公开(公告)号：US20210090888A1

公开(公告)日：2021-03-25

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Jinwang LI ,  Masahiro OKA ,  Yoshimasa WATANABE ,  Yuuki YAMAMOTO ,  Hiroyuki IKUTA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/28

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

公开(公告)号：US20190244838A1

公开(公告)日：2019-08-08

申请号：US16263236

申请日：2019-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA ,  Yuuki YAMAMOTO

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/511

CPC classification number: H01L21/67063 ,  C23C16/0236 ,  C23C16/401 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02129 ,  H01L21/02274

Abstract: A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.

公开(公告)号：US20160351398A1

公开(公告)日：2016-12-01

申请号：US15165085

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Hidenori MIYOSHI ,  Masahiro OKA ,  Genji NAKAMURA ,  Yuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/324 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/16

Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.

Abstract translation: 公开了一种通过将掺杂剂注入到待处理的基板上来制造半导体元件的方法。 通过使用微波在处理容器内产生高频等离子体。 通过使用所生成的高频等离子体，对保持在处理容器内的保持台上的含锗被处理基板进行等离子体掺杂处理。

公开(公告)号：US20140302666A1

公开(公告)日：2014-10-09

申请号：US14244481

申请日：2014-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Peter VENTZEK ,  Takenao NEMOTO ,  Hirokazu UEDA ,  Yuuki KOBAYASHI ,  Masahiro HORIGOME

IPC: H01L21/223 ,  H01J37/32

CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449 ,  H01L29/66803

Abstract: A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.

Abstract translation: 一种用掺杂剂掺杂衬底表面的方法和装置，掺杂剂例如是膦或胂。 用主要由诸如氦或氩的惰性气体形成的等离子体进行掺杂，掺杂剂浓度低。 为了提供适形掺杂，优选地形成掺杂剂的单层，在掺杂过程期间切换气流引入位置，其中气体混合物主要通过处理室中的中心顶端口在第一时间段内引入，随后引入 的气体混合物主要通过外围或边缘注入端口持续第二时间段，其中切换以等离子体处理交替的方式继续。

公开(公告)号：US20240420970A1

公开(公告)日：2024-12-19

申请号：US18703525

申请日：2022-10-25

Applicant: Tokyo Electron Limited ,  Tokyo University of Science Foundation

Inventor： Takao OKABE ,  Hirokazu UEDA ,  Naoki UMESHITA ,  Mitsuaki IWASHITA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Tamotsu MORIMOTO ,  Toshikazu AKIMOTO

IPC: H01L21/67

Abstract: A liquid circulation system according to an aspect of the present disclosure is for recovering an ionic liquid supplied into a vacuum chamber and returning the recovered ionic liquid back again into the vacuum chamber, and includes a storage tank having an opening communicating with an inside of the vacuum chamber and configured to store the ionic liquid recovered from the inside of the vacuum chamber through the opening, a viscosity pump provided below the storage tank in a vertical direction, and a pipe configured to supply the ionic liquid inside the storage tank into the vacuum chamber.

公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20230226571A1

公开(公告)日：2023-07-20

申请号：US18096537

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeo NAKANO ,  Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Ryuichi ASAKO ,  Kenichi UKI

IPC: B05D7/24 ,  B05D1/02

CPC classification number: B05D7/24 ,  B05D1/025 ,  B05D2506/10

Abstract: A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

公开(公告)号：US20230135523A1

公开(公告)日：2023-05-04

申请号：US17907699

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hiroyuki NAGAI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA

IPC: F25B21/02 ,  H10N15/10 ,  F25B49/00

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

公开(公告)号：US20230094546A1

公开(公告)日：2023-03-30

申请号：US17954105

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Naoki UMESHITA ,  Toshikazu AKIMOTO ,  Hiroki MAEHARA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.

公开(公告)号：US20230062105A1

公开(公告)日：2023-03-02

申请号：US17820962

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA ,  Hirokazu UEDA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/34 ,  H01J37/32

Abstract: A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.