Abstract:
A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one through-silicon-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.
Abstract:
A cyclone dust collecting apparatus for a vacuum cleaner includes a first chamber; an entering passage disposed above the first chamber, the entering passage guiding outer air to form a downwardly whirling air current in the first chamber; a second chamber formed at a position higher than that of an outlet of the entering passage above the first chamber, the second chamber in which the outer air entering from the first chamber whirls; a contaminants-blocking member disposed to be spaced apart from a bottom surface of the first chamber at a center of the first chamber, the contaminants-blocking member preventing contaminants and water separated in the first chamber from moving into the second chamber; and a grill disposed inside the second chamber to be in fluid communication with an air discharging port through which clean air is discharged.
Abstract:
A terminal discriminating apparatus and a terminal discriminating method using the same are provided. The terminal discriminating apparatus includes: a measurement unit for measuring a pull-up voltage and a pull-down voltage of each of candidate terminals to be discriminated; a discriminating unit for comparing the pull-up voltages, pull-down voltages, and the differences between the pull-up voltages and pull-down voltages for the candidate terminals to discriminate the types of the candidate terminals; and an output unit for outputting results of the discrimination of the candidate terminals transferred from the discriminating unit. The types of the candidate terminals can be discriminated by comparing the pull-up voltage, the pull-down voltage, and the differences between the pull-up voltages and the pull-down voltages for the candidate terminals.
Abstract:
A semiconductor package includes a first package substrate, a first semiconductor chip disposed on the first package substrate, the semiconductor chip including first through hole vias, and a chip package disposed on the first semiconductor chip, the chip package including a second package substrate and a second semiconductor chip disposed on the second package substrate, wherein a first conductive terminal is disposed on a first surface of the semiconductor chip and a second conductive terminal is disposed on a first surface of the second package substrate, the first conductive terminal disposed on the second conductive terminal.
Abstract:
A wet-type dust collector for a vacuum cleaner. The disclosed wet-type dust collector includes a first separating portion, the inside of which is filled with water for separating dust from air that is suctioned in from the outside; an exhaust pipe unit having an exhaust outlet and installed inside the first separating portion; and a passage-closing unit installed inside the exhaust pipe unit, wherein the passage-closing unit closes the exhaust outlet of the exhaust pipe unit by means of the combined forces of the suctioning force through the exhaust pipe unit and the buoyant force of the water, in order to prevent the water from leaking out from the first separating portion.
Abstract:
A flip chip package may include a substrate, a semiconductor chip, main bump structures and auxiliary bump structures. The substrate has a circuit pattern. The semiconductor chip is arranged over the substrate. The semiconductor chip includes a body having semiconductor structures, main pads electrically connected to the semiconductor structures to mainly control the semiconductor structures, and auxiliary pads electrically connected to the semiconductor structures to provide auxiliary control of the semiconductor structures. The main bump structures are interposed between the semiconductor chip and the substrate to electrically connect the circuit pattern with the main pads. The auxiliary bump structures can be interposed between the semiconductor chip and the substrate to electrically connect the circuit pattern with the auxiliary pads.
Abstract:
A flip-chip assembly comprises a semiconductor chip, a substrate, a first buffer layer, a second buffer layer and a conductive bump. The semiconductor chip includes a first region and a second region adjacent to the first region. The substrate is disposed under the semiconductor chip. The first buffer layer is disposed between the first region of the semiconductor chip and the substrate. The second buffer layer is disposed between the second region of the semiconductor chip and the substrate. The conductive bump is formed through the second buffer layer and electrically connects the semiconductor chip to the substrate.
Abstract:
A resistance memory element, a phase change memory element, a resistance random access memory device, an information reading method thereof, a phase change random access memory device, and an information reading method thereof are provided. The resistance random access memory device includes an array of resistance memory element arranged in a matrix. Each resistance memory element includes a substrate in which a source region and a drain region are formed along the column direction and a channel region is formed between the source region and the drain region, a bit line formed on the channel region out of a conductive material to have a shape extending along the arrangement direction of the columns, a resistance switching layer formed on the bit line out of a material of which electrical resistance is switched by an electrical signal, and a word line formed on the resistance switching layer out of a conductive material to have a shape extending along the row direction.
Abstract:
Provided is an apparatus and method for virtual private network (VPN) communication in a socket level that can be applied in an Internet Protocol version 4 (IPv4)/IPv6 complex network, and can process data in a socket level to make a VPN communication apparatus available in many applications requiring more security, as well as a web application. The apparatus includes: a VPN database for storing connection information of an internal device and an external device and security-related information associated with the connection information; a packet analyzing module for analyzing a packet received from the internal device or the external device, obtaining connection information of the device, and storing the obtained connection information in the VPN database; a key exchange engine for performing a key sharing process with the device, generating the security-related information associated with the connection information, and storing the generated security-related information in the VPN database; and a socket data processing engine for encoding or decoding data in the socket level based on the security-related information stored in the VPN database, wherein the data is transmitted to and received from the internal device or the external device.
Abstract:
A flip chip package may include a substrate, a semiconductor chip, main bump structures and auxiliary bump structures. The substrate has a circuit pattern. The semiconductor chip is arranged over the substrate. The semiconductor chip includes a body having semiconductor structures, main pads electrically connected to the semiconductor structures to mainly control the semiconductor structures, and auxiliary pads electrically connected to the semiconductor structures to provide auxiliary control of the semiconductor structures. The main bump structures are interposed between the semiconductor chip and the substrate to electrically connect the circuit pattern with the main pads. The auxiliary bump structures can be interposed between the semiconductor chip and the substrate to electrically connect the circuit pattern with the auxiliary pads.