公开(公告)号：US06938486B2

公开(公告)日：2005-09-06

申请号：US10899729

申请日：2004-07-27

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: B81B7/00 ,  C07C303/32 ,  C07C303/44 ,  C07C309/17 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/125

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

公开(公告)号：US06787866B2

公开(公告)日：2004-09-07

申请号：US10091497

申请日：2002-03-07

Applicant: Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

Inventor： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC: H01L2984

CPC classification number: H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract translation: 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US5442223A

公开(公告)日：1995-08-15

申请号：US225924

申请日：1994-04-11

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: H01L21/762 ,  H01L21/76 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L21/76264 ,  H01L21/763 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76286

Abstract: An SOI-type semiconductor device in which electrical elements formed on one semiconductor substrate are isolated from each other by an insulating film and a shield layer, to ensure a stable operation of the electrical elements against electrical noise etc., and at the same time, a stress relief film is formed between the insulating film and the shield layer to ensure that an SOI layer is stabilized by being free from crystal defects. A process for producing same is also disclosed.

Abstract translation: 一种SOI型半导体器件，其中形成在一个半导体衬底上的电气元件通过绝缘膜和屏蔽层彼此隔离，以确保电气元件抵抗电气噪声等的稳定操作，同时， 在绝缘膜和屏蔽层之间形成应力消除膜，以确保通过没有晶体缺陷来使SOI层稳定。 还公开了其制造方法。

公开(公告)号：US4891984A

公开(公告)日：1990-01-09

申请号：US917103

申请日：1986-10-08

Applicant: Tetsuo Fujii ,  Osamu Itoh

Inventor： Tetsuo Fujii ,  Osamu Itoh

IPC: H01L29/84 ,  G01P15/08 ,  G01P15/12 ,  G01P15/18

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/0828

Abstract: First to third frames are formed by etching to penetrate a silicon substrate on the substrate. A plurality of thin cantilevered beams are formed in different lengths by cutting by etching the substrate in the frames; the beams formed in the first frame are formed perpendicular to the surface of the substrate to bend only in the X-axis direction, parallel to the surface of the substrate; the beams formed in the second frame are formed perpendicular to the surface of the substrate to bend only in the Y-axis direction, parallel to the surface of the substrate; and the beams formed in the third frame are formed to bend only in the Z-axis direction, perpendicular to the surface of the substrate. Masses are formed at the free ends of the beams, and piezo resistance layers are formed at the fixed ends. Signals generated from the piezo resistance layers by an integrated circuit are supplied to the regions, different from the regions formed of the first to third frames, of the substrate to form a signal processor for generating acceleration detection signals.

Abstract translation: 通过蚀刻形成第一至第三框架以穿透基板上的硅衬底。 通过在框架中蚀刻基板来切割多个薄的悬臂梁，形成不同的长度; 形成在第一框架中的梁垂直于基板的表面形成，仅在平行于基板的表面的X轴方向上弯曲; 形成在第二框架中的梁垂直于基板的表面形成，仅在平行于基板的表面的Y轴方向上弯曲; 并且形成在第三框架中的梁形成为仅在垂直于基板的表面的Z轴方向上弯曲。 在梁的自由端处形成质量，在固定端形成压电电阻层。 通过集成电路从压电电阻层产生的信号被提供给与基板的第一至第三框形成的区域不同的区域，以形成用于产生加速度检测信号的信号处理器。

公开(公告)号：US4870146A

公开(公告)日：1989-09-26

申请号：US214000

申请日：1988-06-30

Applicant: Yasushi Sakai ,  Tetsuo Fujii ,  Michio Saito ,  Motoaki Munekata ,  Akio Kiyohara

Inventor： Yasushi Sakai ,  Tetsuo Fujii ,  Michio Saito ,  Motoaki Munekata ,  Akio Kiyohara

IPC: C08F240/00

CPC classification number: C08F240/00

Abstract: A process for producing a light color high softening point hydrocarbon resin, which comprises polymerizing an oil fraction obtained by condensing a fractionated component withdrawn in a gas phase from a recovery section of a fractionating tower located below the feeding section and above the bottom of the tower during the fractional distillation in the tower of a feed oil fraction having a boiling point within a range of from 140.degree. to 280.degree. C. selected among cracked oil fractions obtained by thermal cracking of petroleum.

Abstract translation: 一种浅色高软化点烃树脂的制造方法，其特征在于，使从所述供给部位于所述供给部下方的分馏塔的回收部冷凝而从所述气相中取出的分馏成分冷凝而得到的油馏分， 在沸点为140-280℃的进料油馏分的塔中进行分馏，选自通过石油热裂解获得的裂化油馏分中。

公开(公告)号：US4867561A

公开(公告)日：1989-09-19

申请号：US87168

申请日：1987-08-18

Applicant: Tetsuo Fujii ,  Hirohito Shioya ,  Tiaki Mizuno ,  Tadashi Kamada ,  Yasuaki Makino ,  Yoshimi Yoshino ,  Seiichiro Otake

Inventor： Tetsuo Fujii ,  Hirohito Shioya ,  Tiaki Mizuno ,  Tadashi Kamada ,  Yasuaki Makino ,  Yoshimi Yoshino ,  Seiichiro Otake

IPC: B60H1/00 ,  B60S1/08

CPC classification number: B60S1/0822 ,  B60H1/00785 ,  B60S1/0837 ,  G06K9/00791 ,  Y10S15/15

Abstract: An apparatus for optically detecting the attachment state of extraneous matters to a translucent shield member. The optically detecting apparatus comprises a light-emitting unit having a plurality of light-emitting elements each emitting a light ray toward the translucent shield member, a photoelectric transducer unit having a plurality of transducer elements each receiving each of the light rays reflected on the translucent shield member, and a data processing unit coupled to the transducer unit. The transducer unit generates detection signals corresponding to the quantities of the received light rays and the data processing unit successively compares the level of each of the detection signals with a predetermined level to produce binary signals in accordance with the results of the comparison so that a binary signal pattern is defined at the respective transducer elements. The data processing unit determines the attachment state of the extraneous matters to the translucent shield member by comparing the defined binary signal pattern with a reference pattern.

Abstract translation: 一种用于光学地检测外来物质到半透明屏蔽构件的附着状态的装置。 光学检测装置包括具有多个发光元件的发光单元，每个发光元件朝向半透明屏蔽构件发射光线;光电变换器单元，具有多个换能器元件，每个换能器元件接收在半透明屏蔽构件上反射的每个光线 屏蔽构件和耦合到换能器单元的数据处理单元。 换能器单元产生对应于接收光线的量的检测信号，并且数据处理单元根据比较结果将每个检测信号的电平与预定电平连续地进行比较，以产生二进制信号，使得二进制 在相应的换能器元件处限定信号图案。 数据处理单元通过将定义的二进制信号模式与参考模式进行比较来确定外部物质对半透明屏蔽构件的附着状态。

公开(公告)号：US10446714B2

公开(公告)日：2019-10-15

申请号：US14281535

申请日：2014-05-19

Applicant: Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/00 ,  H01L33/32 ,  H01L33/54 ,  H01L33/50 ,  H01L33/06

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

公开(公告)号：US08815701B2

公开(公告)日：2014-08-26

申请号：US13546040

申请日：2012-07-11

Applicant: Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

Inventor： Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

IPC: H01L21/762 ,  H01L27/12 ,  H01L27/06 ,  H01L21/8234 ,  H01L27/02 ,  H01L21/84 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L21/823481 ,  H01L21/26533 ,  H01L21/76243 ,  H01L21/76264 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Abstract translation: 半导体器件包括：SOI衬底，包括支撑层，第一绝缘膜和SOI层; 第一个电路; 第二电路; 和沟槽分离元件。 SOI衬底还包括第一区域和第二区域。 第一区域具有依次层叠的支撑层，第一绝缘膜和SOI层，第二区域仅具有支撑层。 沟槽分离元件穿透支撑层，第一绝缘膜和SOI层。 沟槽分离元件分离第一区域和第二区域。 第一电路设置在第一区域的SOI层中。 第二电路设置在第二区域的支撑层中。

公开(公告)号：US08624367B2

公开(公告)日：2014-01-07

申请号：US12588739

申请日：2009-10-27

Applicant: Masao Yamada ,  Tetsuo Fujii

Inventor： Masao Yamada ,  Tetsuo Fujii

IPC: H01L23/495

CPC classification number: H01L23/49575 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.

Abstract translation: 半导体器件包括引线框架，半导体芯片，基板，多个芯片部件，多个导线以及树脂部件。 引线框架包括芯片安装部分和多个引线部分。 半导体芯片安装在芯片安装部分上。 基板安装在芯片安装部分上。 芯片部件安装在基板上。 每个芯片部件在一个方向上具有第一端部部分和第二端部部分，并且每个芯片部分在第一端部具有第一电极，在第二端部具有第二电极。 每个电线将芯片部件之一的第二电极和引线部分中的一个耦合。 树脂构件覆盖引线框架，半导体芯片，基板，芯片部件和电线。

公开(公告)号：US08604565B2

公开(公告)日：2013-12-10

申请号：US13083732

申请日：2011-04-11

Applicant: Tetsuo Fujii ,  Minekazu Sakai ,  Takumi Shibata

Inventor： Tetsuo Fujii ,  Minekazu Sakai ,  Takumi Shibata

IPC: H01L29/82

CPC classification number: G01L9/0005

Abstract: A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.

Abstract translation: 物理量检测装置包括：绝缘层; 绝缘层上的半导体层; 以及半导体层中的第一和第二电极。 每个电极具有壁部分，其中一个包括两个隔膜和盖部分。 彼此相对的隔膜提供具有由盖部分覆盖的开口的中空圆柱体。 一个隔膜面对另一个壁部分或另一个壁部分的一个隔膜。 当物理量施加到隔膜时，一个隔膜和另一个壁部分中的另一个壁部分或一个隔膜之间的距离随空心圆柱体中的参考压力和外部压力之间的压力差而改变。 物理量由第一和第二电极之间的电容检测。