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52 条记录 (耗时 0.032 秒)

    Method of making an interposer with contact structures
    31.
    发明申请
    Method of making an interposer with contact structures 审中-公开
    制造具有接触结构的插入件的方法

    公开(公告)号：US20070017093A1

    公开(公告)日：2007-01-25

    申请号：US11528137

    申请日：2006-09-27

    申请人： James Wark ,  Salman Akram

    发明人： James Wark ,  Salman Akram

    IPC分类号： H01R43/00

    CPC分类号： H01R12/57 ,  G01R1/0408 ,  G01R1/0466 ,  H01L2924/0002 ,  H01R43/205 ,  H05K1/119 ,  H05K3/325 ,  H05K3/326 ,  H05K3/4007 ,  H05K2201/0133 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/09045 ,  H05K2201/09472 ,  H05K2201/10689 ,  Y10T29/49117 ,  Y10T29/49123 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/49174 ,  Y10T29/49179 ,  Y10T29/49222 ,  Y10T29/49453 ,  H01L2924/00

    摘要： A method of making an interposer having an array of contact structures for making temporary electrical contact with the leads of a chip package. The contact structures may make contact with the leads as close as desired to the body of the chip package. Moreover, the contact structures can be adapted for making contact with leads having a very fine pitch. In one embodiment, the contact structures include raised members formed over a body of the interposer. A conductive layer is formed over each of the raised members to provide a contact surface for engaging the leads of the chip package. In another embodiment, the raised members are replaced with depressions formed into the interposer. A conductive layer is formed on an inside surface of each depression to provide a contact surface for engaging the leads of the chip package. Any combination of raised members and depressions may be used.

    摘要翻译： 一种制造具有用于与芯片封装的引线暂时电接触的接触结构阵列的插入件的方法。 接触结构可以使引线接近芯片封装体的所需位置。 此外，接触结构可以适于与具有非常细的间距的引线接触。 在一个实施例中，接触结构包括形成在插入件的主体上的凸起部件。 在每个凸起构件上形成导电层，以提供用于接合芯片封装引线的接触表面。 在另一个实施例中，凸起构件被形成在插入件中的凹陷所代替。 在每个凹陷的内表面上形成导电层，以提供用于接合芯片封装的引线的接触表面。 可以使用凸起构件和凹陷的任何组合。

    Selective nickel plating of aluminum, copper, and tungsten structures
    33.
    发明申请
    Selective nickel plating of aluminum, copper, and tungsten structures 有权
    铝，铜和钨结构的选择性镀镍

    公开(公告)号：US20060046088A1

    公开(公告)日：2006-03-02

    申请号：US10934635

    申请日：2004-09-02

    申请人： Salman Akram ,  James Wark ,  William Hiatt

    发明人： Salman Akram ,  James Wark ,  William Hiatt

    IPC分类号： H01L29/12

    CPC分类号： H01L21/76879 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76898 ,  H01L2924/00013 ,  Y10T428/12528 ,  Y10T428/24917 ,  H01L2224/29099

    摘要： A method of selectively plating nickel on an intermediate semiconductor device structure. The method comprises providing an intermediate semiconductor device structure having at least one aluminum or copper structure and at least one tungsten structure. One of the aluminum or copper structure and the tungsten structure is nickel plated while the other remains unplated. The aluminum or copper structure or the tungsten structure may first be activated toward nickel plating. The activated aluminum or copper structure or the activated tungsten structure may then be nickel plated by immersing the intermediate semiconductor device structure in an electroless nickel plating solution. The unplated aluminum or copper structure or the unplated tungsten structure may subsequently be nickel plated by activating the unplated structure and nickel plating the activated structure. A method of simultaneously plating the aluminum or copper structure and the tungsten structure with nickel is also disclosed, as is an intermediate semiconductor device structure.

    摘要翻译： 在中间半导体器件结构上选择性镀镍的方法。 该方法包括提供具有至少一个铝或铜结构和至少一个钨结构的中间半导体器件结构。 铝或铜结构之一和钨结构是镀镍的，而另一个保持未镀层。 可以首先将铝或铜结构或钨结构活化成镀镍。 然后可以通过将中间半导体器件结构浸入无电镀镍溶液中来将活化的铝或铜结构或活化的钨结构镀镍。 然后通过激活未镀层的结构和镀镍活化的结构，可以将未镀覆的铝或铜结构或未镀覆的钨结构镀镍。 还公开了一种用镍同时电镀铝或铜结构和钨结构的方法，以及中间半导体器件结构。