公开(公告)号：US11322662B2

公开(公告)日：2022-05-03

申请号：US16398889

申请日：2019-04-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Brandl ,  Alexander Baumgartner ,  Ion Stoll

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/54

Abstract: The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

公开(公告)号：US10446723B2

公开(公告)日：2019-10-15

申请号：US15532486

申请日：2015-12-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Butendeich ,  Ion Stoll ,  Martin Mandl ,  Martin Strassburg

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/18

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

公开(公告)号：US10297727B2

公开(公告)日：2019-05-21

申请号：US14441154

申请日：2013-11-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion Stoll ,  Britta Göötz

IPC: G02B1/10 ,  C09K11/02 ,  C09K11/08 ,  C09K11/56 ,  C09K11/88 ,  H01L33/50 ,  H01L33/56

Abstract: A converter material includes a porous inorganic matrix material having a multiplicity of pores. A multiplicity of inorganic nanoparticles are applied on the surface of the matrix material. The nanoparticles are suitable for converting electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range. A method for producing such a converter material and an optoelectronic component that includes such a converter material are furthermore specified.

公开(公告)号：US10243117B2

公开(公告)日：2019-03-26

申请号：US15573820

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Ion Stoll ,  Georg Roßbach

IPC: H01L33/50 ,  C25D13/02 ,  C25D13/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L33/48

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

公开(公告)号：US20180261734A1

公开(公告)日：2018-09-13

申请号：US15573820

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Ion Stoll ,  Georg Roßbach

IPC: H01L33/50 ,  H01L33/62 ,  H01L33/00 ,  H01L33/54 ,  H01L33/58 ,  H01L33/56 ,  H01L33/32 ,  C25D13/12 ,  C25D13/02

CPC classification number: H01L33/505 ,  C25D13/02 ,  C25D13/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/96 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

公开(公告)号：US09985011B2

公开(公告)日：2018-05-29

申请号：US14912382

申请日：2014-08-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Ion Stoll ,  Norwin von Malm

IPC: H01L21/00 ,  H01L25/16 ,  C25D13/02 ,  C25D13/22 ,  H01L27/15 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L25/167 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L27/156 ,  H01L33/42 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

公开(公告)号：US09947843B2

公开(公告)日：2018-04-17

申请号：US14908252

申请日：2014-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Burger ,  Tobias Gebuhr ,  Ion Stoll

IPC: H01L33/00 ,  H01L33/56 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48

CPC classification number: H01L33/56 ,  H01L33/486 ,  H01L33/502 ,  H01L33/505 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A method of producing a cover element for an optoelectronic component includes producing a frame having a multiplicity of openings, wherein the frame is made of a material having embedded particles of TiO2, ZrO2, Al2O3, AlN, SiO2, or another optically reflective material and/or an embedded colored pigment; introducing a material into a multiplicity of the openings; and dividing the frame.

公开(公告)号：US09876001B2

公开(公告)日：2018-01-23

申请号：US15462710

申请日：2017-03-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Ion Stoll ,  Norwin von Malm

IPC: H01L21/00 ,  H01L25/16 ,  H01L33/50 ,  C25D13/12 ,  C25D13/02 ,  C25D13/22 ,  H01L27/15

CPC classification number: H01L25/167 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L27/156 ,  H01L33/42 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

公开(公告)号：US09825208B2

公开(公告)日：2017-11-21

申请号：US15506059

申请日：2015-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Ion Stoll

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/00 ,  C25D13/02 ,  C25D13/12

CPC classification number: H01L33/504 ,  C25D13/02 ,  C25D13/12 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/005 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method of producing an optoelectronic semiconductor component includes providing a semiconductor body; applying a photoconductive layer on a radiation exit surface of the semiconductor body, wherein the semiconductor body emits electromagnetic radiation during operation; exposing at least one sub-region of the photoconductive layer with electromagnetic radiation generated by the semiconductor body; and depositing a conversion layer on the sub-region of the photoconductive layer by an electrophoresis process.

公开(公告)号：US20170278829A1

公开(公告)日：2017-09-28

申请号：US15508511

申请日：2015-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion Stoll ,  David Racz ,  Markus Schneider

IPC: H01L25/075 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L2924/0002 ,  H04M1/21 ,  H05B33/0872 ,  H05B37/0218 ,  H01L2924/00

Abstract: Optoelectronic semiconductor component includes at least four different light sources each including at least one optoelectronic semiconductor chip, which during operation emit radiation having mutually different colour loci in the CIE standard chromaticity diagram, wherein the semiconductor component is designed to emit white or coloured light having a variable correlated colour temperature during operation.