Electron gun and radiation generating apparatus

    公开(公告)号:US10074503B2

    公开(公告)日:2018-09-11

    申请号:US15037971

    申请日:2014-09-16

    Inventor: Oliver Heid

    CPC classification number: H01J3/027 H01J3/02 H01J3/18 H01J35/06 H01J35/14

    Abstract: The invention relates to an electron gun for generating a flat electron beam, comprising a cathode with an emission surface which is curved about a central axis and which is designed to emit electrons. The electron gun further comprises an accelerating device for accelerating the electrons in a radial direction towards a target region on the central axis. Furthermore, the emission surface has a width in the azimuth direction and a height oriented perpendicularly to the width, said width being at least ten times greater than the height.

    Ion implantation apparatus
    23.
    发明授权
    Ion implantation apparatus 有权
    离子注入装置

    公开(公告)号:US09208991B1

    公开(公告)日:2015-12-08

    申请号:US14721752

    申请日:2015-05-26

    CPC classification number: H01J37/1477 H01J37/08 H01J37/3171 H01J2237/30483

    Abstract: An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.

    Abstract translation: 离子注入装置包括:扫描单元,沿垂直于参考轨迹的水平方向扫描离子束;以及下游电极装置,设置在扫描电极装置的下游。 扫描电极装置包括一对沿水平方向彼此相对设置的扫描电极,其间插入有基准轨迹。 下游电极装置包括:电极体,其构成为:相对于垂直于基准轨迹和水平方向的垂直方向的开口宽度和/或沿着基准轨迹的方向的开口厚度,开口宽度和 配置基准轨迹的中央部的开口厚度与扫描电极的下游端的位置附近的开口宽度和/或开口厚度不同。

    Charged particle lithography system with a long shape illumination beam
    24.
    发明授权
    Charged particle lithography system with a long shape illumination beam 有权
    具有长形照明光束的带电粒子光刻系统

    公开(公告)号:US09202662B2

    公开(公告)日:2015-12-01

    申请号:US13756178

    申请日:2013-01-31

    Abstract: A system includes an integrated circuit (IC) design data base having a feature, a source configured to generate a radiation beam, a pattern generator (PG) including a mirror array plate and an electrode plate disposed over the mirror array plate, wherein the electrode plate includes a lens let having a first dimension and a second dimension perpendicular to the first dimension with the first dimension larger than the second dimension so that the lens let modifies the radiation beam to form the long shaped radiation beam, and a stage configured secured the substrate. The system further includes an electric field generator connecting the mirror array plate. The mirror array plate includes a mirror. The mirror absorbs or reflects the radiation beam. The radiation beam includes electron beam or ion beam. The second dimension is equal to a minimum dimension of the feature.

    Abstract translation: 一种系统包括具有特征的集成电路(IC)设计数据库,被配置为产生辐射束的源,包括反射镜阵列板的图案发生器(PG)和设置在所述反射镜阵列板上的电极板,其中所述电极 板包括透镜,其具有垂直于第一尺寸的第一尺寸和第二尺寸,其第一尺寸大于第二尺寸,使得透镜使得辐射束修改以形成长形辐射束,并且被配置为将 基质。 该系统还包括连接镜阵列板的电场发生器。 镜阵列板包括镜子。 镜子吸收或反射辐射束。 辐射束包括电子束或离子束。 第二个维度等于该特征的最小尺寸。

    OCTOPOLE DEVICE AND METHOD FOR SPOT SIZE IMPROVEMENT
    26.
    发明申请
    OCTOPOLE DEVICE AND METHOD FOR SPOT SIZE IMPROVEMENT 有权
    十进制装置及其尺寸改进方法

    公开(公告)号:US20140103201A1

    公开(公告)日:2014-04-17

    申请号:US13663692

    申请日:2012-10-30

    Abstract: A method of compensating mechanical, magnetic and/or electrostatic inaccuracies in a scanning charged particle beam device is described. The method includes an alignment procedure, wherein the following steps are conducted: compensating 4-fold astigmatism with an element having at least 8-pole compensation capability, wherein the aligning and compensating steps of the alignment procedure act on a charged particle beam with beam dimensions in two orthogonal directions each of at least 50 μm and coaxially aligned with at least the element having at least the 8-pole compensation capability.

    Abstract translation: 描述了在扫描带电粒子束装置中补偿机械,磁性和/或静电不准确性的方法。 该方法包括对准过程,其中进行以下步骤:用具有至少8极补偿能力的元件补偿4折像散,其中对准过程的对准和补偿步骤作用于具有束尺寸的带电粒子束 在至少50μm的两个正交方向上,并且至少与具有至少8极补偿能力的元件同轴对准。

    ELECTROSTATIC LENS UNIT
    27.
    发明申请
    ELECTROSTATIC LENS UNIT 审中-公开
    静电镜头单元

    公开(公告)号:US20140077096A1

    公开(公告)日:2014-03-20

    申请号:US14023308

    申请日:2013-09-10

    Abstract: An electrostatic lens unit of the present disclosure includes an electrostatic lens fixed to a fixing member. The electrostatic lens has a plurality of electrodes arranged apart from each other by a spacing member and each having a through hole through which a charged beam passes. The electrostatic lens is fixed to the fixing member at a position, on a side where the charged beam goes out, shifted from a center of a thickness of the electrostatic lens in a direction of an optical axis.Part of a surface of the electrostatic lens on the side where the charged beam enters is connected to the fixing member via a supporting member.

    Abstract translation: 本公开的静电透镜单元包括固定到固定构件的静电透镜。 静电透镜具有通过间隔构件彼此分开布置的多个电极,每个电极具有带电束通过的通孔。 静电透镜在被充电光束出射的一侧的位置处,在静电透镜的厚度中心沿光轴的方向固定在固定部件上。 静电透镜在充电束进入侧的表面的一部分经由支撑构件连接到固定构件。

    ELECTROSTATIC LENS ARRAY
    28.
    发明申请
    ELECTROSTATIC LENS ARRAY 失效
    静电镜片阵列

    公开(公告)号:US20130341526A1

    公开(公告)日:2013-12-26

    申请号:US13915834

    申请日:2013-06-12

    Inventor: Yasuo Ohashi

    Abstract: Provided is an electrostatic lens array, including multiple substrates arranged with intervals, each of the multiple substrates having an aperture for passing a charged particle beam, in which: in a travelling direction of the charged particle beam, a peripheral contour line formed by any one of surfaces of the multiple substrates other than an upper surface of a most upstream substrate and a lower surface of a most downstream substrate has a protruding portion protruding from a peripheral contour line of one of the upper surface of the most upstream substrate and the lower surface of the most downstream substrate; and a position of the protruding portion is defined by a position regulating member, whereby parallelism is adjustable so that a surface including the protruding portion is parallel to a surface to be irradiated with the charged particle beam after passing through the aperture.

    Abstract translation: 本发明提供一种静电透镜阵列,其包括间隔布置的多个基板,所述多个基板中的每一个具有用于使带电粒子束通过的孔,其中:在带电粒子束的行进方向上,由任何一个形成的周边轮廓线 多个基板的除了最上游基板的上表面和最下游基板的下表面以外的多个基板的表面具有从最上游基板的上表面和下游表面的上表面的周边轮廓线突出的突出部 的最下游底物; 并且突出部的位置由位置限制构件限定,由此平行度是可调节的,使得包括突出部分的表面平行于穿过孔之后被带电粒子束照射的表面。

    Apparatus and method for multi-directionally scanning a beam of charged particles
    29.
    发明授权
    Apparatus and method for multi-directionally scanning a beam of charged particles 有权
    用于多方向扫描带电粒子束的装置和方法

    公开(公告)号:US08481959B2

    公开(公告)日:2013-07-09

    申请号:US13028188

    申请日:2011-02-15

    Applicant: John Ruffell

    Inventor: John Ruffell

    Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

    Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件,其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片,并且旋转机构操作以将离子束引导到至少一个晶片保持器中的一个,其也旋转以保持恒定的注入角度。

    Achromatic beam deflector, achromatic beam separator, charged particle device, method of operating an achromatic beam deflector, and method of operating an achromatic beam separator
    30.
    发明授权
    Achromatic beam deflector, achromatic beam separator, charged particle device, method of operating an achromatic beam deflector, and method of operating an achromatic beam separator 有权
    消色差光束偏转器,消色差光束分离器,带电粒子装置,操作消色差光束偏转器的方法以及操作无色光束分离器的方法

    公开(公告)号:US08373136B2

    公开(公告)日:2013-02-12

    申请号:US12579869

    申请日:2009-10-15

    CPC classification number: H01J37/1472 H01J2237/1508 H01J2237/153

    Abstract: An achromatic beam separator device for separating a primary charged particle beam from another charged particle beam and providing the primary charged particle beam on an optical axis (142) is provided, including a primary charged particle beam inlet (134), a primary charged particle beam outlet (132) encompassing the optical axis, a magnetic deflection element (163) adapted to generate a magnetic field, and an electrostatic deflection element (165) adapted to generate an electric field overlapping the magnetic field, wherein at least one element chosen from the electrostatic deflection element and the magnetic deflection element is positioned and/or positionable to compensate an octopole influence.

    Abstract translation: 提供了一种消色差束分离器装置,用于将初级带电粒子束与另一带电粒子束分离并在光轴(142)上提供初级带电粒子束,包括初级带电粒子束入口(134),初级带电粒子束 包括光轴的出口(132),适于产生磁场的磁偏转元件(163)和适于产生与磁场重叠的电场的静电偏转元件(165),其中,从 静电偏转元件和磁偏转元件被定位和/或定位以补偿八极杆的影响。

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