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    METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE
    35.
    发明申请
    METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE 有权
    用于使用注射门的GAN垂直JFET的方法和系统

    公开(公告)号：US20130032811A1

    公开(公告)日：2013-02-07

    申请号：US13198655

    申请日：2011-08-04

    申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    IPC分类号： H01L29/808 ,  H01L29/20 ,  H01L21/337

    CPC分类号： H01L29/8083 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。

    Method and system for a GaN vertical JFET utilizing a regrown channel
    40.
    发明授权
    Method and system for a GaN vertical JFET utilizing a regrown channel 有权
    利用再生长通道的GaN垂直JFET的方法和系统

    公开(公告)号：US08969912B2

    公开(公告)日：2015-03-03

    申请号：US13198659

    申请日：2011-08-04

    申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    IPC分类号： H01L29/74 ,  H01L31/0328 ,  H01L29/80 ,  H01L29/76 ,  H01L21/8238 ,  H01L21/336 ,  H01L29/66 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/808 ,  H01L29/10 ,  H01L29/20

    CPC分类号： H01L29/66909 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66924 ,  H01L29/8083

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, a gate region at least partially surrounding the channel region, having a first surface coupled to the drift region and a second surface on a side of the gate region opposing the first surface, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction, and the channel region extends along at least a portion of the second surface of the gate region.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点，以及包括耦合到漏极的第二III族氮化物材料的漂移区域。 场效应晶体管还包括沟道区，该沟道区包括耦合到漏极并沿着垂直方向邻近漏极设置的第三III族氮化物材料，至少部分围绕沟道区的栅极区，具有耦合到漂移的第一表面 区域和与栅极区域相对的栅极区域的一侧上的第二表面，以及电连接到栅极区域的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得在垂直III族氮化物场效应晶体管的操作期间的电流沿着垂直方向，并且沟道区域沿着第二表面的至少一部分延伸 的门区域。