公开(公告)号：US20180033651A1

公开(公告)日：2018-02-01

申请号：US15661480

申请日：2017-07-27

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Kunihiro MIYAZAKI

IPC: H01L21/67 ,  F16K37/00 ,  H01L21/687

CPC classification number: H01L21/6708 ,  F16K37/005 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/68764

Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (11a), which adjusts the concentration of the processing liquid, a first processing liquid path P1, through which the processing liquid flows to the processing liquid adjuster (11a), a second processing liquid path P2, through which the processing liquid flows to the processing liquid adjuster 11a, a first concentration meter 201a, which measures the concentration of the processing liquid flowing through the first processing liquid path P1, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (11a), a second concentration meter 201b, which measures the concentration of the processing liquid flowing through the second processing liquid path P2, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meter 201a in terms of concentration, a first valve mechanism 120a/130a, which opens and closes the first processing liquid path P1, and a second valve mechanism 120b/130b, which opens and closes the second processing liquid path P2.

公开(公告)号：US20180016673A1

公开(公告)日：2018-01-18

申请号：US15715966

申请日：2017-09-26

Applicant: SHIBAURA MECHATRONICS CORPORATION ,  TOSHIBA MEMORY CORPORATION

Inventor： Satoshi NAKAMURA ,  Kensuke DEMURA ,  Daisuke MATSUSHIMA ,  Masayuki HATANO ,  Hiroyuki KASHIWAGI ,  Chen KANG ,  Ganachev Ivan PETROV

IPC: C23C14/04 ,  B29C33/38 ,  G03F7/00 ,  B29C59/02

CPC classification number: C23C14/042 ,  B29C33/3842 ,  B29C59/022 ,  C23C14/246 ,  G03F7/0002

Abstract: According to one embodiment, an imprint template manufacturing apparatus includes a support unit, a vaporization unit, and an adhesion preventing plate. The support unit supports a template that includes a base having a main surface, and a convex portion provided on the main surface and having an end surface. A concavo-convex pattern to be pressed against a liquid material to be transferred is formed on the end surface. The support unit supports the template with the convex portion facing downward. The vaporization unit is located below the template on the support unit and configured to vaporize a liquid-repellent material. The adhesion preventing plate is located below the template on the support unit and configured to allow the liquid-repellent material vaporized to adhere to the side surface of the convex portion of the template and to prevent it from adhering to the concavo-convex pattern.

公开(公告)号：US20170369987A1

公开(公告)日：2017-12-28

申请号：US15636414

申请日：2017-06-28

Applicant: Shibaura Mechatronics Corporation

Inventor： Akihiko Ito

IPC: C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  H01L23/552 ,  C23C14/50

CPC classification number: C23C14/3464 ,  C23C14/205 ,  C23C14/352 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/3429 ,  H01L23/552 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/3025

Abstract: A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

公开(公告)号：US09811096B2

公开(公告)日：2017-11-07

申请号：US14939008

申请日：2015-11-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Takashi Ootagaki ,  Emi Matsui

IPC: G05D11/13 ,  B05B12/00 ,  G05D9/12 ,  B05C5/02 ,  H01L21/67 ,  B05B13/02

CPC classification number: G05D11/13 ,  B05B12/006 ,  B05B13/0242 ,  B05C5/02 ,  G05D9/12 ,  H01L21/67017 ,  H01L21/6708

Abstract: A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.

公开(公告)号：US09612205B2

公开(公告)日：2017-04-04

申请号：US14463947

申请日：2014-08-20

Applicant: Shibaura Mechatronics Corporation

Inventor： Ganachev IvanPetrov ,  Munenori Iwami

IPC: G01B11/06 ,  G01N21/84 ,  H01L21/66 ,  H01J37/32 ,  C09K13/00 ,  H01L21/67

CPC classification number: G01N21/84 ,  C09K13/00 ,  G01B2210/56 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26 ,  H01L22/30

Abstract: According to one embodiment, an etching amount measurement pattern is provided in a surface of a substrate. The pattern comprises a plurality of components two-dimensionally disposed and causing light incident on the pattern to be diffracted,A configuration of the component has 4-fold rotational symmetry.The plurality of components is arranged in a disposition having 4-fold rotational symmetry.

公开(公告)号：US09607865B2

公开(公告)日：2017-03-28

申请号：US14212218

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6776

Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.

公开(公告)号：US20170053779A1

公开(公告)日：2017-02-23

申请号：US15239871

申请日：2016-08-18

Applicant: Shibaura Mechatronics Corporation

Inventor： Kazuki Nakazawa ,  Hiroki Shirahama ,  Yoshie Okamoto

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32009 ,  C23C16/507 ,  C23C16/54 ,  H01J37/3178 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/184 ,  H01L21/67201 ,  H01L2221/67

Abstract: According to one embodiment, a substrate processing apparatus includes a processor, a transferring part, a load lock unit, and a transfer unit. The processor performs processing of a substrate in an atmosphere. The transferring part transfers the substrate in an environment having a pressure higher than the pressure when performing the processing. The load lock unit is provided between the processor and the transferring part. The transfer unit is provided between the load lock unit and the processor. The load lock unit includes a supporter, and a drive unit. The supporter supports the substrate. The drive unit moves a position in a rotation direction of the supporter. The transfer unit transfers the substrate from the processor to the supporter partway through the processing of the substrate in the processor. The drive unit moves a position in a rotation direction of the transferred substrate.

Abstract translation: 根据一个实施例，基板处理装置包括处理器，转印部分，装载锁定单元和转印单元。 处理器在大气中进行基板的处理。 转印部件在进行处理时，在压力高于压力的环境下转印基板。 负载锁定单元设置在处理器和转印部件之间。 传送单元设置在加载锁定单元和处理器之间。 负载锁定单元包括支撑件和驱动单元。 支架支撑基板。 驱动单元沿着支撑件的旋转方向移动位置。 转移单元通过处理器中的衬底的处理将衬底从处理器转移到支撑件。 驱动单元沿所转印的基板的旋转方向移动位置。

公开(公告)号：US20160062372A1

公开(公告)日：2016-03-03

申请号：US14939008

申请日：2015-11-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Emi MATSUI

IPC: G05D11/13 ,  G05D9/12 ,  B05B12/00

CPC classification number: G05D11/13 ,  B05B12/006 ,  B05B13/0242 ,  B05C5/02 ,  G05D9/12 ,  H01L21/67017 ,  H01L21/6708

Abstract: A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.

Abstract translation: 将处理液供给到处理装置并回收用于再供给的处理液的液体供给装置包括具有排气通路和溢流管线的供给槽，并且能够切换为进给模式，其中处理 进料液体和备用模式，其中进料罐在容纳处理液体的同时待机; 供给机构，其在所述多个供给槽中以所述供给方式从所述供给槽将所述处理液供给到所述处理装置; 回收机构，其将处理装置中的处理液回收并返回给供给罐; 并且设置在多个供给槽中的每一个中以阻断排气通道和溢流管线的开关机构。

公开(公告)号：US20150093906A1

公开(公告)日：2015-04-02

申请号：US14490939

申请日：2014-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo KOBAYASHI ,  Koichi HAMADA ,  Yoshiaki KUROKAWA ,  Masaaki FURUYA ,  Hideki MORI ,  Yasushi WATANABE ,  Yoshinori HAYASHI

IPC: H01L21/311 ,  B05C3/02 ,  B05C11/11 ,  B05C5/02 ,  B05C11/08 ,  B05C11/10

CPC classification number: H01L21/31111 ,  H01L21/67017 ,  H01L21/6708

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid, etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the phosphoric acid which was obtained by the phosphoric acid regenerating unit to the liquid etchant to be used at the etching treatment unit.

Abstract translation: 一种能够更有效地再生磷酸的基板处理装置，其可以在不使用大的设备的情况下尽可能多地进行蚀刻处理而返回到蚀刻处理，也就是基板处理装置，其处理硅基板W， 氮化物膜由含有磷酸的液体蚀刻剂形成，该液体蚀刻剂包括蚀刻处理单元（旋转处理单元30），该蚀刻处理单元（旋转处理单元30）向每个衬底提供适当量的液体，蚀刻剂，每个衬底一次一个地蚀刻， 基板并去除氮化物膜，将磷酸再生单元（旋转处理单元30）在预定温度环境下将用于处理一个基板的液体蚀刻剂和适量的液体氢氟酸混合使用液体蚀刻剂的量 再生磷酸，磷酸回收装置（泵38，磷酸回收槽50，pu mp 52），其将由磷酸再生单元获得的磷酸返回到在蚀刻处理单元处使用的液体蚀刻剂。

公开(公告)号：US20130260292A1

公开(公告)日：2013-10-03

申请号：US13850515

申请日：2013-03-26

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F1/24

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.