti成分替换为2.5摩尔％以上且40摩尔％以下的Nb。

公开(公告)号：US20050078507A1

公开(公告)日：2005-04-14

申请号：US10932890

申请日：2004-09-02

申请人： Yasuaki Hamada ,  Takeshi Kijima ,  Eiji Natori

发明人： Yasuaki Hamada ,  Takeshi Kijima ,  Eiji Natori

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.

摘要翻译： 一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。 字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式 选自铁电存储单元的至少一个铁电存储单元。 字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印 存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

公开(公告)号：US06232167B1

公开(公告)日：2001-05-15

申请号：US08968938

申请日：1997-11-12

申请人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： H01L218242

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。

公开(公告)号：US06197600B1

公开(公告)日：2001-03-06

申请号：US09072359

申请日：1998-05-05

申请人： Takeshi Kijima ,  Maho Ushikubo ,  Hironori Matsunaga

发明人： Takeshi Kijima ,  Maho Ushikubo ,  Hironori Matsunaga

IPC分类号： H01L2100

CPC分类号： H01L28/56 ,  C23C16/40 ,  C23C16/407

摘要： A ferroelectric thin film includes: a bismuth oxide polycrystal thin film constituting a buffer layer, and a bismuth-based layered compound thin film represented by the formula: Bi2Am-1BmO3m+3 wherein A is an atom selected from the group consisting of Na, K, Pb, Ca, Sr, Ba and Bi; B is an atom selected from the group consisting of Fe, Ti, Nb, Ta, W and Mo; and m is an integer of 1 or more. The bismuth oxide polycrystal thin film and the bismuth-based layered compound thin film are formed into a single-phase.

摘要翻译： 铁电薄膜包括：构成缓冲层的氧化铋多晶薄膜和由式Bi2Am-1BmO3m + 3表示的铋基层状化合物薄膜，其中A是选自Na，K ，Pb，Ca，Sr，Ba和Bi; B是选自Fe，Ti，Nb，Ta，W和Mo的原子; m为1以上的整数。 氧化铋多晶薄膜和铋系层状化合物薄膜形成为单相。

公开(公告)号：US5811181A

公开(公告)日：1998-09-22

申请号：US449701

申请日：1995-05-24

申请人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba ,  Noboru Ohtani

发明人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba ,  Noboru Ohtani

IPC分类号： C01G49/00 ,  C01G29/00 ,  C23C16/40 ,  C23C16/56 ,  H01B3/02 ,  H01B3/10 ,  H01B3/12 ,  H01B17/60 ,  H01B19/00 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L41/39 ,  H01L49/02 ,  B32B17/00

CPC分类号： C23C16/40 ,  C23C16/56 ,  Y10T428/252 ,  Y10T428/256

摘要： A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi.sub.4 Ti.sub.3 O.sub.12 thin film manufactured on the titanium oxide buffer layer can be improved.

摘要翻译： 在低温下制造具有光滑表面和优异的铁电特性的紧密的a轴取向膜，并且以铁电Bi4Ti3O12的优点的再现性可以用于开发各种诸如铁电非易失性存储器，热电传感器等的器件。 通过氧化钛缓冲层在基板上形成铁电Bi4Ti3O12薄膜，可以提高在氧化钛缓冲层上制造的Bi 4 Ti 3 O 12薄膜的接近度和表面平滑性。

公开(公告)号：US20140191618A1

公开(公告)日：2014-07-10

申请号：US14123138

申请日：2011-06-07

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： H01L41/257 ,  B23K10/00 ,  H01L21/324

CPC分类号： H01L41/257 ,  B23K10/003 ,  H01L21/324 ,  Y10T29/42

摘要： A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

摘要翻译： 一种等离子体极化装置，包括：保持电极（4），其设置在极化室（1）中并保持待极化的基板（2）;相对电极（7），设置在所述极化室中并面向所述基板 被保持在保持电极上，电连接到保持电极和相对电极的一个电极的电源（6），将等离子体形成气体供给到相对电极和保持电极之间的空间中的气体供给机构， 以及控制电源和气体供给机构的控制单元。 控制单元控制电源和气体供给机构，以在面向要极化的基板的位置处形成等离子体，并对待极化的基板进行极化处理。